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Results: 1-9 |
Results: 9
Initial stage of GaN growth and its implication to defect formation in films - art. no. 033304
Authors: Cheung, SH Zheng, LX Xie, MH Tong, SY Ohtani, N
Citation: Sh. Cheung et al., Initial stage of GaN growth and its implication to defect formation in films - art. no. 033304, PHYS REV B, 6403(3), 2001, pp. 3304
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
Authors: Zheng, LX Xie, MH Xu, SJ Cheung, SH Tong, SY
Citation: Lx. Zheng et al., Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 376-380
Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy
Authors: Xie, MH Cheung, SH Zheng, LX Ng, YF Wu, HS Ohtani, N Tong, SY
Citation: Mh. Xie et al., Step bunching of vicinal GaN(0001) surfaces during molecular beam epitaxy, PHYS REV B, 61(15), 2000, pp. 9983-9985
Surface morphology of GaN: Flat versus vicinal surfaces
Authors: Xie, MH Seutter, SM Zheng, LX Cheung, SH Ng, YF Wu, HS Tong, SY
Citation: Mh. Xie et al., Surface morphology of GaN: Flat versus vicinal surfaces, MRS I J N S, 5, 2000, pp. NIL_155-NIL_160
Observation of "ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy
Authors: Zheng, LX Xie, MH Seutter, SM Cheung, SH Tong, SY
Citation: Lx. Zheng et al., Observation of "ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy, PHYS REV L, 85(11), 2000, pp. 2352-2355
Synthesis, characterization and crystal structures of some tungsten and triosmium carbonyl complexes with monopyridyl and dipyridyl azo ligands
Authors: Wong, WY Cheung, SH Lee, SM Leung, SY
Citation: Wy. Wong et al., Synthesis, characterization and crystal structures of some tungsten and triosmium carbonyl complexes with monopyridyl and dipyridyl azo ligands, J ORGMET CH, 596(1-2), 2000, pp. 36-45
Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy
Authors: Xie, MH Zheng, LX Cheung, SH Ng, YF Wu, HS Tong, SY Ohtani, N
Citation: Mh. Xie et al., Reduction of threading defects in GaN grown on vicinal SiC(0001) by molecular-beam epitaxy, APPL PHYS L, 77(8), 2000, pp. 1105-1107
Return transmission among stock markets of Greater China
Authors: Chan, WS Lo, HWC Cheung, SH
Citation: Ws. Chan et al., Return transmission among stock markets of Greater China, MATH COMP S, 48(4-6), 1999, pp. 511-518
On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy
Authors: Beling, CD LiMing, W Shan, YY Cheung, SH Fung, S Panda, BK Seitsonen, AP
Citation: Cd. Beling et al., On the possible identification of defects using the autocorrelation function approach in double Doppler broadening of annihilation radiation spectroscopy, J PHYS-COND, 10(46), 1998, pp. 10475-10492
Risultati: 1-9 |