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Results: 1-8 |
Results: 8
SURFACE-ROUGHNESS OF REACTIVE ION ETCHED 4H-SIC IN SF6 O-2 AND CHF3/H-2/O-2 PLASMAS/
Authors: CASADY JB MANI SS SIERGIEJ RR URBAN W BALAKRISHNA V SANGER PA BRANDT CD
Citation: Jb. Casady et al., SURFACE-ROUGHNESS OF REACTIVE ION ETCHED 4H-SIC IN SF6 O-2 AND CHF3/H-2/O-2 PLASMAS/, Journal of the Electrochemical Society, 145(4), 1998, pp. 58-60
1.1 KV 4H-SIC POWER UMOSFETS
Authors: AGARWAL AK CASADY JB ROWLAND LB VALEK WF WHITE MH BRANDT CD
Citation: Ak. Agarwal et al., 1.1 KV 4H-SIC POWER UMOSFETS, IEEE electron device letters, 18(12), 1997, pp. 586-588
700-V ASYMMETRICAL 4H-SIC GATE TURN-OFF THYRISTORS (GTOS)
Authors: AGARWAL AK CASADY JB ROWLAND LB SESHADRI S SIERGIEJ RR VALEK WF BRANDT CD
Citation: Ak. Agarwal et al., 700-V ASYMMETRICAL 4H-SIC GATE TURN-OFF THYRISTORS (GTOS), IEEE electron device letters, 18(11), 1997, pp. 518-520
A HYBRID GH-SIC TEMPERATURE SENSOR OPERATIONAL FROM 25-DEGREES-C TO 500-DEGREES-C
Authors: CASADY JB DILLARD WC JOHNSON RW RAO U
Citation: Jb. Casady et al., A HYBRID GH-SIC TEMPERATURE SENSOR OPERATIONAL FROM 25-DEGREES-C TO 500-DEGREES-C, IEEE transactions on components, packaging, and manufacturing technology. Part A, 19(3), 1996, pp. 416-422
DIRECT-CURRENT CHARACTERIZATION OF DEPLETION-MODE 6H-SIC MOSFETS FROM294 TO 723 K
Authors: CASADY JB CRESSLER JD DILLARD WC JOHNSON RW AGARWAL AK SIERGIEJ RR
Citation: Jb. Casady et al., DIRECT-CURRENT CHARACTERIZATION OF DEPLETION-MODE 6H-SIC MOSFETS FROM294 TO 723 K, Solid-state electronics, 39(6), 1996, pp. 777-784
STATUS OF SILICON-CARBIDE (SIC) AS A WIDE-BANDGAP SEMICONDUCTOR FOR HIGH-TEMPERATURE APPLICATIONS - A REVIEW
Authors: CASADY JB JOHNSON RW
Citation: Jb. Casady et Rw. Johnson, STATUS OF SILICON-CARBIDE (SIC) AS A WIDE-BANDGAP SEMICONDUCTOR FOR HIGH-TEMPERATURE APPLICATIONS - A REVIEW, Solid-state electronics, 39(10), 1996, pp. 1409-1422
ETCHING OF 6H-SIC AND 4H-SIC USING NF3 IN A REACTIVE ION ETCHING SYSTEM
Authors: CASADY JB LUCKOWSKI ED BOZACK M SHERIDAN D JOHNSON RW WILLIAMS JR
Citation: Jb. Casady et al., ETCHING OF 6H-SIC AND 4H-SIC USING NF3 IN A REACTIVE ION ETCHING SYSTEM, Journal of the Electrochemical Society, 143(5), 1996, pp. 1750-1753
LOW-FREQUENCY NOISE IN 6H-SIC MOSFETS
Authors: CASADY JB DILLARD W JOHNSON RW AGARWAL AK SIERGIEJ RR WAGNER WE
Citation: Jb. Casady et al., LOW-FREQUENCY NOISE IN 6H-SIC MOSFETS, IEEE electron device letters, 16(6), 1995, pp. 274-276
Risultati: 1-8 |