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Results:
1-14
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Results: 14
Authors:
ROCHET F
JOLLY F
BOURNEL F
DUFOUR G
SIROTTI F
CANTIN JL
Citation: F. Rochet et al., ETHYLENE ON SI(001)-2X1 AND SI(111)-7X7 - X-RAY PHOTOEMISSION SPECTROSCOPY WITH SYNCHROTRON-RADIATION, Physical review. B, Condensed matter, 58(16), 1998, pp. 11029-11042
Authors:
CANTIN JL
VONBARDELEBEN HJ
AUTRAN JL
Citation: Jl. Cantin et al., IRRADIATION EFFECTS IN ULTRATHIN SI SIO2 STRUCTURES/, IEEE transactions on nuclear science, 45(3), 1998, pp. 1407-1411
Authors:
BUTTARD D
SCHOISSWOHL M
CANTIN JL
VONBARDELEBEN HJ
Citation: D. Buttard et al., X-RAY-DIFFRACTION AND ELECTRON-MICROSCOPY INVESTIGATION OF POROUS SI1-XGEX, Thin solid films, 297(1-2), 1997, pp. 233-236
Authors:
LEBIB S
SCHOISSWOHL M
CANTIN JL
VONBARDELEBEN HJ
Citation: S. Lebib et al., SIGE SIGEO2 INTERFACE DEFECTS, Thin solid films, 294(1-2), 1997, pp. 242-245
Authors:
VONBARDELEBEN HJ
SCHOISSWOHL M
CANTIN JL
Citation: Hj. Vonbardeleben et al., ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF DEFECTS IN OXIDIZED AND NITRIDED POROUS SI AND SI1-XGEX, Colloids and surfaces. A, Physicochemical and engineering aspects, 115, 1996, pp. 277-289
Authors:
MORAZZANI V
CANTIN JL
ORTEGA C
PAJOT B
RAHBI R
ROSENBAUER M
VONBARDELEBEN HJ
VAZSONYI E
Citation: V. Morazzani et al., THERMAL NITRIDATION OF P-TYPE POROUS SILICON IN AMMONIA, Thin solid films, 276(1-2), 1996, pp. 32-35
Authors:
CANTIN JL
SCHOISSWOHL M
GROSMAN A
LEBIB S
ORTEGA C
VONBARDELEBEN HJ
VAZSONYI E
JALSOVSZKY G
EROSTYAK J
Citation: Jl. Cantin et al., ANODIC-OXIDATION OF P-TYPE AND P(-TYPE POROUS SILICON - SURFACE STRUCTURAL TRANSFORMATIONS AND OXIDE FORMATION()), Thin solid films, 276(1-2), 1996, pp. 76-79
Authors:
SCHOISSWOHL M
CANTIN JL
CHAMARRO M
VONBARDELEBEN HJ
MORGENSTERN T
BUGIEL E
KISSINGER W
ANDREU RC
Citation: M. Schoisswohl et al., DEFECTS AND VISIBLE PHOTOLUMINESCENCE IN POROUS SI1-XGEX, Thin solid films, 276(1-2), 1996, pp. 92-95
Authors:
CANTIN JL
SCHOISSWOHL M
VONBARDELEBEN HJ
ZOUBIR NH
VERGNAT M
Citation: Jl. Cantin et al., OBSERVATION OF (100) SURFACES IN P-TYPE POROUS SILICON BY ELECTRON-PARAMAGNETIC-RESONANCE, Thin solid films, 276(1-2), 1996, pp. 241-243
Authors:
CANTIN JL
SCHOISSWOHL M
VONBARDELEBEN HJ
ROCHET F
DUFOUR G
Citation: Jl. Cantin et al., P-B1 DEFECT STUDY AND CHEMICAL CHARACTERIZATION OF THE SI(001)-SIO2 INTERFACE IN OXIDIZED POROUS SILICON, Surface science, 352, 1996, pp. 793-796
Authors:
SCHOISSWOHL M
ROSENBAUER M
CANTIN JL
LEBIB S
VONBARDELEBEN HJ
FAVE JL
CERNOGORA J
AMATO G
ROSSI A
Citation: M. Schoisswohl et al., PHOTOLUMINESCENCE AND RAMAN-STUDY OF POROUS SIGE, Journal of applied physics, 79(12), 1996, pp. 9301-9304
Authors:
CANTIN JL
SCHOISSWOHL M
VONBARDELEBEN HJ
ZOUBIR NH
VERGNAT M
Citation: Jl. Cantin et al., ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF THE MICROSCOPIC STRUCTURE OFTHE SI(001)-SIO2 INTERFACE, Physical review. B, Condensed matter, 52(16), 1995, pp. 11599-11602
Authors:
SCHOISSWOHL M
CANTIN JL
CHAMARRO M
VONBARDELEBEN HJ
MORGENSTERN T
BUGIEL E
KISSINGER W
ANDREU RC
Citation: M. Schoisswohl et al., STRUCTURE AND VISIBLE PHOTOLUMINESCENCE OF POROUS SI1-XGEX, Physical review. B, Condensed matter, 52(16), 1995, pp. 11898-11903
Authors:
SCHOISSWOHL M
CANTIN JL
VONBARDELEBEN HJ
AMATO G
Citation: M. Schoisswohl et al., ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF LUMINESCENT STAIN ETCHED POROUS SILICON, Applied physics letters, 66(26), 1995, pp. 3660-3662
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1-14
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