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Results: 1-7 |
Results: 7

Authors: Lee, YS Byeon, DS Han, MK Choi, YI
Citation: Ys. Lee et al., A new lateral dual-gate thyristor with current saturation, JPN J A P 1, 39(4B), 2000, pp. 1979-1981

Authors: Byeon, DS Lee, BH Han, MK Choi, YI
Citation: Ds. Byeon et al., The maximum controllable current of emitter switched thyristors employing the segmented P-base, PHYS SCR, T79, 1999, pp. 294-296

Authors: Kim, DY Byeon, DS Han, MK Choi, YI
Citation: Dy. Kim et al., A lateral trench-MOS bipolar-mode FET an silicon-on-insulator, PHYS SCR, T79, 1999, pp. 307-310

Authors: Chun, JH Lee, BH Byeon, DS Kim, DY Han, MK Choi, YI
Citation: Jh. Chun et al., An insulated gate bipolar transistor employing the plugged n(+) anode, MICROEL REL, 39(1), 1999, pp. 29-33

Authors: Byeon, DS Chun, JH Lee, BH Kim, DY Han, MK Choi, YI
Citation: Ds. Byeon et al., The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime, MICROELEC J, 30(6), 1999, pp. 571-575

Authors: Oh, JK Kim, DY Lee, BH Byeon, DS Han, MK Choi, YI
Citation: Jk. Oh et al., A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics, MICROELEC J, 30(6), 1999, pp. 577-581

Authors: Lee, YS Lee, BH Byeon, DS Oh, JK Han, MK Kim, SD Choi, YI
Citation: Ys. Lee et al., The temperature characteristics of the LDMOS, LIGBT, SINFET and IBT, J KOR PHYS, 33, 1998, pp. S187-S191
Risultati: 1-7 |