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Results: 1-13 |
Results: 13
A CURRENT CONVEYOR-BASED HIGH-FREQUENCY ANALOG SWITCH
Authors: PREMONT C ABOUCHI N GRISEL R CHANTE JP
Citation: C. Premont et al., A CURRENT CONVEYOR-BASED HIGH-FREQUENCY ANALOG SWITCH, IEEE transactions on circuits and systems. 1, Fundamental theory andapplications, 45(3), 1998, pp. 298-300
A CURRENT CONVEYOR BASED FIELD-PROGRAMMABLE ANALOG ARRAY
Authors: PREMONT C GRISEL R ABOUCHI N CHANTE JP
Citation: C. Premont et al., A CURRENT CONVEYOR BASED FIELD-PROGRAMMABLE ANALOG ARRAY, Analog integrated circuits and signal processing, 17(1-2), 1998, pp. 105-124
ELECTRICAL CHARACTERIZATION OF SILICON-CARBIDE N(-IMPLANTED N(+) EMITTER()PP(+) DIODES WITH AN N)
Authors: RAYNAUD C GHAFFOUR K ORTOLLAND S LOCATELLI ML SOUIFI K GUILLOT G CHANTE JP
Citation: C. Raynaud et al., ELECTRICAL CHARACTERIZATION OF SILICON-CARBIDE N(-IMPLANTED N(+) EMITTER()PP(+) DIODES WITH AN N), Journal of applied physics, 84(6), 1998, pp. 3073-3077
SURFACE EFFECTS ON CURRENT MECHANISMS IN 6H-SIC N(+)PP(+) STRUCTURES PASSIVATED WITH A DEPOSITED OXIDE
Authors: ORTOLLAND S RAYNAUD C LOCATELLI ML CHANTE JP SENES A
Citation: S. Ortolland et al., SURFACE EFFECTS ON CURRENT MECHANISMS IN 6H-SIC N(+)PP(+) STRUCTURES PASSIVATED WITH A DEPOSITED OXIDE, Journal of applied physics, 84(3), 1998, pp. 1688-1692
SOME COMMUNICATIONS PRESENTED AT THE 3RD ELECTRICAL-ENGINEERING MEETING FOR YOUNG RESEARCHERS - FOREWORD
Authors: CHANTE JP
Citation: Jp. Chante, SOME COMMUNICATIONS PRESENTED AT THE 3RD ELECTRICAL-ENGINEERING MEETING FOR YOUNG RESEARCHERS - FOREWORD, Journal de physique. III, 7(4), 1997, pp. 791-791
NUMERICAL AND ANALYTICAL INVESTIGATIONS ON IGBTS THERMAL-BEHAVIOR
Authors: CALMON F CHANTE JP SENES A REYMOND B
Citation: F. Calmon et al., NUMERICAL AND ANALYTICAL INVESTIGATIONS ON IGBTS THERMAL-BEHAVIOR, Journal de physique. III, 7(3), 1997, pp. 689-705
DEEP CENTERS AND NEGATIVE TEMPERATURE-COEFFICIENT OF THE BREAKDOWN VOLTAGE OF SIC P-N STRUCTURES
Authors: LEBEDEV AA ORTOLAND S RAYNAUD C LOCATELLI ML PLANSON D CHANTE JP
Citation: Aa. Lebedev et al., DEEP CENTERS AND NEGATIVE TEMPERATURE-COEFFICIENT OF THE BREAKDOWN VOLTAGE OF SIC P-N STRUCTURES, Semiconductors, 31(7), 1997, pp. 735-737
PERIPHERY PROTECTION FOR SILICON-CARBIDE DEVICES - STATE-OF-THE-ART AND SIMULATION
Authors: PLANSON D LOCATELLI ML ORTOLLAND S CHANTE JP MITLEHNER H STEPHANI D
Citation: D. Planson et al., PERIPHERY PROTECTION FOR SILICON-CARBIDE DEVICES - STATE-OF-THE-ART AND SIMULATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 210-217
MONTECARLO SIMULATION OF ION-IMPLANTATION INTO SIC-6H SINGLE-CRYSTAL INCLUDING CHANNELING EFFECT
Authors: MORVAN E GODIGNON P MONTSERRAT J FERNANDEZ J FLORES D MILLAN J CHANTE JP
Citation: E. Morvan et al., MONTECARLO SIMULATION OF ION-IMPLANTATION INTO SIC-6H SINGLE-CRYSTAL INCLUDING CHANNELING EFFECT, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 218-222
DAMAGE ANNEALING AND DOPANT ACTIVATION IN AL ION-IMPLANTED ALPHA-SIC
Authors: CANUT B RAMOS S ROGER JA CHANTE JP LOCATELLI ML PLANSON D
Citation: B. Canut et al., DAMAGE ANNEALING AND DOPANT ACTIVATION IN AL ION-IMPLANTED ALPHA-SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 267-270
DESIGN CONSIDERATIONS OF A MOS-BIPOLAR DARLINGTON STRUCTURE - THE VERTICAL INSULATED BASE TRANSISTOR (IBT)
Authors: GODIGNON P FERNANDEZ J FLORES D HIDALGO S REBOLLO J MILLAN J CHANTE JP
Citation: P. Godignon et al., DESIGN CONSIDERATIONS OF A MOS-BIPOLAR DARLINGTON STRUCTURE - THE VERTICAL INSULATED BASE TRANSISTOR (IBT), Solid-state electronics, 39(12), 1996, pp. 1777-1782
EFFECT OF BORON-DIFFUSION ON THE HIGH-VOLTAGE BEHAVIOR OF 6H-SIC P(+)NN(+) STRUCTURES
Authors: ORTOLLAND S RAYNAUD C CHANTE JP LOCATELLI ML LEBEDEV AA ANDREEV AN SAVKINA NS CHELNOKOV VE RASTEGAEVA MG SYRKIN AL
Citation: S. Ortolland et al., EFFECT OF BORON-DIFFUSION ON THE HIGH-VOLTAGE BEHAVIOR OF 6H-SIC P(+)NN(+) STRUCTURES, Journal of applied physics, 80(9), 1996, pp. 5464-5468
NUMERICAL MODELING OF GATE TURN-OFF THYRISTOR USING SICOS
Authors: NI DG ROJAT G CLERC G CHANTE JP
Citation: Dg. Ni et al., NUMERICAL MODELING OF GATE TURN-OFF THYRISTOR USING SICOS, IEEE transactions on industrial electronics, 40(3), 1993, pp. 326-333
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