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Results: 1-23 |
Results: 23

Authors: Chun, JS Desjardins, P Lavoie, C Petrov, I Cabral, C Greene, JE
Citation: Js. Chun et al., Interfacial reaction pathways and kinetics during annealing of 111-textured Al-TiN bilayers: A synchrotron x-ray diffraction and transmission electron microscopy study, J VAC SCI A, 19(5), 2001, pp. 2207-2216

Authors: Chun, JS Carlsson, JRA Desjardins, P Bergstrom, DB Petrov, I Greene, JE Lavoie, C Cabral, C Hultman, L
Citation: Js. Chun et al., Synchrotron x-ray diffraction and transmission electron microscopy studiesof interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers, J VAC SCI A, 19(1), 2001, pp. 182-191

Authors: Cabral, C Lavoie, C Harper, JME Jordan-Sweet, J
Citation: C. Cabral et al., The use of in situ X-ray diffraction, optical scattering and resistance analysis techniques for evaluation of copper diffusion barriers in blanket films and damascene structures, THIN SOL FI, 397(1-2), 2001, pp. 194-202

Authors: Chun, JS Desjardins, P Petrov, I Greene, JE Lavoie, C Cabral, C
Citation: Js. Chun et al., Interfacial reaction pathways and kinetics during annealing of epitaxial Al/TiN(001) model diffusion barrier systems, THIN SOL FI, 391(1), 2001, pp. 69-80

Authors: d'Heurle, FM Zhang, SL Lavoie, C Gas, P Cabral, C Harper, JME
Citation: Fm. D'Heurle et al., Formation of C54TiSi(2): Effects of niobium additions on the apparent activation energy, J APPL PHYS, 90(12), 2001, pp. 6409-6415

Authors: Quintero, A Libera, M Cabral, C Lavoie, C Harper, JME
Citation: A. Quintero et al., Two-step codeposition process for enhanced C54-TiSi2 formation in the Ti-Si binary system, J APPL PHYS, 89(9), 2001, pp. 4879-4885

Authors: Chun, JS Desjardins, P Lavoie, C Shin, CS Cabral, C Petrov, I Greene, JE
Citation: Js. Chun et al., Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited Wurtzite-structure ALN(0001) blocking layer, J APPL PHYS, 89(12), 2001, pp. 7841-7845

Authors: Saenger, KL Cabral, C Duncombe, PR Grill, A Neumayer, DA
Citation: Kl. Saenger et al., Oxygen stoichiometry in PdOx and PdOx/Pt electrode layers during processing of ferroelectric and high-epsilon perovskites, J MATER RES, 15(4), 2000, pp. 961-966

Authors: Cabral, C Saenger, KL Kotecki, DE Harper, JME
Citation: C. Cabral et al., Optimization of Ta-Si-N thin films for use as oxidation-resistant diffusion barriers, J MATER RES, 15(1), 2000, pp. 194-198

Authors: Harper, JME Cabral, C Lavoie, C
Citation: Jme. Harper et al., Mechanisms for enhanced formation of the C54 phase of titanium silicide ultra-large-scale integration contacts, ANN R MATER, 30, 2000, pp. 523-543

Authors: Lavoie, C Cabral, C Harper, JME Tas, G Morath, CJ Stoner, RJ Maris, HJ
Citation: C. Lavoie et al., Detection of cobalt silicide phase formations by ultrafast optical measurements, THIN SOL FI, 374(1), 2000, pp. 42-48

Authors: Barmak, K Lucadamo, GA Cabral, C Lavoie, C Harper, JME
Citation: K. Barmak et al., Dissociation of dilute immiscible copper alloy thin films, J APPL PHYS, 87(5), 2000, pp. 2204-2214

Authors: Baniecki, JD Laibowitz, RB Shaw, TM Saenger, KL Duncombe, PR Cabral, C Kotecki, DE Shen, H Lian, J Ma, QY
Citation: Jd. Baniecki et al., Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors, J EUR CERAM, 19(6-7), 1999, pp. 1457-1461

Authors: Grill, A Cabral, C
Citation: A. Grill et C. Cabral, Al-Ta bilayer as an oxidation resistant barrier for electrode structures in high dielectric constant capacitors, J MATER RES, 14(4), 1999, pp. 1581-1588

Authors: Grill, A Jahnes, C Cabral, C
Citation: A. Grill et al., Layered TaSiN as an oxidation resistant electrically conductive barrier, J MATER RES, 14(4), 1999, pp. 1604-1609

Authors: Quintero, A Libera, M Cabral, C Lavoie, C Harper, JME
Citation: A. Quintero et al., Mechanisms for enhanced C54-TiSi2 formation in Ti-Ta alloy films on single-crystal Si, J MATER RES, 14(12), 1999, pp. 4690-4700

Authors: Engstrom, C Birch, J Hultman, L Lavoie, C Cabral, C Jordan-Sweet, JL Carlsson, JRA
Citation: C. Engstrom et al., Interdiffusion studies of single crystal TiN/NbN superlattice thin films, J VAC SCI A, 17(5), 1999, pp. 2920-2927

Authors: Lucadamo, G Barmak, K Hyun, S Cabral, C Lavoie, C
Citation: G. Lucadamo et al., Evidence of a two-stage reaction mechanism in sputter deposited Nb Al multilayer thin-films studied by in situ synchrotron X-ray diffraction, MATER LETT, 39(5), 1999, pp. 268-273

Authors: Harper, JME Cabral, C Andricacos, PC Gignac, L Noyan, IC Rodbell, KP Hu, CK
Citation: Jme. Harper et al., Mechanisms for microstructure evolution in electroplated copper thin filmsnear room temperature, J APPL PHYS, 86(5), 1999, pp. 2516-2525

Authors: Mouroux, A Roux, M Zhang, SL d'Heurle, FM Cabral, C Lavoie, C Harper, JME
Citation: A. Mouroux et al., Phase formation and resistivity in the ternary system Ti-Nb-Si, J APPL PHYS, 86(4), 1999, pp. 2323-2329

Authors: Saenger, KL Cabral, C Lavoie, C Rossnagel, SM
Citation: Kl. Saenger et al., Thermal stability and oxygen-loss characteristics of Pt(O) films prepared by reactive sputtering, J APPL PHYS, 86(11), 1999, pp. 6084-6087

Authors: Zhang, SL Lavoie, C Cabral, C Harper, JME d'Heurle, FM Jordan-Sweet, J
Citation: Sl. Zhang et al., In situ characterization of titanium silicide formation: The effect of Mo interlayer, temperature ramp-rate, and annealing atmosphere, J APPL PHYS, 85(5), 1999, pp. 2617-2626

Authors: Kotecki, DE Baniecki, JD Shen, H Laibowitz, RB Saenger, KL Lian, JJ Shaw, TM Athavale, SD Cabral, C Duncombe, PR Gutsche, M Kunkel, G Park, YJ Wang, YY Wise, R
Citation: De. Kotecki et al., (Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM, IBM J RES, 43(3), 1999, pp. 367-382
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