AAAAAA

   
Results: 1-13 |
Results: 13

Authors: ANYELE HT GRIFFITHS CL CAFOLLA AA MATTHAI CC WILLIAMS RH
Citation: Ht. Anyele et al., METAL-SEMICONDUCTOR FLUCTUATIONS ON RECONSTRUCTED SN-SI(111) SURFACES, Applied surface science, 123, 1998, pp. 480-484

Authors: CAFOLLA AA
Citation: Aa. Cafolla, A NEW STOCHASTIC OPTIMIZATION STRATEGY FOR QUANTITATIVE-ANALYSIS OF CORE-LEVEL PHOTOEMISSION DATA, Surface science, 404(1-3), 1998, pp. 561-565

Authors: POWER JR WEIGHTMAN P CAFOLLA AA
Citation: Jr. Power et al., THE INITIAL-STAGES OF GEGAAS(100) INTERFACE FORMATION STUDIED BY REFLECTANCE ANISOTROPY SPECTROSCOPY AND LOW-ENERGY-ELECTRON DIFFRACTION, Surface science, 404(1-3), 1998, pp. 566-570

Authors: MORIARTY P MA YR DUNN AW BETON PH HENINI M MCGINLEY C MCLOUGHLIN E CAFOLLA AA HUGHES G DOWNES S TEEHAN D MURPHY B
Citation: P. Moriarty et al., ABSENCE OF LONG-RANGE ORDERED RECONSTRUCTION ON THE GAAS(311)A SURFACE, Physical review. B, Condensed matter, 55(23), 1997, pp. 15397-15400

Authors: BENNETT MR DUNSCOMBE CJ CAFOLLA AA CAIRNS JW MACDONALD JE WILLIAMS RH
Citation: Mr. Bennett et al., PHOTOEMISSION-STUDIES OF THE SURFACTANT-AIDED GROWTH OF GE ON TE-TERMINATED SI(100), Surface science, 380(2-3), 1997, pp. 178-189

Authors: CAFOLLA AA MCGINLEY C MCLOUGHLIN E HUGHES G MORIARTY P DUNN AW MA YR TEEHAN D MURPHY B DOWNES S WOOLF DA
Citation: Aa. Cafolla et al., ADSORPTION OF SB ON GAAS(111)B STUDIED BY PHOTOEMISSION AND LOW-ENERGY-ELECTRON DIFFRACTION, Surface science, 377(1-3), 1997, pp. 130-134

Authors: BENNETT MR CAFOLLA AA CAIRNS JW DUNSCOMBE CJ WILLIAMS RH
Citation: Mr. Bennett et al., PHOTOEMISSION-STUDIES OF THE INTERACTIONS OF CDTE AND TE WITH SI(100), Surface science, 360(1-3), 1996, pp. 187-199

Authors: MATTHAI CC GAVARTIN JL CAFOLLA AA
Citation: Cc. Matthai et al., STRUCTURAL AND ELASTIC PROPERTIES OF POROUS SILICON, Thin solid films, 255(1-2), 1995, pp. 174-176

Authors: MORIARTY P MURPHY B ROBERTS L CAFOLLA AA HUGHES G KOENDERS L BAILEY P WOOLF DA
Citation: P. Moriarty et al., CHEMICAL BONDING AND STRUCTURE OF THE SULFUR TREATED GAAS(111)B SURFACE, Applied physics letters, 67(3), 1995, pp. 383-385

Authors: MORIARTY P MURPHY B ROBERTS L CAFOLLA AA HUGHES G KOENDERS L BAILEY P
Citation: P. Moriarty et al., PHOTOELECTRON CORE-LEVEL SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY STUDY OF THE SULFUR-TREATED GAAS(100) SURFACE, Physical review. B, Condensed matter, 50(19), 1994, pp. 14237-14245

Authors: KENNEDY ET COSTELLO JT MOSNIER JP CAFOLLA AA COLLINS M KIERNAN L KOBLE U SAYYAD MH SHAW M SONNTAG BF BARCHEWITZ R
Citation: Et. Kennedy et al., EXTREME-ULTRAVIOLET STUDIES WITH LASER-PRODUCED PLASMAS, Optical engineering, 33(12), 1994, pp. 3984-3992

Authors: GRIFFITHS CL ANYELE HT MATTHAI CC CAFOLLA AA WILLIAMS RH
Citation: Cl. Griffiths et al., EFFECT OF SURFACE RECONSTRUCTION ON FERMI-LEVEL PINNING IN THE SN ON SI(111) SYSTEM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1559-1563

Authors: ANYELE HT CAFOLLA AA MATTHAI CC
Citation: Ht. Anyele et al., A STUDY OF THE ELECTRONIC-STRUCTURE AND SCHOTTKY BARRIERS AT RECONSTRUCTED SN SI INTERFACES, Applied surface science, 70-1, 1993, pp. 433-437
Risultati: 1-13 |