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Results: 1-15 |
Results: 15
TEMPERATURE STABILIZED 1.55 MU-M PHOTOLUMINESCENCE IN STRAINED GAXIN1-XAS QUANTUM-WIRE HETEROSTRUCTURES
Authors: WOHLERT DE MOY AM CHOU LJ CHENG KY HSIEH KC
Citation: De. Wohlert et al., TEMPERATURE STABILIZED 1.55 MU-M PHOTOLUMINESCENCE IN STRAINED GAXIN1-XAS QUANTUM-WIRE HETEROSTRUCTURES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1352-1355
STRUCTURAL-PROPERTIES OF GA2O3(GD2O3)-GAAS INTERFACES
Authors: HONG M MARCUS MA KWO J MANNAERTS JP SERGENT AM CHOU LJ HSIEH KC CHENG KY
Citation: M. Hong et al., STRUCTURAL-PROPERTIES OF GA2O3(GD2O3)-GAAS INTERFACES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1395-1397
IMPROVING THE AL-BEARING NATIVE-OXIDE GAAS INTERFACE FORMED BY WET OXIDATION WITH A THIN GAP BARRIER LAYER/
Authors: CHOU LJ HSIEH KC MOY A WOHLERT DE PICKRELL G CHENG KY
Citation: Lj. Chou et al., IMPROVING THE AL-BEARING NATIVE-OXIDE GAAS INTERFACE FORMED BY WET OXIDATION WITH A THIN GAP BARRIER LAYER/, Applied physics letters, 72(21), 1998, pp. 2722-2724
GROWTH OF GAINASP QUANTUM-WIRE HETEROSTRUCTURES USING THE STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS
Authors: MOY AM CHEN AC CHENG KY CHOU LJ HSIEH KC
Citation: Am. Moy et al., GROWTH OF GAINASP QUANTUM-WIRE HETEROSTRUCTURES USING THE STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS, Journal of crystal growth, 175, 1997, pp. 819-824
ALGAAS INGAAS/ALGAAS DOUBLE-PULSE DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES ON INGAAS SUBSTRATES/
Authors: HOKE WE LYMAN PS MOSCA JJ MCTAGGART RA LEMONIAS PJ BEAUDOIN RM TORABI A BONNER WA LENT B CHOU LJ HSIEH KC
Citation: We. Hoke et al., ALGAAS INGAAS/ALGAAS DOUBLE-PULSE DOPED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES ON INGAAS SUBSTRATES/, Journal of applied physics, 82(7), 1997, pp. 3576-3580
IMPROVED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES ON INGAAS SUBSTRATES
Authors: HOKE WE LYMAN PS MOSCA JJ HENDRIKS HT TORABI A BONNER WA LENT B CHOU LJ HSIEH KC
Citation: We. Hoke et al., IMPROVED PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES ON INGAAS SUBSTRATES, Journal of applied physics, 81(2), 1997, pp. 968-973
IN1-XALXP INALAS/INGAAS AND INALAS/INAS0.3P0.7 HIGH-ELECTRON-MOBILITYTRANSISTOR STRUCTURES GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/
Authors: HOKE WE LEMONIAS PJ WEIR DG HENDRIKS HT CHOU LJ HSIEH KC
Citation: We. Hoke et al., IN1-XALXP INALAS/INGAAS AND INALAS/INAS0.3P0.7 HIGH-ELECTRON-MOBILITYTRANSISTOR STRUCTURES GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2233-2235
QUANTUM-CONFINED STARK-EFFECT NEAR 1.5-MU-M WAVELENGTH IN INAS0.53P0.47 GAYIN1-YP STRAIN-BALANCED QUANTUM-WELLS/
Authors: MEI XB BI WG TU CW CHOU LJ HSIEH KC
Citation: Xb. Mei et al., QUANTUM-CONFINED STARK-EFFECT NEAR 1.5-MU-M WAVELENGTH IN INAS0.53P0.47 GAYIN1-YP STRAIN-BALANCED QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 2327-2330
VISIBLE WAVELENGTH (6470-ANGSTROM) GAXIN1-XP GAAS0.66P0.34 QUANTUM-WIRE HETEROSTRUCTURES/
Authors: MOY AM CHEN AC CHENG KY CHOU LJ HSIEH KC TU CW
Citation: Am. Moy et al., VISIBLE WAVELENGTH (6470-ANGSTROM) GAXIN1-XP GAAS0.66P0.34 QUANTUM-WIRE HETEROSTRUCTURES/, Journal of applied physics, 80(12), 1996, pp. 7124-7129
GROWTH OF GAXIN1-XAS QUANTUM-WIRE HETEROSTRUCTURES BY THE STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS
Authors: CHOU ST HSIEH KC CHENG KY CHOU LJ
Citation: St. Chou et al., GROWTH OF GAXIN1-XAS QUANTUM-WIRE HETEROSTRUCTURES BY THE STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 650-652
GAXIN1-XAS QUANTUM-WIRE HETEROSTRUCTURES FORMED BY STRAIN-INDUCED LATERAL-LAYER ORDERING
Authors: CHOU ST CHENG KY CHOU LJ HSIEH KC
Citation: St. Chou et al., GAXIN1-XAS QUANTUM-WIRE HETEROSTRUCTURES FORMED BY STRAIN-INDUCED LATERAL-LAYER ORDERING, Journal of applied physics, 78(10), 1995, pp. 6270-6275
EFFECT OF SUBSTRATE MISORIENTATION ON THE GROWTH OF GAXIN1-XP LATERALQUANTUM-WELLS
Authors: CHEN AC MOY AM CHOU LJ HSIEH KC CHENG KY
Citation: Ac. Chen et al., EFFECT OF SUBSTRATE MISORIENTATION ON THE GROWTH OF GAXIN1-XP LATERALQUANTUM-WELLS, Applied physics letters, 66(20), 1995, pp. 2694-2696
GAXIN1-XAS MULTIPLE-QUANTUM-WIRE LASERS GROWN BY THE STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS
Authors: CHOU ST CHENG KY CHOU LJ HSIEH KC
Citation: St. Chou et al., GAXIN1-XAS MULTIPLE-QUANTUM-WIRE LASERS GROWN BY THE STRAIN-INDUCED LATERAL-LAYER ORDERING PROCESS, Applied physics letters, 66(17), 1995, pp. 2220-2222
DEFECT ORDERING IN EPITAXIAL ALPHA-GAN(0001)
Authors: XIAO HZ LEE NE POWELL RC MA Z CHOU LJ ALLEN LH GREENE JE ROCKETT A
Citation: Hz. Xiao et al., DEFECT ORDERING IN EPITAXIAL ALPHA-GAN(0001), Journal of applied physics, 76(12), 1994, pp. 8195-8197
HYPERBARIC-OXYGEN AS PROPHYLAXIS OR TREATMENT FOR RADIATION MYELITIS
Authors: FELDMEIER JJ LANGE JD COX SD CHOU LJ CIARAVINO V
Citation: Jj. Feldmeier et al., HYPERBARIC-OXYGEN AS PROPHYLAXIS OR TREATMENT FOR RADIATION MYELITIS, Undersea & hyperbaric medicine, 20(3), 1993, pp. 249-255
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