Authors:
CHANG EY
MAO SY
METZGER H
HOLOWKA D
BAIRD B
Citation: Ey. Chang et al., EFFECTS OF SUBUNIT MUTATION ON THE ROTATIONAL-DYNAMICS OF FC-EPSILON-RI, THE HIGH-AFFINITY RECEPTOR FOR IGE, IN TRANSFECTED CELLS, Biochemistry, 34(18), 1995, pp. 6093-6099
Citation: Ey. Chang et al., ALTERATION OF LIPID-COMPOSITION MODULATES FC-EPSILON-RI SIGNALING IN RBL-2H3 CELLS, Biochemistry, 34(13), 1995, pp. 4376-4384
Authors:
SZALLASI Z
DENNING MF
CHANG EY
RIVERA J
YUSPA SH
LEHEL C
OLAH Z
ANDERSON WB
BLUMBERG PM
Citation: Z. Szallasi et al., DEVELOPMENT OF A RAPID APPROACH TO IDENTIFICATION OF TYROSINE PHOSPHORYLATION SITES - APPLICATION TO PKC-DELTA PHOSPHORYLATED UPON ACTIVATION OF THE HIGH-AFFINITY RECEPTOR FOR IGE IN RAT BASOPHILIC LEUKEMIA-CELLS, Biochemical and biophysical research communications, 214(3), 1995, pp. 888-894
Authors:
WU JW
CHANG CY
LIN KC
CHAN SH
CHEN HD
CHEN PA
CHANG EY
KUO MS
Citation: Jw. Wu et al., CATION SOURCE DEPENDENCE OF GA0.5IN0.5P GROWTH-RATE BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 33(6B), 1994, pp. 120000832-120000833
Authors:
CHANG EY
LIN KC
WU JW
CHEN TH
CHEN JS
WANG SP
Citation: Ey. Chang et al., PASSIVATION OF GAAS POWER FIELD-EFFECT TRANSISTOR USING ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE TECHNIQUE, JPN J A P 2, 33(12A), 1994, pp. 120001659-120001661
Citation: Tj. Feder et al., DISPARATE MODULATION OF PLASMA-MEMBRANE PROTEIN LATERAL MOBILITY BY VARIOUS CELL PERMEABILIZING AGENTS, Journal of cellular physiology, 158(1), 1994, pp. 7-16
Authors:
LAWRENCE TS
DAVIS MA
CHANG EY
STETSON P
NORMOLLE DP
ENSMINGER WD
Citation: Ts. Lawrence et al., KINETICS OF BROMODEOXYURIDINE WASHOUT IN MICE BEARING HUMAN TUMOR XENOGRAFTS, International journal of radiation oncology, biology, physics, 27, 1993, pp. 243-244
Citation: Ey. Chang et al., STUDY OF SCHOTTKY CONTACTS ON N-GA0.51IN0.49P BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 74(9), 1993, pp. 5622-5625
Citation: Kc. Lin et al., A PSEUDOMORPHIC GAINP INP MESFET WITH IMPROVED DEVICE PERFORMANCE/, I.E.E.E. transactions on electron devices, 40(12), 1993, pp. 2361-2362