Login
|
New Account
AAAAAA
ITA
ENG
Results:
1-4
|
Results: 4
In situ etching at InGaAs/GaAs quantum well interfaces
Authors:
Chirlias, E Massies, J Marcadet, X Guyaux, JL Grattepain, C
Citation:
E. Chirlias et al., In situ etching at InGaAs/GaAs quantum well interfaces, J CRYST GR, 222(3), 2001, pp. 471-476
Kinetics of AsCl3 chemical beam etching of GaAs(001), (111)A and (111)B surfaces
Authors:
Guyaux, JL Ortion, JM Cordier, Y Kappers, M Chirlias, E Garcia, JC
Citation:
Jl. Guyaux et al., Kinetics of AsCl3 chemical beam etching of GaAs(001), (111)A and (111)B surfaces, J CRYST GR, 202, 1999, pp. 614-618
Epitaxially stacked GaAs GaAlAs lasers using a low-resistance tunnel junction
Authors:
Garcia, JC Rosencher, E Collot, P Laurent, N Guyaux, JL Nagle, J Chirlias, E
Citation:
Jc. Garcia et al., Epitaxially stacked GaAs GaAlAs lasers using a low-resistance tunnel junction, J CRYST GR, 202, 1999, pp. 891-895
An efficient way to improve compositional abruptness at the GaAs on GaInAsinterface
Authors:
Chirlias, E Massies, J Guyaux, JL Moisan, H Garcia, JC
Citation:
E. Chirlias et al., An efficient way to improve compositional abruptness at the GaAs on GaInAsinterface, APPL PHYS L, 74(26), 1999, pp. 3972-3974
Risultati:
1-4
|