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Results: 1-7 |
Results: 7
High performance InP high electron mobility transistors by valved phosphorus cracker
Authors: Chin, TP Chen, YC Barsky, M Wojtowicz, M Grundbacher, R Lai, R Streit, DC Block, TR
Citation: Tp. Chin et al., High performance InP high electron mobility transistors by valved phosphorus cracker, J VAC SCI B, 18(3), 2000, pp. 1642-1644
Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers
Authors: Goorsky, MS Sandhu, R Hsing, R Naidenkova, M Wojtowicz, M Chin, TP Block, TR Streit, DC
Citation: Ms. Goorsky et al., Strain compensation in In0.75Ga0.25As/InP pseudomorphic high electron mobility transistors using strained InAlAs buffers, J VAC SCI B, 18(3), 2000, pp. 1658-1662
InP-collector double-heterojunction bipolar transistors by valved phosphorus cracker
Authors: Chin, TP Gutierrez-Aitken, AL Cowles, J Kaneshiro, EN Han, AC Block, TR Oki, AK Streit, DC
Citation: Tp. Chin et al., InP-collector double-heterojunction bipolar transistors by valved phosphorus cracker, J VAC SCI B, 17(3), 1999, pp. 1136-1138
Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs
Authors: Sandhu, RS Bhasin, G Moore, CD U'Ren, GD Goorsky, MS Chin, TP Wojtowicz, M Block, TR Streit, DC
Citation: Rs. Sandhu et al., Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs, J VAC SCI B, 17(3), 1999, pp. 1163-1166
InPHEMT's with 39% PAE and 162-mW output power at V-band
Authors: Grundbacher, R Nishimoto, M Chin, TP Chen, YC Lai, R Yamauchi, D Schreyer, G Block, T Medvedev, V Streit, D
Citation: R. Grundbacher et al., InPHEMT's with 39% PAE and 162-mW output power at V-band, IEEE MICR G, 9(6), 1999, pp. 236-238
Pseudomorphic InPHEMT's with dry-etched source vias having 190 mW output power and 40% PAE at V-band
Authors: Grundbacher, R Lai, R Nishimoto, M Chin, TP Chen, YC Barsky, M Block, T Streit, D
Citation: R. Grundbacher et al., Pseudomorphic InPHEMT's with dry-etched source vias having 190 mW output power and 40% PAE at V-band, IEEE ELEC D, 20(10), 1999, pp. 517-519
Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence
Authors: Han, AC Wojtowicz, M Block, TR Zhang, X Chin, TP Cavus, A Oki, A Streit, DC
Citation: Ac. Han et al., Characterization of GaAs/AlGaAs heterojunction bipolar transistor devices using photoreflectance and photoluminescence, J APPL PHYS, 86(11), 1999, pp. 6160-6163
Risultati: 1-7 |