Citation: Sa. Choulis et Tjc. Hosea, Growth characterisation of InxGa1-xAs/GaAs/AlAs vertical-cavity surface-emitting laser structure using photomodulated reflectance, IEE P-OPTO, 148(1), 2001, pp. 49-53
Authors:
Choulis, SA
Weinstein, BA
Hosea, TJC
Kamal-Saadi, M
O'Reilly, EP
Adams, AR
Stolz, W
Citation: Sa. Choulis et al., Effects of confinement on the coupling between nitrogen and band states inInGaAs1-xNx/GaAs (x <= 0.025) structures: Pressure and temperature studies, PHYS ST S-B, 223(1), 2001, pp. 151-156
Citation: Sa. Choulis et al., Resonances between the cavity mode and five excitonic transitions in an InxGa1-xAs/GaAs/AlAs/AlGaAs vertical-cavity surface-emitting laser structure using photomodulated reflectance, J APPL PHYS, 88(10), 2000, pp. 5547-5553