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Results:
1-7
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Results: 7
Authors:
CHRETIEN O
YOUSIF MYA
NUR O
PATEL CJ
WILLANDER M
Citation: O. Chretien et al., ANALYSIS OF SI SI1-XGEX RETROGRADED DOUBLE-QUANTUM-WELL P-TYPE MOSFET/, Semiconductor science and technology, 13(9), 1998, pp. 999-1005
Authors:
YOUSIF MYA
NUR O
CHRETIEN O
FU Y
WILLANDER M
Citation: Mya. Yousif et al., THRESHOLD VOLTAGE AND CHARGE CONTROL CONSIDERATIONS IN DOUBLE-QUANTUM-WELL SI SI1-XGEX P-TYPE MOSFETS/, Solid-state electronics, 42(6), 1998, pp. 951-956
Authors:
CHRETIEN O
APETZ R
SOUIFI A
VESCAN L
Citation: O. Chretien et al., SI1-XGEX SI VALENCE-BAND OFFSET DETERMINATION USING CURRENT-VOLTAGE CHARACTERISTICS/, Thin solid films, 294(1-2), 1997, pp. 198-200
Authors:
CHRETIEN O
APETZ R
VESCAN L
Citation: O. Chretien et al., IDENTIFICATION OF DISLOCATIONS IN N-TYPE SI SI0.88GE0.12/SI HETEROSTRUCTURES BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Semiconductor science and technology, 11(12), 1996, pp. 1838-1842
Authors:
CHRETIEN O
APETZ R
VESCAN L
SOUIFI A
LUTH H
Citation: O. Chretien et al., CAPTURE, STORAGE, AND EMISSION OF HOLES IN SI SI1-XGEX/SI QWS FOR THEDETERMINATION OF THE VALENCE-BAND OFFSET BY DLTS/, Applied surface science, 102, 1996, pp. 237-241
Authors:
CHRETIEN O
SOUIFI A
APETZ R
VESCAN L
LUTH H
POPESCU C
Citation: O. Chretien et al., DETERMINATION OF VALENCE-BAND OFFSETS FROM SI SI1-XGEX/SI USING TEMPERATURE-DEPENDENT CURRENT-VOLTAGE CHARACTERISTICS/, Journal of applied physics, 79(5), 1996, pp. 2463-2466
Authors:
CHRETIEN O
APETZ R
VESCAN L
SOUIFI A
LUTH H
SCHMALZ K
KOULMANN JJ
Citation: O. Chretien et al., THERMAL HOLE EMISSION FROM SI SI(1-X)GEX/SI QUANTUM-WELLS BY DEEP-LEVEL TRANSIENT SPECTROSCOPY/, Journal of applied physics, 78(9), 1995, pp. 5439-5447
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