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Results: 1-11 |
Results: 11
Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaN
Authors: Chor, EF Zhang, D Gong, H Chen, GL Liew, TYF
Citation: Ef. Chor et al., Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaN, J APPL PHYS, 90(3), 2001, pp. 1242-1249
Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions
Authors: Chong, PF Cho, BJ Chor, EF Joo, MS Yeo, IS
Citation: Pf. Chong et al., Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions, JPN J A P 1, 39(4B), 2000, pp. 2181-2185
Photoresist patterning and ion implantation degradation effects on flash memory device yield
Authors: Cha, CL Ngo, Q Chor, EF See, AK Lee, TJ
Citation: Cl. Cha et al., Photoresist patterning and ion implantation degradation effects on flash memory device yield, EL SOLID ST, 3(7), 2000, pp. 340-342
Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices
Authors: Cha, CL Chor, EF Gong, H Zhang, AQ Chan, L
Citation: Cl. Cha et al., Plasma etching optimization of oxide/nitride/oxide interpoly dielectric breakdown time in flash memory devices, IEEE SEMIC, 13(3), 2000, pp. 386-389
Effects of surface smoothness and deposition temperature of floating gatesin flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown
Authors: Cha, CL Chor, EF Gong, H Chan, L
Citation: Cl. Cha et al., Effects of surface smoothness and deposition temperature of floating gatesin flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown, J MAT SCI L, 19(9), 2000, pp. 817-821
Does short wavelength lithography process degrade the integrity of thin gate oxide?
Authors: Kim, SJ Cho, BJ Chong, PF Chor, EF Ang, CH Ling, CH Joo, MS Yeo, IS
Citation: Sj. Kim et al., Does short wavelength lithography process degrade the integrity of thin gate oxide?, MICROEL REL, 40(8-10), 2000, pp. 1609-1613
Electron-beam irradiation-induced gate oxide degradation
Authors: Cho, BJ Chong, PF Chor, EF Joo, MS Yeo, IS
Citation: Bj. Cho et al., Electron-beam irradiation-induced gate oxide degradation, J APPL PHYS, 88(11), 2000, pp. 6731-6735
Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contacts
Authors: Chor, EF Zhang, D Gong, H Chong, WK Ong, SY
Citation: Ef. Chor et al., Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contacts, J APPL PHYS, 87(5), 2000, pp. 2437-2444
Evaluation of silicon nitride and silicon carbide as efficient polysilicongrain-growth inhibitors
Authors: Cha, CL Chor, EF Jia, YM Bourdillon, AJ Gong, H Pan, JS Zhang, AQ Tang, SK Boothroyd, CB
Citation: Cl. Cha et al., Evaluation of silicon nitride and silicon carbide as efficient polysilicongrain-growth inhibitors, J MAT SCI L, 18(17), 1999, pp. 1427-1431
Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation
Authors: Cha, CL Chor, EF Gong, H Bourdillon, AJ Jia, YM Pan, JS Zhang, AQ Chan, L
Citation: Cl. Cha et al., Surface smoothing of floating gates in flash memory devices via surface nitrogen and carbon incorporation, APPL PHYS L, 75(3), 1999, pp. 355-357
Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoid
Authors: Cha, CL Tee, KC Chor, EF Gong, H Prasad, K Bourdillon, AJ See, A Chan, L Lee, MMO
Citation: Cl. Cha et al., Enhancement of hot-carrier injection resistance for deep submicron transistor gate dielectric with a powered solenoid, APPL PHYS L, 75(26), 1999, pp. 4192-4194
Risultati: 1-11 |