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Results: 1-10 |
Results: 10
HIGHLY SELECTIVE 2-ION-CARRIER CHEMICALLY-MODIFIED FETS
Authors: CHANIOTAKIS NA MOSCHOU EA CONSTANTINIDIS G
Citation: Na. Chaniotakis et al., HIGHLY SELECTIVE 2-ION-CARRIER CHEMICALLY-MODIFIED FETS, Microelectronic engineering, 42, 1998, pp. 481-483
SCHOTTKY CONTACTS ON CF4 H-2 REACTIVE ION ETCHED BETA-SIC/
Authors: CONSTANTINIDIS G KUZMIC J MICHELAKIS K TSAGARAKI K
Citation: G. Constantinidis et al., SCHOTTKY CONTACTS ON CF4 H-2 REACTIVE ION ETCHED BETA-SIC/, Solid-state electronics, 42(2), 1998, pp. 253-256
SCHOTTKY CONTACT INVESTIGATION ON REACTIVE ION ETCHED 6H ALPHA-SIC
Authors: CONSTANTINIDIS G KUZMIK J MICHELAKIS K
Citation: G. Constantinidis et al., SCHOTTKY CONTACT INVESTIGATION ON REACTIVE ION ETCHED 6H ALPHA-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1459-1462
HIGH-TEMPERATURE OHMIC CONTACTS TO 3C-SIC GROWN ON SI SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION
Authors: CONSTANTINIDIS G KORNILIOS N ZEKENTES K STOEMENOS J DICIOCCIO L
Citation: G. Constantinidis et al., HIGH-TEMPERATURE OHMIC CONTACTS TO 3C-SIC GROWN ON SI SUBSTRATES BY CHEMICAL-VAPOR-DEPOSITION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 176-179
DIFFUSION OF GOLD IN 3C-SIC EPITAXIALLY GROWN ON SI - STRUCTURAL CHARACTERIZATION
Authors: KORNILIOS N CONSTANTINIDIS G KAYIAMBAKI M ZEKENTES K STOEMENOS J
Citation: N. Kornilios et al., DIFFUSION OF GOLD IN 3C-SIC EPITAXIALLY GROWN ON SI - STRUCTURAL CHARACTERIZATION, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 186-189
FAILURE MECHANISMS OF GAAS-MESFETS WITH CU REFRACTORY METALLIZED GATES/
Authors: FENG T DIMOULAS A CHRISTOU A CONSTANTINIDIS G HATZOPOULOS Z
Citation: T. Feng et al., FAILURE MECHANISMS OF GAAS-MESFETS WITH CU REFRACTORY METALLIZED GATES/, Microelectronics and reliability, 37(10-11), 1997, pp. 1699-1702
HIGH-TEMPERATURE STABLE IR-AL N-GAAS SCHOTTKY DIODES - EFFECT OF THE BARRIER HEIGHT CONTROLLING/
Authors: LALINSKY T OSVALD J MACHAJDIK D MOZOLOVA Z SISOLAK J CONSTANTINIDIS G KOBZEV AP
Citation: T. Lalinsky et al., HIGH-TEMPERATURE STABLE IR-AL N-GAAS SCHOTTKY DIODES - EFFECT OF THE BARRIER HEIGHT CONTROLLING/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 657-661
EFFECTS OF SI(100) TILTING ANGLE AND PRELAYER CONDITIONS ON GAAS SI HETEROSTRUCTURES/
Authors: GEORGAKILAS A PAPAVASSILIOU C CONSTANTINIDIS G TSAGARAKI K KRASNY H LOCHTERMANN E PANAYOTATOS P
Citation: A. Georgakilas et al., EFFECTS OF SI(100) TILTING ANGLE AND PRELAYER CONDITIONS ON GAAS SI HETEROSTRUCTURES/, Applied surface science, 102, 1996, pp. 67-72
INVESTIGATION OF SI-SUBSTRATE PREPARATION FOR GAAS-ON-SI MBE GROWTH
Authors: KAYAMBAKI M CALLEC R CONSTANTINIDIS G PAPAVASSILIOU C LOCHTERMANN E KRASNY H PAPADAKIS N PANAYOTATOS P GEORGAKILAS A
Citation: M. Kayambaki et al., INVESTIGATION OF SI-SUBSTRATE PREPARATION FOR GAAS-ON-SI MBE GROWTH, Journal of crystal growth, 157(1-4), 1995, pp. 300-303
ELECTRON TRAPS IN BETA-SIC GROWN BY CHEMICAL-VAPOR-DEPOSITION ON SILICON(100) SUBSTRATES
Authors: ZEKENTES K KAYIAMBAKI M CONSTANTINIDIS G
Citation: K. Zekentes et al., ELECTRON TRAPS IN BETA-SIC GROWN BY CHEMICAL-VAPOR-DEPOSITION ON SILICON(100) SUBSTRATES, Applied physics letters, 66(22), 1995, pp. 3015-3017
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