Authors: CHIKYOW T KOGUCHI N

Citation: T. Chikyow et N. Koguchi, GAAS MICROCRYSTAL GROWTH ON SEMICONDUCTOR SURFACES BY LOW-ENERGY FOCUSED ION-BEAM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 2538-2542

Authors: CHIKYOW T KOGUCHI N SHIKANAI A

Citation: T. Chikyow et al., DIRECT GA DEPOSITION BY LOW-ENERGY FOCUSED ION-BEAM SYSTEM, Surface science, 386(1-3), 1997, pp. 254-258

Authors: YOSHIMOTO M SHIMOZONO K MAEDA T OHNISHI T KUMAGAI M CHIKYOW T ISHIYAMA O SHINOHARA M KOINUMA H

Citation: M. Yoshimoto et al., ROOM-TEMPERATURE EPITAXIAL-GROWTH OF CEO2 THIN-FILMS ON SI(111) SUBSTRATES FOR FABRICATION OF SHARP OXIDE SILICON INTERFACE/, JPN J A P 2, 34(6A), 1995, pp. 688-690

Authors: CHIKYOW T BEDAIR SM TYE L ELMASRY NA

Citation: T. Chikyow et al., REACTION AND REGROWTH CONTROL OF CEO2 ON SI(111) SURFACE FOR THE SILICON-ON-INSULATOR STRUCTURE, Applied physics letters, 65(8), 1994, pp. 1030-1032

Authors: TYE L ELMASRY NA CHIKYOW T MCLARTY P BEDAIR SM

Citation: L. Tye et al., ELECTRICAL CHARACTERISTICS OF EPITAXIAL CEO2 ON SI(111), Applied physics letters, 65(24), 1994, pp. 3081-3083