AAAAAA

   
Results: 1-19 |
Results: 19
AL L-CORE EDGE PINE STRUCTURE IN AL, ALN AND ALPHA-AL2O3 - A COMPARISON OF MICROELECTRON ENERGY-LOSS SPECTRA WITH THEORY
Authors: FAN XJ BOW JS CARPENTER RW LIN SH TIAN SF
Citation: Xj. Fan et al., AL L-CORE EDGE PINE STRUCTURE IN AL, ALN AND ALPHA-AL2O3 - A COMPARISON OF MICROELECTRON ENERGY-LOSS SPECTRA WITH THEORY, Acta physica Sinica, 7(3), 1998, pp. 214-226
ATOMIC-STRUCTURE AND CHEMISTRY OF BOUNDARIES INTERFACES - INTRODUCTION/
Authors: CARPENTER RW
Citation: Rw. Carpenter, ATOMIC-STRUCTURE AND CHEMISTRY OF BOUNDARIES INTERFACES - INTRODUCTION/, MICROSCOPY AND MICROANALYSIS, 3(4), 1997, pp. 332-332
INFLUENCE OF TEMPERATURE AND STRAIN-RATE ON THE MECHANICAL-BEHAVIOR OF ADIPRENE L-100
Authors: GRAY GT BLUMENTHAL WR TRUJILLO CP CARPENTER RW
Citation: Gt. Gray et al., INFLUENCE OF TEMPERATURE AND STRAIN-RATE ON THE MECHANICAL-BEHAVIOR OF ADIPRENE L-100, Journal de physique. IV, 7(C3), 1997, pp. 523-528
MICROSTRUCTURE, ELECTRICAL-PROPERTIES, AND THERMAL-STABILITY OF AU-BASED OHMIC CONTACTS TO P-GAN
Authors: SMITH LL DAVIS RF KIM MJ CARPENTER RW HUANG Y
Citation: Ll. Smith et al., MICROSTRUCTURE, ELECTRICAL-PROPERTIES, AND THERMAL-STABILITY OF AU-BASED OHMIC CONTACTS TO P-GAN, Journal of materials research, 12(9), 1997, pp. 2249-2254
MICROSTRUCTURE, ELECTRICAL-PROPERTIES, AND THERMAL-STABILITY OF AL OHMIC CONTACTS TO N-GAN
Authors: SMITH LL DAVIS RF KIM MJ CARPENTER RW HUANG Y
Citation: Ll. Smith et al., MICROSTRUCTURE, ELECTRICAL-PROPERTIES, AND THERMAL-STABILITY OF AL OHMIC CONTACTS TO N-GAN, Journal of materials research, 11(9), 1996, pp. 2257-2262
DOCKING OF DOGS TAILS
Authors: CARPENTER RW
Citation: Rw. Carpenter, DOCKING OF DOGS TAILS, Veterinary record, 139(9), 1996, pp. 220-220
LOCAL CHEMISTRY AT INTERFACES AND BOUNDARIES - CERAMIC AND ELECTRONICCOMPOSITE-MATERIALS
Authors: CARPENTER RW BOW JS KIM MJ DASCHOWDHURY K BRAUE W
Citation: Rw. Carpenter et al., LOCAL CHEMISTRY AT INTERFACES AND BOUNDARIES - CERAMIC AND ELECTRONICCOMPOSITE-MATERIALS, Microscopy microanalysis microstructures, 6(5-6), 1995, pp. 587-599
CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF PLATINUM AND ALPHA-(6H) SILICON-CARBIDE(0001)
Authors: PORTER LM DAVIS RF BOW JS KIM MJ CARPENTER RW
Citation: Lm. Porter et al., CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF PLATINUM AND ALPHA-(6H) SILICON-CARBIDE(0001), Journal of materials research, 10(9), 1995, pp. 2336-2342
CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF TITANIUM AND ALPHA(6H)-SILICON-CARBIDE(0001)
Authors: PORTER LM DAVIS RF BOW JS KIM MJ CARPENTER RW GLASS RC
Citation: Lm. Porter et al., CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF TITANIUM AND ALPHA(6H)-SILICON-CARBIDE(0001), Journal of materials research, 10(3), 1995, pp. 668-679
CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF COBALT AND ALPHA-(6H) SILICON CARBIDE-(0001)
Authors: PORTER LM DAVIS RF BOW JS KIM MJ CARPENTER RW
Citation: Lm. Porter et al., CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF COBALT AND ALPHA-(6H) SILICON CARBIDE-(0001), Journal of materials research, 10(1), 1995, pp. 26-33
LOW-RESISTANCE PD GE OHMIC CONTACTS TO EPITAXIALLY LIFTED-OFF N-TYPE GAAS FILM/
Authors: FATHOLLAHNEJAD H RAJESH R LIU J DROOPAD R MARACAS GN CARPENTER RW
Citation: H. Fathollahnejad et al., LOW-RESISTANCE PD GE OHMIC CONTACTS TO EPITAXIALLY LIFTED-OFF N-TYPE GAAS FILM/, Journal of electronic materials, 24(1), 1995, pp. 35-38
CHEMICAL AND STRUCTURAL WIDTHS OF INTERFACES AND GRAIN-BOUNDARIES IN SILICON NITRIDE-SILICON CARBIDE WHISKER COMPOSITES
Authors: DASCHOWDHURY K CARPENTER RW BRAUE W LIU J MA H
Citation: K. Daschowdhury et al., CHEMICAL AND STRUCTURAL WIDTHS OF INTERFACES AND GRAIN-BOUNDARIES IN SILICON NITRIDE-SILICON CARBIDE WHISKER COMPOSITES, Journal of the American Ceramic Society, 78(10), 1995, pp. 2579-2592
APPLICATION OF THE DIGITAL ALLOY COMPOSITION GRADING TECHNIQUE TO STRAINED INGAAS GAAS/ALGAAS DIODE-LASER ACTIVE REGIONS/
Authors: CODY JG MATHINE DL DROOPAD R MARACAS GN RAJESH R CARPENTER RW
Citation: Jg. Cody et al., APPLICATION OF THE DIGITAL ALLOY COMPOSITION GRADING TECHNIQUE TO STRAINED INGAAS GAAS/ALGAAS DIODE-LASER ACTIVE REGIONS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 1075-1077
NANOSTRUCTURE AND CHEMICAL INHOMOGENEITY IN TBFE MAGNETOOPTICAL FILMS
Authors: KIM MJ BOW JS CARPENTER RW LIU J KIM SG LEE SK KIM WM YOON JS
Citation: Mj. Kim et al., NANOSTRUCTURE AND CHEMICAL INHOMOGENEITY IN TBFE MAGNETOOPTICAL FILMS, IEEE transactions on magnetics, 30(6), 1994, pp. 4398-4400
WARPAGE AND OXIDE PRECIPITATE DISTRIBUTIONS IN CZ SILICON-WAFERS
Authors: CHIOU HD CHEN Y CARPENTER RW JEONG J
Citation: Hd. Chiou et al., WARPAGE AND OXIDE PRECIPITATE DISTRIBUTIONS IN CZ SILICON-WAFERS, Journal of the Electrochemical Society, 141(7), 1994, pp. 1856-1862
THE COMPOSITION AND STRUCTURE OF SIPOS - A HIGH-SPATIAL-RESOLUTION ELECTRON-MICROSCOPY STUDY
Authors: CATALANO M KIM MJ CARPENTER RW DASCHOWDHURY K WONG J
Citation: M. Catalano et al., THE COMPOSITION AND STRUCTURE OF SIPOS - A HIGH-SPATIAL-RESOLUTION ELECTRON-MICROSCOPY STUDY, Journal of materials research, 8(11), 1993, pp. 2893-2901
A COMPARISON OF AS AND P-BASED SEMICONDUCTORS GROWN AT LOW-TEMPERATURES BY MBE AND GSMBE
Authors: MARACAS GN SHIRALAGI K RAMAMURTI R CARPENTER RW
Citation: Gn. Maracas et al., A COMPARISON OF AS AND P-BASED SEMICONDUCTORS GROWN AT LOW-TEMPERATURES BY MBE AND GSMBE, Journal of electronic materials, 22(12), 1993, pp. 1375-1381
THIN-FILM TI 6H-SIC INTERFACIAL REACTION - HIGH-SPATIAL-RESOLUTION ELECTRON-MICROSCOPY STUDY/
Authors: BOW JS PORTER LM KIM MJ CARPENTER RW DAVIS RF
Citation: Js. Bow et al., THIN-FILM TI 6H-SIC INTERFACIAL REACTION - HIGH-SPATIAL-RESOLUTION ELECTRON-MICROSCOPY STUDY/, Ultramicroscopy, 52(3-4), 1993, pp. 289-296
ABINITIO CALCULATION OF BAND-STRUCTURE, X-RAY-EMISSION, QUANTUM YIELD, AND ELECTRON-ENERGY-LOSS SPECTRA OF HEXAGONAL BORON-NITRIDE
Authors: MA H LIN SH CARPENTER RW RICE P SANKEY OF
Citation: H. Ma et al., ABINITIO CALCULATION OF BAND-STRUCTURE, X-RAY-EMISSION, QUANTUM YIELD, AND ELECTRON-ENERGY-LOSS SPECTRA OF HEXAGONAL BORON-NITRIDE, Journal of applied physics, 73(11), 1993, pp. 7422-7426
Risultati: 1-19 |