Authors: CHANELIERE C AUTRAN JL DEVINE RAB BALLAND B

Citation: C. Chaneliere et al., TANTALUM PENTOXIDE (TA2O5) THIN-FILMS FOR ADVANCED DIELECTRIC APPLICATIONS, Materials science & engineering. R, Reports, 22(6), 1998, pp. 269-322

Authors: CHANELIERE C FOUR S AUTRAN JL DEVINE RAB SANDLER NP

Citation: C. Chaneliere et al., PROPERTIES OF AMORPHOUS AND CRYSTALLINE TA2O5 THIN-FILMS DEPOSITED ONSI FROM A TA(OC2H5)(5) PRECURSOR, Journal of applied physics, 83(9), 1998, pp. 4823-4829

Authors: AUTRAN JL DEVINE R CHANELIERE C BALLAND B

Citation: Jl. Autran et al., FABRICATION AND CHARACTERIZATION OF SI-MOSFETS WITH PECVD AMORPHOUS TA2O5 GATE INSULATOR, IEEE electron device letters, 18(9), 1997, pp. 447-449

Authors: DEVINE RAB CHANELIERE C AUTRAN JL BALLAND B PAILLET P LERAY JL

Citation: Rab. Devine et al., USE OF CARBON-FREE TA2O5 THIN-FILMS AS A GATE INSULATOR, Microelectronic engineering, 36(1-4), 1997, pp. 61-64

Authors: SEMMACHE B LEMITI M CHANELIERE C DUBOIS C SIBAI A CANUT B LAUGIER A

Citation: B. Semmache et al., SILICON-NITRIDE AND OXYNITRIDE DEPOSITION BY RT-LPCVD, Thin solid films, 296(1-2), 1997, pp. 32-36