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Authors: CHINDALORE GL MCKEON JB MUDANAI S HARELAND SA SHIH WK WANG C TASCH AF MAZIAR CM

Citation: Gl. Chindalore et al., AN IMPROVED TECHNIQUE AND EXPERIMENTAL RESULTS FOR THE EXTRACTION OF ELECTRON AND HOLE MOBILITIES IN MOS ACCUMULATION LAYERS, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 502-511

Authors: HARELAND SA JALLEPALLI S SHIH WK WANG HH CHINDALORE GL TASCH AF MAZIAR CM

Citation: Sa. Hareland et al., A PHYSICALLY-BASED MODEL FOR QUANTIZATION EFFECTS IN HOLE INVERSION-LAYERS, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 179-186

Authors: SHENOY JN CHINDALORE GL MELLOCH MR COOPER JA PALMOUR JW IRVINE KG

Citation: Jn. Shenoy et al., CHARACTERIZATION AND OPTIMIZATION OF THE SIO2 SIC METAL-OXIDE-SEMICONDUCTOR INTERFACE/, Journal of electronic materials, 24(4), 1995, pp. 303-309