Authors: Tzeng, PJ Wu, BF Chang-Liao, KS

Citation: Pj. Tzeng et al., Suppression of plasma charging damage in sub-micron metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate oxynitride by two-step nitridation, JPN J A P 2, 40(6A), 2001, pp. L536-L538

Authors: Lee, JH Feng, WS Juang, TC Chang-Liao, KS

Citation: Jh. Lee et al., Electric property improvement and boron penetration suppression in metal-oxidase-Si capacitors by amorphous-Si gate electrode and two-step nitridation, J VAC SCI B, 19(3), 2001, pp. 794-799

Authors: Tzeng, PJ Chang, YY Chang-Liao, KS

Citation: Pj. Tzeng et al., Plasma charging damage on MOS devices with gate insulator of high-dielectric constant material, IEEE ELEC D, 22(11), 2001, pp. 527-529

Authors: Chang-Liao, KS Yi, NK Huang, JG

Citation: Ks. Chang-liao et al., Neutron intrinsic gettering on electrical property of gate oxynitride in metal-oxide-Si capacitor, APPL PHYS L, 76(19), 2000, pp. 2770-2772

Authors: Chang-Liao, KS Ku, JM

Citation: Ks. Chang-liao et Jm. Ku, Improvement of oxynitride reliability by two-step N2O nitridation, SOL ST ELEC, 43(11), 1999, pp. 2057-2060

Authors: Chang-Liao, KS Chang, HM

Citation: Ks. Chang-liao et Hm. Chang, Extraction method of threshold voltage and transconductance to assess radiation effects on MOS circuits, J NUC SCI T, 36(7), 1999, pp. 630-632