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Results: 1-11 |
Results: 11
Extension velocities for level set based surface profile evolution
Authors: Richards, DF Bloomfield, MO Sen, S Cale, TS
Citation: Df. Richards et al., Extension velocities for level set based surface profile evolution, J VAC SCI A, 19(4), 2001, pp. 1630-1635
Mechanistic feature-scale profile simulation of SiO2 low-pressure chemicalvapor deposition by tetraethoxysilane pyrolysis
Authors: Labun, AH Moffat, HK Cale, TS
Citation: Ah. Labun et al., Mechanistic feature-scale profile simulation of SiO2 low-pressure chemicalvapor deposition by tetraethoxysilane pyrolysis, J VAC SCI B, 18(1), 2000, pp. 267-278
Modeling plasma processes in microelectronics
Authors: Richards, DF Bloomeld, MO Soukane, S Cale, TS
Citation: Df. Richards et al., Modeling plasma processes in microelectronics, VACUUM, 59(1), 2000, pp. 168-178
Process and materials modeling in IC fabrication - Preface
Authors: Cale, TS Kleijn, C
Citation: Ts. Cale et C. Kleijn, Process and materials modeling in IC fabrication - Preface, THIN SOL FI, 365(2), 2000, pp. 151-151
Topography simulation for the virtual wafer fab
Authors: Cale, TS Merchant, TP Borucki, LJ Labun, AH
Citation: Ts. Cale et al., Topography simulation for the virtual wafer fab, THIN SOL FI, 365(2), 2000, pp. 152-175
Multiple scale integrated modeling of deposition processes
Authors: Merchant, TP Gobbert, MK Cale, TS Borucki, LJ
Citation: Tp. Merchant et al., Multiple scale integrated modeling of deposition processes, THIN SOL FI, 365(2), 2000, pp. 368-375
Programmed rate chemical vapor deposition protocols
Authors: Yang, D Kristof, JJ Jonnalagadda, R Rogers, BR Hillman, JT Foster, RF Cale, TS
Citation: D. Yang et al., Programmed rate chemical vapor deposition protocols, J ELCHEM SO, 147(2), 2000, pp. 723-730
Microelectronics and nanometer structures - Processing, measurement, and phenomena - Preface
Authors: Givens, JH Cale, TS
Citation: Jh. Givens et Ts. Cale, Microelectronics and nanometer structures - Processing, measurement, and phenomena - Preface, J VAC SCI B, 17(5), 1999, pp. 2196-2196
Programmed substrate temperature ramping to increase nucleation density and decrease surface roughness during metalorganic chemical vapor deposition of aluminum
Authors: Jonnalagadda, R Yang, D Rogers, BR Hillman, JT Foster, RF Cale, TS
Citation: R. Jonnalagadda et al., Programmed substrate temperature ramping to increase nucleation density and decrease surface roughness during metalorganic chemical vapor deposition of aluminum, J MATER RES, 14(5), 1999, pp. 1982-1989
Effects of carrier film physical properties on WCMP
Authors: Wang, D Zutshi, A Bibby, T Beaudoin, SP Cale, TS
Citation: D. Wang et al., Effects of carrier film physical properties on WCMP, THIN SOL FI, 345(2), 1999, pp. 278-283
Deposition and etch processes: continuum film evolution in microelectronics
Authors: Cale, TS Rogers, BR Merchant, TP Borucki, LJ
Citation: Ts. Cale et al., Deposition and etch processes: continuum film evolution in microelectronics, COMP MAT SC, 12(4), 1998, pp. 333-353
Risultati: 1-11 |