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Results: 1-25/37

Authors: COLLIER NJ CLEAVER JRA
Citation: Nj. Collier et Jra. Cleaver, NOVEL DUAL-GATE HEMT UTILIZING MULTIPLE SPLIT GATES, Microelectronic engineering, 42, 1998, pp. 457-460

Authors: KAUER M CLEAVER JRA BAUMBERG JJ HEBERLE AP
Citation: M. Kauer et al., FEMTOSECOND DYNAMICS IN SEMICONDUCTOR-LASERS - DARK PULSE FORMATION, Applied physics letters, 72(13), 1998, pp. 1626-1628

Authors: PIOTROWICZ PJA CLEAVER JRA
Citation: Pja. Piotrowicz et Jra. Cleaver, COULOMB-BLOCKADE IN A LATERALLY-CONFINED DOUBLE-BARRIER HETEROSTRUCTURE WITH A DOPED, WIDE WELL, JPN J A P 1, 36(11), 1997, pp. 6677-6681

Authors: BACKES SA HEBERLE AP CLEAVER JRA KOHLER K
Citation: Sa. Backes et al., SHAPE DEPENDENCE OF EMISSION FROM MICRODISK LASERS, Physica status solidi. b, Basic research, 204(1), 1997, pp. 581-583

Authors: COLLIER NJ CLEAVER JRA
Citation: Nj. Collier et Jra. Cleaver, A NOVEL DUAL-GATE HIGH-ELECTRON-MOBILITY TRANSISTOR USING A SPLIT-GATE STRUCTURE, Applied physics letters, 71(20), 1997, pp. 2958-2960

Authors: HOYLE PC CLEAVER JRA AHMED H
Citation: Pc. Hoyle et al., ELECTRON-BEAM-INDUCED DEPOSITION FROM W(CO)(6) AT 2 TO 20 KEV AND ITSAPPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 662-673

Authors: BAYNES NDB ALLAM J CLEAVER JRA
Citation: Ndb. Baynes et al., MODE-DISCRIMINATING ELECTROOPTIC SAMPLING FOR SEPARATING GUIDED AND UNGUIDED MODES ON COPLANAR WAVE-GUIDE, IEEE microwave and guided wave letters, 6(3), 1996, pp. 126-128

Authors: ALLAM J BAYNES ND CLEAVER JRA OGAWA K MISHIMA T OHBU I
Citation: J. Allam et al., MONOLITHICALLY-INTEGRATED OPTOELECTRONIC CIRCUIT FOR ULTRAFAST SAMPLING OF A DUAL-GATE FIELD-EFFECT TRANSISTOR, Optical and quantum electronics, 28(7), 1996, pp. 875-896

Authors: OGAWA K ALLAM J BAYNES ND CLEAVER JRA MISHIMA T OHBU I
Citation: K. Ogawa et al., ULTRAFAST CHARACTERIZATION OF IN-PLANE-GATE FIELD-EFFECT TRANSISTORS - PARASITICS IN LATERALLY GATED TRANSISTORS, Optical and quantum electronics, 28(7), 1996, pp. 907-917

Authors: HORNSEY RI MARSH AM CLEAVER JRA AHMED H
Citation: Ri. Hornsey et al., HIGH-CURRENT BALLISTIC TRANSPORT THROUGH VARIABLE-WIDTH CONSTRICTIONSIN A HIGH-MOBILITY 2-DIMENSIONAL ELECTRON-GAS (VOL 51, PG 7010, 1995), Physical review. B, Condensed matter, 54(11), 1996, pp. 8261-8261

Authors: ZHANG T CLEAVER JRA
Citation: T. Zhang et Jra. Cleaver, COMPUTATION OF OPTICAL-PROPERTIES OFF THE GAUSSIAN PLANE FOR ELECTRON-BEAM SYSTEMS, Optik, 103(4), 1996, pp. 151-166

Authors: FRANCIS GM KUIPERS L CLEAVER JRA PALMER RE
Citation: Gm. Francis et al., DIFFUSION-CONTROLLED GROWTH OF METALLIC NANOCLUSTERS AT SELECTED SURFACE SITES, Journal of applied physics, 79(6), 1996, pp. 2942-2947

Authors: PIOTROWICZ PJA ENGLAND JMC CLEAVER JRA STANLEY CR HOLLAND MC
Citation: Pja. Piotrowicz et al., SUBMICRON AND LOW-TEMPERATURE OHMIC CONTACTS ON DELTA-DOPED GAAS, Applied physics letters, 69(23), 1996, pp. 3528-3530

Authors: WANG D HOYLE PC CLEAVER JRA PORKOLAB GA MACDONALD NC
Citation: D. Wang et al., LITHOGRAPHY USING ELECTRON-BEAM-INDUCED ETCHING OF A CARBON-FILM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 1984-1987

Authors: HOYLE PC CLEAVER JRA AHMED H
Citation: Pc. Hoyle et al., FABRICATION OF FREESTANDING MICROTRANSDUCERS IN GAAS WITH AN ELECTRON-BEAM-INDUCED OXIDE MASK AND CL-2 ETCHING, Sensors and actuators. A, Physical, 50(1-2), 1995, pp. 31-37

Authors: HORNSEY RI MARSH AM CLEAVER JRA AHMED H
Citation: Ri. Hornsey et al., HIGH-CURRENT BALLISTIC TRANSPORT THROUGH VARIABLE-WIDTH CONSTRICTIONSIN A HIGH-MOBILITY 2-DIMENSIONAL ELECTRON-GAS, Physical review. B, Condensed matter, 51(11), 1995, pp. 7010-7016

Authors: BLAIKIE RJ CUMMING DRS CLEAVER JRA AHMED H NAKAZATO K
Citation: Rj. Blaikie et al., ELECTRON-TRANSPORT IN MULTIPROBE QUANTUM WIRES ANOMALOUS MAGNETORESISTANCE EFFECTS, Journal of applied physics, 78(1), 1995, pp. 330-343

Authors: OGAWA K ALLAM J BAYNES NDB CLEAVER JRA MISHIMA T OHBU I
Citation: K. Ogawa et al., ULTRAFAST CHARACTERIZATION OF AN INPLANE GATE TRANSISTOR INTEGRATED WITH PHOTOCONDUCTIVE SWITCHES, Applied physics letters, 66(10), 1995, pp. 1228-1230

Authors: HUSSAIN T CLEAVER JRA AHMED H
Citation: T. Hussain et al., APPLICATION OF FOCUSED ION-BEAM IMPLANTATION TO PRODUCE GALLIUM-ARSENIDE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH A NOVEL DOPING PROFILE, JPN J A P 1, 33(4A), 1994, pp. 2087-2091

Authors: HUSSAIN T CLEAVER JRA AHMED H
Citation: T. Hussain et al., FABRICATION AND PERFORMANCE OF GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH STEP-GRADED STRIPED FOCUSED ION-BEAM DOPING IN THE CHANNEL REGIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(1), 1994, pp. 158-160

Authors: HERBERT PAF BRADDELL J MACKENZIE S WOODHAM RG CLEAVER JRA
Citation: Paf. Herbert et al., DRY DEVELOPMENT LITHOGRAPHY BY A NOVEL ION-BEAM PROCESS, Microelectronic engineering, 23(1-4), 1994, pp. 263-266

Authors: PAUL DJ CLEAVER JRA AHMED H WHALL TE
Citation: Dj. Paul et al., COTUNNELING OF HOLES IN SILICON-BASED STRUCTURES, Physical review. B, Condensed matter, 49(23), 1994, pp. 16514-16517

Authors: GOODINGS CJ MIZUTA H CLEAVER JRA AHMED H
Citation: Cj. Goodings et al., ELECTRON CONFINEMENT IN VARIABLE-AREA RESONANT-TUNNELING DIODES USINGINPLANE IMPLANTED GATES, Surface science, 305(1-3), 1994, pp. 363-368

Authors: GOODINGS CJ MIZUTA H CLEAVER JRA AHMED H
Citation: Cj. Goodings et al., VARIABLE-AREA RESONANT-TUNNELING DIODES USING IMPLANTED INPLANE GATES, Journal of applied physics, 76(2), 1994, pp. 1276-1286

Authors: GOODINGS CJ MIZUTA H CLEAVER JRA
Citation: Cj. Goodings et al., ELECTRICAL STUDIES OF CHARGE BUILDUP AND PHONON-ASSISTED TUNNELING INDOUBLE-BARRIER MATERIALS WITH VERY THICK SPACER LAYERS, Journal of applied physics, 75(4), 1994, pp. 2291-2293
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