Citation: Ds. Byeon et al., The maximum controllable current of emitter switched thyristors employing the segmented P-base, PHYS SCR, T79, 1999, pp. 294-296
Authors:
Byeon, DS
Chun, JH
Lee, BH
Kim, DY
Han, MK
Choi, YI
Citation: Ds. Byeon et al., The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime, MICROELEC J, 30(6), 1999, pp. 571-575
Authors:
Oh, JK
Kim, DY
Lee, BH
Byeon, DS
Han, MK
Choi, YI
Citation: Jk. Oh et al., A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics, MICROELEC J, 30(6), 1999, pp. 577-581