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Results: 1-11 |
Results: 11
DIRECT OBSERVATIONS OF THE STRAIN-LIMITED ISLAND GROWTH OF SN-DOPED GAAS(100)
Authors: DABIRAN AM SEUTTER SM COHEN PI
Citation: Am. Dabiran et al., DIRECT OBSERVATIONS OF THE STRAIN-LIMITED ISLAND GROWTH OF SN-DOPED GAAS(100), Surface review and letters, 5(3-4), 1998, pp. 783-795
N-LIMITED VERSUS GA-LIMITED GROWTH ON GAN(0001) BY MBE USING NH3
Authors: HELD R CRAWFORD DE JOHNSTON AM DABIRAN AM COHEN PI
Citation: R. Held et al., N-LIMITED VERSUS GA-LIMITED GROWTH ON GAN(0001) BY MBE USING NH3, Surface review and letters, 5(3-4), 1998, pp. 913-934
IN-SITU CONTROL OF GAN GROWTH BY MOLECULAR-BEAM EPITAXY
Authors: HELD R CRAWFORD DE JOHNSTON AM DABIRAN AM COHEN PI
Citation: R. Held et al., IN-SITU CONTROL OF GAN GROWTH BY MOLECULAR-BEAM EPITAXY, Journal of electronic materials, 26(3), 1997, pp. 272-280
NUCLEATION, GROWTH AND MAGNETIC-PROPERTIES OF EPITAXIAL FEAL FILMS ONALAS GAAS/
Authors: ISHAUG BE SEUTTER SM DABIRAN AM COHEN PI FARROW RFC WELLER D PARKIN SSP
Citation: Be. Ishaug et al., NUCLEATION, GROWTH AND MAGNETIC-PROPERTIES OF EPITAXIAL FEAL FILMS ONALAS GAAS/, Surface science, 380(1), 1997, pp. 75-82
SURFACE RECONSTRUCTIONS AND GROWTH MODE TRANSITIONS OF ALAS (100)
Authors: DABIRAN AM COHEN PI
Citation: Am. Dabiran et Pi. Cohen, SURFACE RECONSTRUCTIONS AND GROWTH MODE TRANSITIONS OF ALAS (100), Journal of crystal growth, 150(1-4), 1995, pp. 23-27
CHARACTERIZATION OF IRON-BASED PRECIPITATES IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: BENCH MW CARTER CB WANG F COHEN PI
Citation: Mw. Bench et al., CHARACTERIZATION OF IRON-BASED PRECIPITATES IN GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 66(18), 1995, pp. 2400-2402
ELECTRONIC-STRUCTURE, SURFACE-COMPOSITION AND LONG-RANGE ORDER IN GAN
Authors: HUNT RW VANZETTI L CASTRO T CHEN KM SORBA L COHEN PI GLADFELTER W VANHOVE JM KUZNIA JN KHAN MA FRANCIOSI A
Citation: Rw. Hunt et al., ELECTRONIC-STRUCTURE, SURFACE-COMPOSITION AND LONG-RANGE ORDER IN GAN, Physica. B, Condensed matter, 185(1-4), 1993, pp. 415-421
ULTRAHIGH-VACUUM METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH AND IN-SITU CHARACTERIZATION OF EPITAXIAL TIO2 FILMS
Authors: CHEN S MASON MG GYSLING HJ PAZPUJALT GR BLANTON TN CASTRO T CHEN KM FICTORIE CP GLADFELTER WL FRANCIOSI A COHEN PI EVANS JF
Citation: S. Chen et al., ULTRAHIGH-VACUUM METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH AND IN-SITU CHARACTERIZATION OF EPITAXIAL TIO2 FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(5), 1993, pp. 2419-2429
REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENTS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS AND INGAAS ON GAAS(111)
Authors: DABIRAN AM COHEN PI ANGELO JE GERBERICH WW
Citation: Am. Dabiran et al., REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION MEASUREMENTS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS AND INGAAS ON GAAS(111), Thin solid films, 231(1-2), 1993, pp. 1-7
AL AND GA DIFFUSION-BARRIERS IN MOLECULAR-BEAM EPITAXY
Authors: DABIRAN AM NAIR SK HE HD CHEN KM COHEN PI
Citation: Am. Dabiran et al., AL AND GA DIFFUSION-BARRIERS IN MOLECULAR-BEAM EPITAXY, Surface science, 298(2-3), 1993, pp. 384-391
SURFACE CHARACTERIZATION BY LEED, RHEED, REM, STM, AND HOLOGRAPHY - PROCEEDINGS OF THE UNITED-STATES-JAPAN SEMINAR ON SURFACE CHARACTERIZATION BY ELECTRON-DIFFRACTION, REFLECTION ELECTRON-MICROSCOPY, AND HOLOGRAPHY - KONA, HAWAII, 16-19 MARCH 1993 - PREFACE
Authors: COHEN PI ICHIMIYA A
Citation: Pi. Cohen et A. Ichimiya, SURFACE CHARACTERIZATION BY LEED, RHEED, REM, STM, AND HOLOGRAPHY - PROCEEDINGS OF THE UNITED-STATES-JAPAN SEMINAR ON SURFACE CHARACTERIZATION BY ELECTRON-DIFFRACTION, REFLECTION ELECTRON-MICROSCOPY, AND HOLOGRAPHY - KONA, HAWAII, 16-19 MARCH 1993 - PREFACE, Surface science, 298(2-3), 1993, pp. 180000003-180000003
Risultati: 1-11 |