Authors:
COLE MW
SENGUPTA S
STOWELL S
HUBBARD CW
NGO EH
Citation: Mw. Cole et al., THE INFLUENCE OF MICROSTRUCTURE ON THE ELECTRONIC-PROPERTIES OF THIN-FILMS OF BARIUM STRONTIUM TITANIUM-OXIDE COMPOSITES, Integrated ferroelectrics (Print), 21(1-4), 1998, pp. 469-473
Citation: Mw. Cole, CHANGES IN THE MICROSTRUCTURAL AND ELECTRICAL BEHAVIOR OF POLY-SI FILMS SUBJECTED TO ION-IMPLANTATION AND ANNEALING PROCESS MODIFICATIONS, Scanning, 20(1), 1998, pp. 41-44
Authors:
BOJAN MJ
COLE MW
JOHNSON JK
STEELE WA
WANG Q
Citation: Mj. Bojan et al., COMPUTER-SIMULATION STUDIES OF ADSORPTION OF SIMPLE GASES ON ALKALI-METAL SURFACES, Journal of low temperature physics, 110(1-2), 1998, pp. 653-658
Citation: M. Boninsegni et Mw. Cole, PATH-INTEGRAL STUDY OF THE HE-4 WETTING TRANSITION, Journal of low temperature physics, 110(1-2), 1998, pp. 685-689
Authors:
JONES KA
COLE MW
HAN WY
ECKART DW
HILTON KP
CROUCH MA
HUGHES BH
Citation: Ka. Jones et al., COMPARISON OF PDGETIPT AND NIGEAU OHMIC CONTACTS TO N-GAAS AND PDGETIPT AND TIPD CONTACTS TO P(-GAAS()), Journal of applied physics, 82(4), 1997, pp. 1723-1729
Citation: Mw. Cole et al., MATERIALS CHARACTERIZATION OF WSI CONTACTS TO N(-GAN AS A FUNCTION OFRAPID THERMAL ANNEALING TEMPERATURES()), Journal of the Electrochemical Society, 144(10), 1997, pp. 275-277
Citation: Mw. Cole et al., POST GROWTH RAPID THERMAL ANNEALING OF GAN - THE RELATIONSHIP BETWEENANNEALING TEMPERATURE, GAN CRYSTAL QUALITY, AND CONTACT-GAN INTERFACIAL STRUCTURE, Applied physics letters, 71(20), 1997, pp. 3004-3006
Authors:
REN F
LOTHIAN JR
KUO JM
HOBSON WS
LOPATA J
CABALLERO JA
PEARTON SJ
COLE MW
Citation: F. Ren et al., BCL3 N-2 DRY-ETCHING OF INP, INALP, AND INGAP, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(3), 1996, pp. 1758-1763
Authors:
YEH JJ
PFEFFER RL
COLE MW
OHRING M
YEHODA JE
Citation: Jj. Yeh et al., REACTIONS BETWEEN TUNGSTEN AND MOLYBDENUM THIN-FILMS AND POLYCRYSTALLINE DIAMOND SUBSTRATES, DIAMOND AND RELATED MATERIALS, 5(10), 1996, pp. 1195-1203
Authors:
COLE MW
HAN WY
CASAS LM
ECKART DW
MONAHAN T
JONES KA
Citation: Mw. Cole et al., THE MECHANISMS OF FORMATION OF OHMIC CONTACTS TO ALGAAS - A MICROSTRUCTURAL, ELEMENTAL DIFFUSION AND ELECTRICAL INVESTIGATION, Scanning, 18(5), 1996, pp. 379-384
Authors:
COLE MW
HAN WY
PFEFFER RL
ECKART DW
REN F
HOBSON WS
LOTHIAN JR
LOPATA J
CABALLERO JA
PEARTON SJ
Citation: Mw. Cole et al., A SURFACE MODIFICATION STUDY OF INGAP ETCHED WITH AN ELECTRON-CYCLOTRON-RESONANCE SOURCE AT VARIABLE MICROWAVE POWERS, Journal of applied physics, 79(6), 1996, pp. 3286-3289
Authors:
REN F
HOBSON WS
LOTHIAN JR
LOPATA J
PEARTON SJ
CABALLERO JA
COLE MW
Citation: F. Ren et al., EXTREMELY HIGH ETCH RATES OF IN-BASED III-V SEMICONDUCTORS IN BCL(3) N-2 BASED PLASMA/, Journal of the Electrochemical Society, 143(10), 1996, pp. 3394-3396
Authors:
DUBEY M
LAREAU RT
COLE MW
JONES KA
WEST LC
ROBERTS CW
PISCANI E
Citation: M. Dubey et al., OXYGEN CONTAMINATION OF LOW-TEMPERATURE ULTRAHIGH VACUUM-DEPOSITED GEFILMS ON GAAS, Applied physics letters, 69(4), 1996, pp. 556-558
Citation: F. Ancilotto et al., THE BINDING OF ALKALI ATOMS TO THE SURFACES OF LIQUID-HELIUM AND HYDROGEN, Zeitschrift fur Physik. B, Condensed matter, 98(3), 1995, pp. 323-329