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Results:
1-13
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Results: 13
Authors:
SHANG NG
FANG RC
HAN S
LIAO Y
CUI JB
Citation: Ng. Shang et al., TRANSVERSE BIAS-ENHANCED NUCLEATION OF DIAMOND IN HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, MATERIALS RESEARCH INNOVATIONS, 2(2), 1998, pp. 79-82
Authors:
SHANG NG
FANG NC
HANG Y
LI JQ
HAN SJ
SHAO QY
CUI JB
XU CY
Citation: Ng. Shang et al., INVESTIGATION OF DIAMOND FILMS DEPOSITED ON LAALO3 SINGLE-CRYSTAL SUBSTRATES BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, Chinese Physics Letters, 15(2), 1998, pp. 146-148
Authors:
CUI JB
RISTEIN J
LEY L
Citation: Jb. Cui et al., ELECTRON-AFFINITY OF THE BARE AND HYDROGEN COVERED SINGLE-CRYSTAL DIAMOND(111) SURFACE, Physical review letters, 81(2), 1998, pp. 429-432
Authors:
CUI JB
AMTMANN K
RISTEIN J
LEY L
Citation: Jb. Cui et al., NONCONTACT TEMPERATURE-MEASUREMENTS OF DIAMOND BY RAMAN-SCATTERING SPECTROSCOPY, Journal of applied physics, 83(12), 1998, pp. 7929-7933
DISCHARGE INDUCED ENHANCEMENT OF DIAMOND NUCLEATION ON SI VIA HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION
Authors:
CUI JB
SHANG NG
FANG RC
Citation: Jb. Cui et al., DISCHARGE INDUCED ENHANCEMENT OF DIAMOND NUCLEATION ON SI VIA HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 83(11), 1998, pp. 6072-6075
Authors:
CUI JB
FANG RC
Citation: Jb. Cui et Rc. Fang, CHARACTERIZATION OF THE DIAMOND GROWTH-PROCESS USING OPTICAL-EMISSIONSPECTROSCOPY, Journal of applied physics, 81(6), 1997, pp. 2856-2862
Authors:
CHEN H
ZHANG JF
CUI JB
FANG RC
Citation: H. Chen et al., DEPOSITION OF DIAMOND FILM ON ALUMINUM NITRIDE CERAMICS AND THE STUDYOF THEIR THERMAL CONDUCTANCE, Chinese Physics Letters, 13(8), 1996, pp. 625-628
Authors:
CUI JB
FANG RC
Citation: Jb. Cui et Rc. Fang, EMISSION-SPECTROSCOPY FOR HOT-FILAMENT DIAMOND GROWTH-PROCESS WITH POSITIVE SUBSTRATE BIASING, Chinese Physics Letters, 13(3), 1996, pp. 192-195
Authors:
CUI JB
MA YR
ZHANG JF
CHEN H
FANG RC
Citation: Jb. Cui et al., GROWTH AND CHARACTERIZATION OF DIAMOND FILM ON ALUMINUM NITRIDE, Materials research bulletin, 31(7), 1996, pp. 781-785
Authors:
CUI JB
FANG RC
Citation: Jb. Cui et Rc. Fang, THE INFLUENCE OF BIAS ON GASEOUS COMPOSITION AND DIAMOND GROWTH IN A HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION PROCESS, Journal of physics. D, Applied physics, 29(11), 1996, pp. 2759-2762
Authors:
CUI JB
FANG RC
Citation: Jb. Cui et Rc. Fang, EVIDENCE OF THE ROLE OF POSITIVE BIAS IN DIAMOND GROWTH BY HOT-FILAMENT CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 69(23), 1996, pp. 3507-3509
Authors:
CUI JB
MA YR
FANG RC
Citation: Jb. Cui et al., SPECIES CHARACTERIZATION FOR A DIRECT-CURRENT-BIASED HOT-FILAMENT GROWTH OF DIAMOND USING SPATIAL RESOLVED OPTICAL-EMISSION SPECTROSCOPY, Applied physics letters, 69(21), 1996, pp. 3170-3172
Authors:
CUI JB
FANG RC
Citation: Jb. Cui et Rc. Fang, THERMAL-DIFFUSIVITY OF DIAMOND FILMS WITH SUBSTRATES, Chinese Physics Letters, 12(8), 1995, pp. 477-480
Risultati:
1-13
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