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Citation: Vl. Alperovich et al., Epitaxial growth, electronic properties, and photocathode applications of strained pseudomorphic InGaAsP/GaAs layers, SEMICONDUCT, 35(9), 2001, pp. 1054-1062

Authors: Alperovich, VL Bolkhovityanov, YB Chikichev, SI Jaroshevich, AS Paulish, AG Terekhov, AS

Citation: Vl. Alperovich et al., Strained pseudomorphic InGaAsP/GaAs layers: Epitaxial growth, electronic properties and photocathode applications, OPTOEL PROP, 9, 2000, pp. 651-726

Authors: Tereshchenko, OE Chikichev, SI Terekhov, AS

Citation: Oe. Tereshchenko et al., Composition and structure of HCl-isopropanol treated and vacuum annealed GaAs(100) surfaces, J VAC SCI A, 17(5), 1999, pp. 2655-2662

Authors: Tereshchenko, OE Chikichev, SI Terekhov, AS

Citation: Oe. Tereshchenko et al., Atomic structure and electronic properties of HCl-isopropanol treated and vacuum annealed GaAs(100) surface, APPL SURF S, 142(1-4), 1999, pp. 75-80