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Results:
1-23
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Results: 23
Authors:
SHEU JK
SU YK
CHANG SJ
JOU MJ
LIU CC
CHI GC
Citation: Jk. Sheu et al., INVESTIGATION OF WAFER-BONDED (ALXGA1-X)(0.5)IN0.5P GAP LIGHT-EMITTING-DIODES/, IEE proceedings. Optoelectronics, 145(4), 1998, pp. 248-252
Authors:
ZHANG ZB
CHI GC
ZHOU ZH
JIN BH
CHEN RY
Citation: Zb. Zhang et al., STUDY OF THE HYDROGENATION OF ALPHA,BETA-UNSATURATED COMPOUNDS CATALYZED BY TRICHLOROGERMANE IN AQUEOUS-SOLUTION, Silicon, germanium, tin and lead compounds, 21(10), 1998, pp. 627-628
Authors:
SHEU JK
SU YK
CHANG SJ
CHI GC
LIN KB
LIU CC
CHIU CC
Citation: Jk. Sheu et al., ELECTRICAL DERIVATIVE CHARACTERISTICS OF ION-IMPLANTED ALGAINP GAINP MULTIQUANTUM-WELL LASERS/, Solid-state electronics, 42(10), 1998, pp. 1867-1869
Authors:
SHEU JK
SU YK
CHI GC
PONG BJ
CHEN CY
HUANG CN
CHEN WC
Citation: Jk. Sheu et al., PHOTOLUMINESCENCE SPECTROSCOPY OF MG-DOPED GAN, Journal of applied physics, 84(8), 1998, pp. 4590-4594
Authors:
SHEU JK
SU YK
CHI GC
CHEN WC
CHEN CY
HUANG CN
HONG JM
YU YC
WANG CW
LIN EK
Citation: Jk. Sheu et al., THE EFFECT OF THERMAL ANNEALING ON THE NI AU CONTACT OF P-TYPE GAN/, Journal of applied physics, 83(6), 1998, pp. 3172-3175
Authors:
PONG BJ
PAN CJ
TENG YC
CHI GC
LI WH
LEE KC
LEE CH
Citation: Bj. Pong et al., STRUCTURAL DEFECTS AND MICROSTRAIN IN GAN INDUCED BY MG ION-IMPLANTATION, Journal of applied physics, 83(11), 1998, pp. 5992-5996
Authors:
SHEU JK
SU YK
CHI GC
JOU MJ
CHANG CM
Citation: Jk. Sheu et al., EFFECTS OF THERMAL ANNEALING ON THE INDIUM TIN OXIDE SCHOTTKY CONTACTS OF N-GAN, Applied physics letters, 72(25), 1998, pp. 3317-3319
Authors:
ZHANG ZB
HE DY
CHI GC
CHEN RY
Citation: Zb. Zhang et al., SYNTHESIS OF SOME NEW GERMASESQUIOXIDES BY INTRAMOLECULAR CATALYTIC MANNICH-TYPE REACTIONS, Chinese journal of chemistry, 15(6), 1997, pp. 548-552
Authors:
LIN CF
CHENG HC
FENG MS
CHI GC
Citation: Cf. Lin et al., CHARACTERIZATION OF GAN EPITAXIAL LAYERS ON SIC SUBSTRATES WITH ALXGA1-XN BUFFER LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 25-28
Authors:
ZHANG ZB
HE DY
ZHANG CX
CHI GC
XU XH
CHEN RY
Citation: Zb. Zhang et al., SYNTHESIS OF NOVEL GERMANIUM COMPOUNDS BY INTRAMOLECULAR CATALYTICAL MANNICH-TYPE REACTION, Silicon, germanium, tin and lead compounds, 20(6), 1997, pp. 361-365
Authors:
ZHANG CX
ZHANG ZB
TANG CC
CHEN HM
CHI GC
CHEN RY
Citation: Cx. Zhang et al., SYNTHESIS OF GLYCEROPHOSPHOLIPID CONJUGAT ES OF URIDINE, Gaodeng xuexiao huaxue xuebao, 18(11), 1997, pp. 1809-1813
Authors:
ZHOU WD
ZHOU ZF
CHI GC
Citation: Wd. Zhou et al., INVESTIGATION OF COMMON-PATH INTERFERENCE PROFILOMETRY, Optical engineering, 36(11), 1997, pp. 3172-3175
Authors:
LIN CF
CHENG HC
CHI GC
FENG MS
GUO JD
HONG JMH
CHEN CY
Citation: Cf. Lin et al., GROWTH AND CHARACTERIZATIONS OF GAN ON SIC SUBSTRATES WITH BUFFER LAYERS, Journal of applied physics, 82(5), 1997, pp. 2378-2382
Authors:
LIN CF
CHENG HC
HUANG JA
FENG MS
GUO JD
CHI GC
Citation: Cf. Lin et al., MOBILITY ENHANCEMENTS IN ALGAN GAN/SIC WITH STAIR-STEP AND GRADED HETEROSTRUCTURES/, Applied physics letters, 70(19), 1997, pp. 2583-2585
Authors:
CHANG SJ
SHEU JK
SU YK
JOU MJ
CHI GC
Citation: Sj. Chang et al., ALGAINP GAP LIGHT-EMITTING-DIODES FABRICATED BY WAFER DIRECT BONDING TECHNOLOGY/, JPN J A P 1, 35(8), 1996, pp. 4199-4202
Authors:
CHEN RY
CHI GC
CHEN XR
Citation: Ry. Chen et al., SYNTHESIS OF 5-O-(N,N-BIS(2-CHLOROETHYL)P HOSPHORAMIDO)-2,3-O-ISOPROPYLIDENENUCLEOSIDES, Gaodeng xuexiao huaxue xuebao, 17(3), 1996, pp. 429-431
Authors:
LIN CF
CHI GC
FENG MS
GUO JD
TSANG JS
HONG JMH
Citation: Cf. Lin et al., THE DEPENDENCE OF THE ELECTRICAL CHARACTERISTICS OF THE GAN EPITAXIALLAYER ON THE THERMAL-TREATMENT OF THE GAN BUFFER LAYER, Applied physics letters, 68(26), 1996, pp. 3758-3760
Authors:
GUO JD
LIN CI
FENG MS
PAN FM
CHI GC
LEE CT
Citation: Jd. Guo et al., A BILAYER TI AG OHMIC CONTACT FOR HIGHLY DOPED N-TYPE GAN FILMS/, Applied physics letters, 68(2), 1996, pp. 235-237
Authors:
CHI GC
JUANG C
Citation: Gc. Chi et C. Juang, TOP SAWTOOTH GRATING FOR GAAS ALGAAS QUANTUM-WELL IR DETECTORS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 56-58
Authors:
CHI GC
JUANG C
Citation: Gc. Chi et C. Juang, GAAS ALGAAS QUANTUM-WELL INFRARED DETECTORS WITH AN INTEGRAL SILICON GRATING/, JPN J A P 1, 33(5A), 1994, pp. 2483-2486
Authors:
HSU JK
JUANG C
LEE BJ
CHI GC
Citation: Jk. Hsu et al., PHOTOLUMINESCENCE STUDIES OF INTERSTITIAL ZN IN INP DUE TO RAPID THERMAL ANNEALING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1416-1418
Authors:
CHI GC
Citation: Gc. Chi, AN E-BEAM EVAPORATED BOROSILICATE GLASS THIN-FILM AS AN ENCAPSULANT FOR ANNEALING BE-IMPLANT INP, Materials chemistry and physics, 39(1), 1994, pp. 69-71
Authors:
CHI GC
SU YK
JOU MJ
HUNG WC
Citation: Gc. Chi et al., WINDOW LAYER FOR CURRENT SPREADING IN ALGAINP LIGHT-EMITTING DIODE, Journal of applied physics, 76(5), 1994, pp. 2603-2611
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