Authors:
Amimer, K
Georgakilas, A
Androulidaki, M
Tsagaraki, K
Pavelescu, M
Mikroulis, S
Constantinidis, G
Arbiol, J
Peiro, F
Cornet, A
Calamiotou, M
Kuzmik, J
Davydov, VY
Citation: K. Amimer et al., Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 304-308
Authors:
Bak-Misiuk, J
Dynowska, E
Misiuk, A
Calamiotou, M
Kozanecki, A
Domagala, J
Kuristyn, D
Glukhanyuk, W
Georgakilas, A
Trela, J
Adamczewska, J
Citation: J. Bak-misiuk et al., Effect of high temperature-pressure on GaAs layers grown on vicinal Si substrates, CRYST RES T, 36(8-10), 2001, pp. 997-1003
Authors:
Chrysanthakopoulos, N
Calamiotou, M
Lorut, F
Baruchel, J
Citation: N. Chrysanthakopoulos et al., Combined x-ray imaging and diffraction study of light-induced distortions in Fe : LiNbO3, J PHYS D, 34(10A), 2001, pp. A163-A167
Authors:
Calamiotou, M
Chrysanthakopoulos, N
Lioutas, C
Tsagaraki, K
Georgakilas, A
Citation: M. Calamiotou et al., Microstructural differences of the two possible orientations of GaAs on vicinal (001) Si substrates, J CRYST GR, 227, 2001, pp. 98-103
Authors:
Amimer, K
Georgakilas, A
Tsagaraki, K
Androulidaki, M
Cengher, D
Toth, L
Pecz, B
Calamiotou, M
Citation: K. Amimer et al., Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy, APPL PHYS L, 76(18), 2000, pp. 2580-2582
Authors:
Michelakis, C
Georgakilas, A
Androulidaki, M
Harteros, K
Deligeorgis, G
Calamiotou, M
Peiro, F
Becourt, N
Cornet, A
Halkias, G
Citation: C. Michelakis et al., Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates, MAT SCI E B, 66(1-3), 1999, pp. 181-184
Authors:
Georgakilas, A
Androulidaki, M
Tsagraki, K
Amimer, K
Constantinidis, G
Pelekanos, NT
Calamiotou, M
Czigany, Z
Pecz, B
Citation: A. Georgakilas et al., Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates, PHYS ST S-A, 176(1), 1999, pp. 525-528
Authors:
Georgakilas, A
Michelakis, K
Kayambaki, M
Tsagaraki, K
Macarona, E
Hatzopoulos, Z
Vila, A
Becourt, N
Peiro, F
Cornet, A
Chrysanthakopoulos, N
Calamiotou, M
Citation: A. Georgakilas et al., Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substrates, J CRYST GR, 202, 1999, pp. 248-251
Authors:
Calamiotou, M
Gantis, A
Palles, D
Lampakis, D
Liarokapis, E
Koufoudakis, A
Citation: M. Calamiotou et al., Phase separation and internal strains in the mixed La0.5R0.5Ba2Cu3Oy compounds (R = rare-earth element), PHYS REV B, 58(22), 1998, pp. 15238-15246
Authors:
Georgakilas, A
Tsagaraki, K
Harteros, K
Hatzopoulos, Z
Vila, A
Becourt, N
Peiro, F
Cornet, A
Chrysanthakopoulos, N
Calamiotou, M
Citation: A. Georgakilas et al., Correlation between the sign of strain and the surface morphology and defect structure of InAlAs grown on vicinal (111)BInP, THIN SOL FI, 336(1-2), 1998, pp. 218-221