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Results: 1-14 |
Results: 14

Authors: Amimer, K Georgakilas, A Androulidaki, M Tsagaraki, K Pavelescu, M Mikroulis, S Constantinidis, G Arbiol, J Peiro, F Cornet, A Calamiotou, M Kuzmik, J Davydov, VY
Citation: K. Amimer et al., Study of the correlation between GaN material properties and the growth conditions of radio frequency plasma-assisted molecular beam epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 304-308

Authors: Bak-Misiuk, J Dynowska, E Misiuk, A Calamiotou, M Kozanecki, A Domagala, J Kuristyn, D Glukhanyuk, W Georgakilas, A Trela, J Adamczewska, J
Citation: J. Bak-misiuk et al., Effect of high temperature-pressure on GaAs layers grown on vicinal Si substrates, CRYST RES T, 36(8-10), 2001, pp. 997-1003

Authors: Chrysanthakopoulos, N Calamiotou, M Lorut, F Baruchel, J
Citation: N. Chrysanthakopoulos et al., Combined x-ray imaging and diffraction study of light-induced distortions in Fe : LiNbO3, J PHYS D, 34(10A), 2001, pp. A163-A167

Authors: Calamiotou, M Chrysanthakopoulos, N Lioutas, C Tsagaraki, K Georgakilas, A
Citation: M. Calamiotou et al., Microstructural differences of the two possible orientations of GaAs on vicinal (001) Si substrates, J CRYST GR, 227, 2001, pp. 98-103

Authors: Kontos, AG Chrysanthakopoulos, N Calamiotou, M Kehagias, T Komninou, P Pohl, UW
Citation: Ag. Kontos et al., Structural properties of ZnSe epilayers on (111) GaAs, J APPL PHYS, 90(7), 2001, pp. 3301-3307

Authors: Amimer, K Georgakilas, A Tsagaraki, K Androulidaki, M Cengher, D Toth, L Pecz, B Calamiotou, M
Citation: K. Amimer et al., Single-crystal hexagonal and cubic GaN growth directly on vicinal (001) GaAs substrates by molecular-beam epitaxy, APPL PHYS L, 76(18), 2000, pp. 2580-2582

Authors: Guskos, N Likodimos, V Calamiotou, M Gantis, A Nabialek, A Szymczak, H Wabia, M
Citation: N. Guskos et al., Time evolution of copper defects in the mixed phase La0.5Gd0.5Ba2Cu3Oy, RADIAT EFF, 151(1-4), 1999, pp. 151-157

Authors: Vassilikou-Dova, A Macalik, B Kalogeras, IM Calamiotou, M Londos, CA Fytros, L
Citation: A. Vassilikou-dova et al., TSDC probe of anisotropic polarizability in fluorapatite single crystals, RADIAT EFF, 149(1-4), 1999, pp. 279-286

Authors: Michelakis, C Georgakilas, A Androulidaki, M Harteros, K Deligeorgis, G Calamiotou, M Peiro, F Becourt, N Cornet, A Halkias, G
Citation: C. Michelakis et al., Comparison of InGaAs/InAlAs electroabsorption modulator structures on (100) and (111) InP substrates, MAT SCI E B, 66(1-3), 1999, pp. 181-184

Authors: Georgakilas, A Androulidaki, M Tsagraki, K Amimer, K Constantinidis, G Pelekanos, NT Calamiotou, M Czigany, Z Pecz, B
Citation: A. Georgakilas et al., Influence of MBE growth temperature on the properties of cubic GaN grown directly on GaAs substrates, PHYS ST S-A, 176(1), 1999, pp. 525-528

Authors: Georgakilas, A Michelakis, K Kayambaki, M Tsagaraki, K Macarona, E Hatzopoulos, Z Vila, A Becourt, N Peiro, F Cornet, A Chrysanthakopoulos, N Calamiotou, M
Citation: A. Georgakilas et al., Material properties of InAlAs layers grown by MBE on vicinal (111)B InP substrates, J CRYST GR, 202, 1999, pp. 248-251

Authors: Kontos, AG Anastassakis, E Chrysanthakopoulos, N Calamiotou, M Pohl, UW
Citation: Ag. Kontos et al., Strain profiles in overcritical (001) ZnSe GaAs heteroepitaxial layers, J APPL PHYS, 86(1), 1999, pp. 412-417

Authors: Calamiotou, M Gantis, A Palles, D Lampakis, D Liarokapis, E Koufoudakis, A
Citation: M. Calamiotou et al., Phase separation and internal strains in the mixed La0.5R0.5Ba2Cu3Oy compounds (R = rare-earth element), PHYS REV B, 58(22), 1998, pp. 15238-15246

Authors: Georgakilas, A Tsagaraki, K Harteros, K Hatzopoulos, Z Vila, A Becourt, N Peiro, F Cornet, A Chrysanthakopoulos, N Calamiotou, M
Citation: A. Georgakilas et al., Correlation between the sign of strain and the surface morphology and defect structure of InAlAs grown on vicinal (111)BInP, THIN SOL FI, 336(1-2), 1998, pp. 218-221
Risultati: 1-14 |