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Authors:
Chun, JS
Carlsson, JRA
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Petrov, I
Greene, JE
Lavoie, C
Cabral, C
Hultman, L
Citation: Js. Chun et al., Synchrotron x-ray diffraction and transmission electron microscopy studiesof interfacial reaction paths and kinetics during annealing of fully-002-textured Al/TiN bilayers, J VAC SCI A, 19(1), 2001, pp. 182-191
Authors:
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Citation: C. Cabral et al., The use of in situ X-ray diffraction, optical scattering and resistance analysis techniques for evaluation of copper diffusion barriers in blanket films and damascene structures, THIN SOL FI, 397(1-2), 2001, pp. 194-202
Authors:
Chun, JS
Desjardins, P
Petrov, I
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Lavoie, C
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Citation: Js. Chun et al., Interfacial reaction pathways and kinetics during annealing of epitaxial Al/TiN(001) model diffusion barrier systems, THIN SOL FI, 391(1), 2001, pp. 69-80
Authors:
d'Heurle, FM
Zhang, SL
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Harper, JME
Citation: Fm. D'Heurle et al., Formation of C54TiSi(2): Effects of niobium additions on the apparent activation energy, J APPL PHYS, 90(12), 2001, pp. 6409-6415
Authors:
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Harper, JME
Citation: A. Quintero et al., Two-step codeposition process for enhanced C54-TiSi2 formation in the Ti-Si binary system, J APPL PHYS, 89(9), 2001, pp. 4879-4885
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Citation: Js. Chun et al., Interfacial reactions in epitaxial Al/TiN(111) model diffusion barriers: Formation of an impervious self-limited Wurtzite-structure ALN(0001) blocking layer, J APPL PHYS, 89(12), 2001, pp. 7841-7845
Authors:
Saenger, KL
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Citation: Kl. Saenger et al., Oxygen stoichiometry in PdOx and PdOx/Pt electrode layers during processing of ferroelectric and high-epsilon perovskites, J MATER RES, 15(4), 2000, pp. 961-966
Authors:
Cabral, C
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Citation: C. Cabral et al., Optimization of Ta-Si-N thin films for use as oxidation-resistant diffusion barriers, J MATER RES, 15(1), 2000, pp. 194-198
Citation: Jme. Harper et al., Mechanisms for enhanced formation of the C54 phase of titanium silicide ultra-large-scale integration contacts, ANN R MATER, 30, 2000, pp. 523-543
Authors:
Baniecki, JD
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Citation: Jd. Baniecki et al., Effects of annealing conditions on charge loss mechanisms in MOCVD Ba0.7Sr0.3TiO3 thin film capacitors, J EUR CERAM, 19(6-7), 1999, pp. 1457-1461
Citation: A. Grill et C. Cabral, Al-Ta bilayer as an oxidation resistant barrier for electrode structures in high dielectric constant capacitors, J MATER RES, 14(4), 1999, pp. 1581-1588
Authors:
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Harper, JME
Citation: A. Quintero et al., Mechanisms for enhanced C54-TiSi2 formation in Ti-Ta alloy films on single-crystal Si, J MATER RES, 14(12), 1999, pp. 4690-4700
Authors:
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Lavoie, C
Citation: G. Lucadamo et al., Evidence of a two-stage reaction mechanism in sputter deposited Nb Al multilayer thin-films studied by in situ synchrotron X-ray diffraction, MATER LETT, 39(5), 1999, pp. 268-273
Authors:
Saenger, KL
Cabral, C
Lavoie, C
Rossnagel, SM
Citation: Kl. Saenger et al., Thermal stability and oxygen-loss characteristics of Pt(O) films prepared by reactive sputtering, J APPL PHYS, 86(11), 1999, pp. 6084-6087
Authors:
Zhang, SL
Lavoie, C
Cabral, C
Harper, JME
d'Heurle, FM
Jordan-Sweet, J
Citation: Sl. Zhang et al., In situ characterization of titanium silicide formation: The effect of Mo interlayer, temperature ramp-rate, and annealing atmosphere, J APPL PHYS, 85(5), 1999, pp. 2617-2626
Authors:
Kotecki, DE
Baniecki, JD
Shen, H
Laibowitz, RB
Saenger, KL
Lian, JJ
Shaw, TM
Athavale, SD
Cabral, C
Duncombe, PR
Gutsche, M
Kunkel, G
Park, YJ
Wang, YY
Wise, R
Citation: De. Kotecki et al., (Ba,Sr)TiO3 dielectrics for future stacked-capacitor DRAM, IBM J RES, 43(3), 1999, pp. 367-382