Authors:
Chew, K",Rusli,"Yu, MB
Yoon, SF
Ligatchev, V
Ahn, J
Citation: Mb. Chew, K",rusli,"yu et al., Density of gap states in amorphous hydrogenated silicon carbide determinedusing high-frequency capacitance-voltage measurement technique, DIAM RELAT, 10(3-7), 2001, pp. 1273-1277
Authors:
Cui, J",Rusli,"Yoon, SF
Yu, MB
Chew, K
Ahn, J
Zhang, Q
Teo, EJ
Osipowicz, T
Watt, F
Citation: Sf. Cui, J",rusli,"yoon et al., Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition, J APPL PHYS, 89(5), 2001, pp. 2699-2705
Authors:
Cui, J",Rusli,"Yoon, SF
Teo, EJ
Yu, MB
Chew, K
Ahn, J
Zhang, Q
Osipowicz, T
Watt, F
Citation: Sf. Cui, J",rusli,"yoon et al., Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide, J APPL PHYS, 89(11), 2001, pp. 6153-6158
Authors:
Yu, MB",Rusli,"Yoon, SF
Xu, SJ
Chew, K
Cui, J
Ahn, J
Zhang, Q
Citation: Sf. Yu, Mb",rusli,"yoon et al., Hydrogenated nanocrystalline silicon carbide films synthesized by ECR-CVD and its intense visible photoluminescence at room temperature, THIN SOL FI, 377, 2000, pp. 177-181
Authors:
Yu, MB",Rusli,"Yoon, SF
Chen, ZM
Ahn, J
Zhang, Q
Chew, K
Cui, J
Citation: Sf. Yu, Mb",rusli,"yoon et al., Deposition of nanocrystalline cubic silicon carbide films using the hot-filament chemical-vapor-deposition method, J APPL PHYS, 87(11), 2000, pp. 8155-8158