AAAAAA
Results:
1-16
|
Results: 16
Authors:
CAPPER P
Citation: P. Capper, EDITORIAL COMMENTS FOR MEL-BACG-1997 PROCEEDINGS, Journal of materials science. Materials in electronics, 9(3), 1998, pp. 5-5
Authors:
OKEEFE ES
MAXEY CD
CAPPER P
Citation: Es. Okeefe et al., INFRARED MATERIALS ACTIVITIES AT GEC-MARCONI-INFRARED-LIMITED .2. EPITAXIAL-GROWTH TECHNIQUES, GEC JOURNAL OF TECHNOLOGY, 14(1), 1997, pp. 7-18
Authors:
HARTLEY RH
FOLKARD MA
CARR D
ORDERS PJ
SHEN G
KUMAR V
STEELE TA
VARGA IK
JOHNSON BA
FUELOOP K
CAPPER P
DUTTON D
BARTON S
GALE I
GRANINGER F
Citation: Rh. Hartley et al., PHASE-MODULATED ELLIPSOMETRY USED FOR COMPOSITION CONTROL DURING MBE GROWTH OF CDHGTE - AN ANALYSIS OF INSTRUMENTAL FACTORS AND AN ASSESSMENT OF THE MATERIAL PRODUCED, Journal of electronic materials, 25(9), 1996, pp. 1521-1526
Authors:
BARTON SC
CAPPER P
JONES CL
METCALFE N
DUTTON D
Citation: Sc. Barton et al., DETERMINATION OF SHOCKLEY-READ TRAP PARAMETERS IN N-TYPE AND P-TYPE EPITAXIAL CDXHG1-XTE, Semiconductor science and technology, 11(8), 1996, pp. 1163-1167
Authors:
CAPPER P
GOSNEY J
HARRIS JE
OKEEFE E
MAXEY CD
Citation: P. Capper et al., INFRARED MATERIALS ACTIVITIES AT GEC-MARCONI INFRARED LIMITED .1. BULK GROWTH TECHNIQUES, GEC journal of research, 13(3), 1996, pp. 164-174
Authors:
CAPPER P
OKEEFE ES
MAXEY C
DUTTON D
MACKETT P
BUTLER C
GALE I
Citation: P. Capper et al., MATRIX AND IMPURITY ELEMENT DISTRIBUTIONS IN CDHGTE (CMT) AND (CD,ZN)(TE,SE) COMPOUNDS BY CHEMICAL-ANALYSIS, Journal of crystal growth, 161(1-4), 1996, pp. 104-118
Authors:
WASENCZUK A
WILLOUGHBY AFW
MACKETT P
OKEEFE E
CAPPER P
MAXEY CD
Citation: A. Wasenczuk et al., EXTENDED DEFECTS IN EPITAXIAL CADMIUM MERCURY TELLURIDE, Journal of crystal growth, 159(1-4), 1996, pp. 1090-1095
Authors:
GRAINGER F
GALE IG
CAPPER P
MAXEY CD
MACKETT P
OKEEFE E
GOSNEY J
Citation: F. Grainger et al., IMPURITY SURVEY ANALYSIS OF CDXHG1-XTE BY LASER SCAN MASS-SPECTROMETRY, Advanced materials for optics and electronics, 5(2), 1995, pp. 71-78
Authors:
GALE IG
CLEGG JB
CAPPER P
MAXEY CD
MACKETT P
OKEEFE E
Citation: Ig. Gale et al., MEASUREMENT OF CDXHG1-XTE COMPOSITION DEPTH PROFILES USING AUGER-ELECTRON SPECTROMETRY ON BEVELED SECTIONS, Advanced materials for optics and electronics, 5(2), 1995, pp. 79-86
Authors:
CAPPER P
HARRIS JE
OKEEFFE ES
JONES CL
GALE I
Citation: P. Capper et al., MACROSEGREGATION AND MICROSEGREGATION OF ZN IN BRIDGMAN-GROWN CDZNTE, Advanced materials for optics and electronics, 5(2), 1995, pp. 101-108
Authors:
JONES ED
MALZBENDER J
SHAW N
CAPPER P
MULLIN JB
Citation: Ed. Jones et al., A COMPARISON OF THE DIFFUSION OF IODINE INTO CDTE, HG0.8CD0.2TE AND ZN0.05GD0.95TE, Journal of electronic materials, 24(9), 1995, pp. 1225-1229
Authors:
BARTON S
DUTTON D
CAPPER P
JONES CL
METCALFE N
Citation: S. Barton et al., MINORITY-CARRIER LIFETIME IN DOPED AND UNDOPED EPITAXIALLY GROWN N-TYPE CDXHG1-XTE, Journal of electronic materials, 24(11), 1995, pp. 1759-1764
Authors:
BARTON S
CAPPER P
JONES CL
METCALFE N
GORDON NT
Citation: S. Barton et al., ELECTRON-MOBILITY IN P-TYPE EPITAXIALLY GROWN CDXHG1-XTE, Semiconductor science and technology, 10(1), 1995, pp. 56-60
Authors:
CAPPER P
Citation: P. Capper, THE ROLE OF ACCELERATED CRUCIBLE ROTATION IN THE GROWTH OF HG1-XCDXTEAND CDTE CDZNTE/, Progress in crystal growth and characterization of materials, 28(1-2), 1994, pp. 1-55
Authors:
CAPPER P
ROBERTS JA
Citation: P. Capper et Ja. Roberts, CHEMICAL-ANALYSIS OF AND DOPANT IMPURITY BEHAVIOR IN HG1-XCDXTE AND RELATED MATERIALS/, Progress in crystal growth and characterization of materials, 28(1-2), 1994, pp. 165-217
Authors:
HASTINGS MP
MAXEY CD
MAXEY CD
MATTHEWS BE
METCALFE NE
CAPPER P
JONES CL
GALE IG
Citation: Mp. Hastings et al., ELECTRON-BEAM-INDUCED CURRENT ASSESSMENT OF DOPED AND DIFFUSED JUNCTIONS IN EPITAXIAL CDXHG1-XTE, Journal of crystal growth, 138(1-4), 1994, pp. 917-923
Risultati:
1-16
|