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Results: 1-10 |
Results: 10
Electron transport in ultrathin double-gate SOI devices
Authors: Gamiz, F Roldan, JB Lopez-Villanueva, JA Jimenez-Molinos, F Carceller, JE
Citation: F. Gamiz et al., Electron transport in ultrathin double-gate SOI devices, MICROEL ENG, 59(1-4), 2001, pp. 423-427
Electron transport in silicon-on-insulator devices
Authors: Gamiz, F Roldan, JB Lopez-Villanueva, JA Cartujo-Cassinello, P Carceller, JE Cartujo, P Jimenez-Molinos, F
Citation: F. Gamiz et al., Electron transport in silicon-on-insulator devices, SOL ST ELEC, 45(4), 2001, pp. 613-620
Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects
Authors: Rodriguez, S Lopez-Villanueva, JA Cartujo, P Carceller, JE
Citation: S. Rodriguez et al., Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects, SEMIC SCI T, 15(2), 2000, pp. 85-90
Optimum design in a JFET for minimum generation-recombination noise
Authors: Godoy, A Jimenez-Tejada, JA Palma, A Carceller, JE
Citation: A. Godoy et al., Optimum design in a JFET for minimum generation-recombination noise, MICROEL REL, 40(11), 2000, pp. 1965-1968
Influence of technological parameters on the behavior of the hole effective mass in SiGe structures
Authors: Rodriguez, S Gamiz, F Palma, A Cartujo, P Carceller, JE
Citation: S. Rodriguez et al., Influence of technological parameters on the behavior of the hole effective mass in SiGe structures, J APPL PHYS, 88(4), 2000, pp. 1978-1982
Experimental determination of the effective mobility in NMOSFETs: a comparative study
Authors: Banqueri, J Lopez-Villanueva, JA Cartujo-Cassinello, P Rodriguez, S Carceller, JE
Citation: J. Banqueri et al., Experimental determination of the effective mobility in NMOSFETs: a comparative study, SOL ST ELEC, 43(4), 1999, pp. 701-707
Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers
Authors: Gamiz, F Roldan, JB Lopez-Villanueva, JA Cartujo-Cassinello, P Carceller, JE
Citation: F. Gamiz et al., Surface roughness at the Si-SiO2 interfaces in fully depleted silicon-on-insulator inversion layers, J APPL PHYS, 86(12), 1999, pp. 6854-6863
Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers
Authors: Gamiz, F Roldan, JB Cartujo-Cassinello, P Carceller, JE Lopez-Villanueva, JA Rodriguez, S
Citation: F. Gamiz et al., Electron mobility in extremely thin single-gate silicon-on-insulator inversion layers, J APPL PHYS, 86(11), 1999, pp. 6269-6275
Hole confinement and energy subbands in a silicon inversion layer using the effective mass theory
Authors: Rodriguez, S Lopez-Villanueva, JA Melchor, I Carceller, JE
Citation: S. Rodriguez et al., Hole confinement and energy subbands in a silicon inversion layer using the effective mass theory, J APPL PHYS, 86(1), 1999, pp. 438-444
A computational study of the strained-Si MOSFET: a possible alternative for the next century electronics industry
Authors: Roldan, JB Gamiz, F Lopez-Villanueva, JA Carceller, JE Cartujo, P
Citation: Jb. Roldan et al., A computational study of the strained-Si MOSFET: a possible alternative for the next century electronics industry, COMP PHYS C, 122, 1999, pp. 547-549
Risultati: 1-10 |