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Results:
1-17
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Results: 17
Authors:
CARLONE C
PARENTEAU M
KHANNA SM
Citation: C. Carlone et al., GIGAELECTRON-VOLT HEAVY-ION IRRADIATION OF GALLIUM-ARSENIDE, Journal of applied physics, 83(10), 1998, pp. 5164-5170
Authors:
CARLONE C
Citation: C. Carlone, ELECTRONIC CONFIGURATION OF THE GALLIUM AND ARSENIC VACANCIES IN GAAS, Journal of luminescence, 72-4, 1997, pp. 646-647
Authors:
PARENTEAU M
CARLONE C
MORRIS D
KHANNA SM
Citation: M. Parenteau et al., TIME-RESOLVED SPECTROSCOPY OF IRRADIATED N-GAAS, IEEE transactions on nuclear science, 44(6), 1997, pp. 1849-1855
Authors:
CARLONE C
PARENTEAU M
HOUDAYER A
HINRICHSEN P
VINCENT J
Citation: C. Carlone et al., PHOTOLUMINESCENCE STUDY OF GALLIUM VACANCY DEFECTS IN GALLIUM-ARSENIDE IRRADIATED BY RELATIVISTIC PROTONS, IEEE transactions on nuclear science, 44(6), 1997, pp. 1856-1861
Authors:
JORIO A
CARLONE C
PARENTEAU M
AKTIK C
ROWELL NL
Citation: A. Jorio et al., FORMATION OF EL2, AS(GA) AND U-BAND IN IRRADIATED GAAS - EFFECTS OF ANNEALING, Journal of applied physics, 80(3), 1996, pp. 1364-1369
Authors:
KHANNA SM
HOUDAYER A
JORIO A
CARLONE C
PARENTEAU M
GERDES JW
Citation: Sm. Khanna et al., NUCLEAR RADIATION DISPLACEMENT DAMAGE PREDICTION IN GALLIUM-ARSENIDE THROUGH LOW-TEMPERATURE PHOTOLUMINESCENCE MEASUREMENTS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2601-2608
Authors:
JORIO A
CARLONE C
ROWELL NL
HOUDAYER A
PARENTEAU M
Citation: A. Jorio et al., NATIVE DEFECTS IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AND METALLORGANIC CHEMICAL-VAPOR-DEPOSITION - EFFECTS OF IRRADIATION, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 160-165
Authors:
PARENTEAU M
WU FM
JORIO A
CARLONE C
Citation: M. Parenteau et al., PHOTOCONDUCTIVITY OF GALLIUM-ARSENIDE EPITAXIAL LAYERS, Journal of applied physics, 77(10), 1995, pp. 5185-5190
Authors:
KHANNA SM
JORIO A
CARLONE C
PARENTEAU M
HOUDAYER A
GERDES JW
Citation: Sm. Khanna et al., PARTICLE DEPENDENCE OF THE GALLIUM VACANCY PRODUCTION IN IRRADIATED N-TYPE GALLIUM-ARSENIDE, IEEE transactions on nuclear science, 42(6), 1995, pp. 2095-2103
Authors:
CARLONE C
BUTEAU M
Citation: C. Carlone et M. Buteau, STUDIES OF IRRADIATED CADMIUM-SULFIDE IN A DIAMOND-ANVIL PRESSURE CELL, Canadian journal of physics, 73(5-6), 1995, pp. 324-329
Authors:
WU FM
SHI Y
PARENTEAU M
JORIO A
CARLONE C
Citation: Fm. Wu et al., ANALYSIS OF FREE-EXCITON PROPERTIES IN GAAS EPITAXIAL LAYERS WITH THEIMPROVED MODEL OF PHOTOCONDUCTIVITY SPECTRA, Physica status solidi. b, Basic research, 186(1), 1994, pp. 133-141
Authors:
CARLONE C
REJEB C
JORIO A
PARENTEAU M
KHANNA SM
Citation: C. Carlone et al., RADIATION-INDUCED CARBON COMPLEXES IN GALLIUM-ARSENIDE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 90(1-4), 1994, pp. 405-408
Authors:
JORIO A
WANG A
PARENTEAU M
CARLONE C
ROWELL NL
KHANNA SM
Citation: A. Jorio et al., OPTICAL-IDENTIFICATION OF THE GALLIUM VACANCY IN NEUTRON-IRRADIATED GALLIUM-ARSENIDE, Physical review. B, Condensed matter, 50(3), 1994, pp. 1557-1566
Authors:
JORIO A
PARENTEAU M
AUBIN M
CARLONE C
KHANNA SM
GERDES JW
Citation: A. Jorio et al., A MOBILITY STUDY OF THE RADIATION-INDUCED ORDER EFFECT IN GALLIUM-ARSENIDE, IEEE transactions on nuclear science, 41(6), 1994, pp. 1937-1944
Authors:
GHAMLOUCH H
AUBIN M
CARLONE C
KHANNA SM
Citation: H. Ghamlouch et al., ELECTRON-IRRADIATION OF GAAS - IMPROVEMENT OF TRANSPORT-PROPERTIES AND OBSERVATION OF DX-LIKE CENTERS AT AMBIENT-PRESSURE, Journal of applied physics, 74(7), 1993, pp. 4357-4362
Authors:
JORIO A
REJEB C
PARENTEAU M
CARLONE C
KHANNA SM
Citation: A. Jorio et al., RADIATION-INDUCED CARRIER ENHANCEMENT AND INTRINSIC DEFECT TRANSFORMATION IN N-GAAS, Journal of applied physics, 74(4), 1993, pp. 2310-2317
Authors:
KHANNA SM
REJEB C
JORIO A
PARENTEAU M
CARLONE C
GERDES JW
Citation: Sm. Khanna et al., ELECTRON AND NEUTRON RADIATION-INDUCED ORDER EFFECT IN GALLIUM-ARSENIDE, IEEE transactions on nuclear science, 40(6), 1993, pp. 1350-1359
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