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Results: 1-25/28
Authors:
Zhu, SY
Detavernier, C
Van Meirhaeghe, RL
Cardon, F
Blondeel, A
Clauws, P
Ru, GP
Li, BZ
Citation: Sy. Zhu et al., Electrical characterization of Ar-ion-bombardment-induced damage in Au/Si and PtSi/Si Schottky barrier contacts, SEMIC SCI T, 16(2), 2001, pp. 83-90
Authors:
Steegen, A
Detavernier, C
Lauwers, A
Maex, K
Van Meirhaeghe, RL
Cardon, F
Citation: A. Steegen et al., Orientation-dependent stress build-up during the formation of epitaxial CoSi2, MICROEL ENG, 55(1-4), 2001, pp. 145-150
Authors:
Detavernier, C
Van Meirhaeghe, RL
Cardon, F
Maex, K
Citation: C. Detavernier et al., CoSi2 formation through SiO2, THIN SOL FI, 386(1), 2001, pp. 19-26
Authors:
Detavernier, C
Van Meirhaeghe, TRL
Cardon, F
Maex, K
Citation: C. Detavernier et al., CoSi2 nucleation in the presence of Ge, THIN SOL FI, 384(2), 2001, pp. 243-250
Authors:
Detavernier, C
Van Meirhaeghe, RL
Cardon, F
Maex, K
Bender, H
Brijs, B
Vandervorst, W
Citation: C. Detavernier et al., Formation of epitaxial CoSi2 by a Cr or Mo interlayer: Comparison with a Ti interlayer, J APPL PHYS, 89(4), 2001, pp. 2146-2150
Authors:
Ru, GP
Qu, XP
Zhu, SY
Li, BZ
Detavernier, C
Van Meirhaeghe, RL
Cardon, F
Donaton, RA
Maex, K
Citation: Gp. Ru et al., Ion-bombardment effects on PtSi/n-Si Schottky contacts studied by ballistic electron emission microscopy, J VAC SCI B, 18(4), 2000, pp. 1942-1948
Authors:
Wauters, D
Poelman, D
Van Meirhaeghe, RL
Cardon, F
Citation: D. Wauters et al., Photoluminescent, electroluminescent and structural properties of CaS : Cuand CaS : Cu, Ag thin films, J PHYS-COND, 12(16), 2000, pp. 3901-3909
Authors:
Detavernier, C
De Gryse, R
Van Meirhaeghe, RL
Cardon, F
Ru, GP
Qu, XP
Li, BZ
Donaton, RA
Maex, K
Citation: C. Detavernier et al., Nondestructive characterization of thin silicides using x-ray reflectivity, J VAC SCI A, 18(2), 2000, pp. 470-476
Authors:
Zhu, SY
Detavernier, C
Van Meirhaeghe, RL
Qu, XP
Ru, GP
Cardon, F
Li, BZ
Citation: Sy. Zhu et al., A BEEM study of Schottky barrier height distributions of ultrathin CoSi2/n-Si(100) formed by solid phase epitaxy, SEMIC SCI T, 15(4), 2000, pp. 349-356
Authors:
Detavernier, C
Van Meirhaeghe, RL
Cardon, F
Donaton, RA
Maex, K
Citation: C. Detavernier et al., The influence of Ti capping layers on CoSi2 formation, MICROEL ENG, 50(1-4), 2000, pp. 125-132
Authors:
Detavernier, C
Van Meirhaeghe, RL
Cardon, F
Maex, K
Citation: C. Detavernier et al., Influence of mixing entropy on the nucleation of CoSi2, PHYS REV B, 62(18), 2000, pp. 12045-12051
Authors:
Zhu, SY
Van Meirhaeghe, RL
Detavernier, C
Cardon, F
Ru, GP
Qu, XP
Li, BZ
Citation: Sy. Zhu et al., Barrier height inhomogeneities of epitaxial CoSi2 Schottky contacts on n-Si (100) and (111), SOL ST ELEC, 44(4), 2000, pp. 663-671
Authors:
Zhu, SY
Qu, XP
Van Meirhaeghe, RL
Detavernier, C
Ru, GP
Cardon, F
Li, BZ
Citation: Sy. Zhu et al., Ballistic electron emission microscopy studies of the temperature dependence of Schottky barrier height distribution in CoSi2/n-Si(100) diodes formedby solid phase reaction, SOL ST ELEC, 44(12), 2000, pp. 2217-2223
Authors:
Zhu, SY
Detavernier, C
Van Meirhaeghe, RL
Cardon, F
Ru, GP
Qu, XP
Li, BZ
Citation: Sy. Zhu et al., Electrical characteristics of CoSi2/n-Si(100) Schottky barrier contacts formed by solid state reaction, SOL ST ELEC, 44(10), 2000, pp. 1807-1818
Authors:
Poelman, D
Wauters, D
Van Meirhaeghe, RL
Cardon, F
Citation: D. Poelman et al., Photoluminescence of SrS : Cu,Ag and SrS1-xSex : Cu,Ag thin films, SOL ST COMM, 113(7), 2000, pp. 405-410
Authors:
Hua, JP
Callens, F
Cardon, F
De Meyer, H
Vandenbroucke, D
Citation: Jp. Hua et al., Shallow electron traps induced by [Ru(CN)(6)](4-) in AgCl microcrystals: acomputer simulation study of transient microwave photoconductivity, J PHYS D, 33(5), 2000, pp. 564-573
Authors:
Hua, JP
Callens, F
Cardon, F
Vandenbroucke, D
Citation: Jp. Hua et al., Determination of capture cross sections and trap depths of dominant centres in AgCl microcrystals doped with [Ru(CN)(6)](4-) complexes, J PHYS D, 33(5), 2000, pp. 574-583
Authors:
Wauters, D
Poelman, D
Van Meirhaeghe, RL
Cardon, F
Citation: D. Wauters et al., Optical characterisation of SrS : Cu and SrS : Cu,Ag EL devices, J LUMINESC, 91(1-2), 2000, pp. 1-6
Authors:
Detavernier, C
Van Meirhaeghe, RL
Cardon, F
Maex, K
Bender, H
Zhu, SY
Citation: C. Detavernier et al., CoSi2 formation in the Ti/Co/SiO2/Si system, J APPL PHYS, 88(1), 2000, pp. 133-140
Authors:
Detavernier, C
Van Meirhaeghe, RL
Cardon, F
Maex, K
Vandervorst, W
Brijs, B
Citation: C. Detavernier et al., Influence of Ti on CoSi2 nucleation, APPL PHYS L, 77(20), 2000, pp. 3170-3172
Authors:
Hua, JP
Callens, F
Cardon, F
Vandenbroucke, D
Citation: Jp. Hua et al., Transient photoconductivity study of shallow electron traps in [Ru(CN)(6)](4-) doped AgCl microcrystals: effects of doping concentration and position, IMAGING S J, 47(2), 1999, pp. 71-79
Authors:
Vanmaekelbergh, D
van de Lagemaat, J
Schropp, REI
Cardon, F
Citation: D. Vanmaekelbergh et al., Thermally enhanced quantum efficiency in hydrogenated amorphous silicon p-i-n photodiodes studied by intensity-modulated photocurrent spectroscopy, PHIL MAG B, 79(2), 1999, pp. 291-318
Authors:
Vdovenkova, T
Strikha, V
Cardon, F
Van Meirhaeghe, RL
Vanalme, G
Citation: T. Vdovenkova et al., BEEM studies of the PtSi/Si(100) interface electronic structure, J ELEC SPEC, 105(1), 1999, pp. 15-19
Authors:
Vanalme, GM
Goubert, L
Van Meirhaeghe, RL
Cardon, F
Van Daele, P
Citation: Gm. Vanalme et al., A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments, SEMIC SCI T, 14(9), 1999, pp. 871-877
Authors:
Poelman, D
Wauters, D
Van Meirhaeghe, RL
Cardon, F
Citation: D. Poelman et al., Intrinsic optical and structural properties of SrS thin films, THIN SOL FI, 350(1-2), 1999, pp. 67-71