Authors:
ORTEGA L
HUANG L
CHEVRIER J
ZEPPENFELD P
GAY JM
RIEUTORD F
COMSA G
Citation: L. Ortega et al., COMBINED X-RAY AND STM STUDY OF THE OXYGEN-INDUCED RESTRUCTURING OF THE AU(111) SURFACE, Surface review and letters, 4(6), 1997, pp. 1315-1319
Authors:
GALLAS B
BERBEZIER I
CHEVRIER J
DERRIEN J
Citation: B. Gallas et al., GALLIUM-MEDIATED HOMOEPITAXIAL GROWTH OF SILICON AT LOW-TEMPERATURES, Physical review. B, Condensed matter, 54(7), 1996, pp. 4919-4925
Citation: J. Chevrier et al., CHARACTERIZATION BY SCANNING-TUNNELING-MICROSCOPY OF THE OXYGEN-INDUCED RESTRUCTURING OF AU(111), Surface science, 355(1-3), 1996, pp. 1-12
Citation: L. Huang et al., SURFACE-MORPHOLOGY OF AU(111) AFTER EXPOSURE TO OXYGEN AT HIGH-TEMPERATURE AND PRESSURE, Surface science, 352, 1996, pp. 285-289
Citation: J. Chevrier, TANSI,SONY,LABOU - WRITER OF SHAME AND OF THE BANKS OF THE CONGO - FRENCH - DEVESA,JM, Europe-Revue littéraire mensuelle, 74(806-07), 1996, pp. 247-248
Citation: L. Huang et al., OBSERVATION BY SCANNING-TUNNELING-MICROSCOPY OF A HEXAGONAL AU(111) SURFACE RECONSTRUCTION INDUCED BY OXYGEN, Applied physics letters, 66(8), 1995, pp. 935-940
Citation: J. Chevrier et al., NONEQUILIBRIUM STATE AND LATTICE INSTABILITY IN SUPERSATURATED ALUMINUM-SILICON SOLID-SOLUTIONS, Physical review. B, Condensed matter, 49(2), 1994, pp. 961-968
Authors:
KOWNATOR S
DUTREYDUPAGNE C
VAUR L
CHEVRIER J
DIESEL J
DHOTEL R
SCHAAF R
COURVOISIER A
BRETON C
Citation: S. Kownator et al., EVALUATION OF THE DURATION OF ACTION OF T RANDOLAPRIL BY AMBULATORY BLOOD-PRESSURE MONITORING, Therapie, 49(2), 1994, pp. 89-93
Citation: I. Berbezier et al., HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF ALPHA-FESI2 HETEROEPITAXY ON SI(111), Surface science, 315(1-2), 1994, pp. 27-39
Citation: J. Chevrier et al., STRAINED AND RELAXED SEMICONDUCTING SILICIDE LAYERS HETEROEPITAXIALLYGROWN ON SILICON, Scanning microscopy, 7(2), 1993, pp. 473-480
Authors:
DERRIEN J
CHEVRIER J
LETHANH V
CRUMBAKER TE
NATOLI JY
BERBEZIER I
Citation: J. Derrien et al., SILICIDE EPILAYERS - RECENT DEVELOPMENTS AND PROSPECTS FOR A SI-COMPATIBLE TECHNOLOGY, Applied surface science, 70-1, 1993, pp. 546-558
Authors:
MAHAN JE
LETHANH V
CHEVRIER J
BERBEZIER I
DERRIEN J
LONG RG
Citation: Je. Mahan et al., SURFACE ELECTRON-DIFFRACTION PATTERNS OF BETA-FESI2 FILMS EPITAXIALLYGROWN ON SILICON, Journal of applied physics, 74(3), 1993, pp. 1747-1761