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Results: 1-18 |
Results: 18
Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy
Authors: Lee, CD Ramachandran, V Sagar, A Feenstra, RM Greve, DW Sarney, WL Salamanca-Riba, L Look, DC Bai, S Choyke, WJ Devaty, RP
Citation: Cd. Lee et al., Properties of GaN epitaxial layers grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy, J ELEC MAT, 30(3), 2001, pp. 162-169
Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity - art. no. 075310
Authors: Im, HJ Ding, Y Pelz, JP Choyke, WJ
Citation: Hj. Im et al., Nanometer-scale test of the Tung model of Schottky-barrier height inhomogeneity - art. no. 075310, PHYS REV B, 6407(7), 2001, pp. 5310
Ab initio density-functional supercell calculations of hydrogen defects incubic SiC - art. no. 245202
Authors: Aradi, B Gali, A Deak, P Lowther, JE Son, NT Janzen, E Choyke, WJ
Citation: B. Aradi et al., Ab initio density-functional supercell calculations of hydrogen defects incubic SiC - art. no. 245202, PHYS REV B, 6324(24), 2001, pp. 5202
Multiple bonding structures Of C2H2 chemisorbed on Si(100)
Authors: Mezhenny, S Lyubinetsky, I Choyke, WJ Wolkow, RA Yates, JT
Citation: S. Mezhenny et al., Multiple bonding structures Of C2H2 chemisorbed on Si(100), CHEM P LETT, 344(1-2), 2001, pp. 7-12
Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide
Authors: Aradi, B Deak, P Son, NT Janzen, E Choyke, WJ Devaty, RP
Citation: B. Aradi et al., Impurity-controlled dopant activation: Hydrogen-determined site selection of boron in silicon carbide, APPL PHYS L, 79(17), 2001, pp. 2746-2748
Phosphorus-related deep donor in SiC
Authors: Gali, A Deak, P Briddon, PR Devaty, RP Choyke, WJ
Citation: A. Gali et al., Phosphorus-related deep donor in SiC, PHYS REV B, 61(19), 2000, pp. 12602-12604
STM-assisted nanostructure formation: field-induced excitation and diffusion of precursor molecules
Authors: Lyubinetsky, I Mezhenny, S Choyke, WJ Yates, JT
Citation: I. Lyubinetsky et al., STM-assisted nanostructure formation: field-induced excitation and diffusion of precursor molecules, SURF SCI, 459(1-2), 2000, pp. L451-L456
Overcoordinated hydrogens in the carbon vacancy: Donor centers of SiC
Authors: Gali, A Aradi, B Deak, P Choyke, WJ Son, NT
Citation: A. Gali et al., Overcoordinated hydrogens in the carbon vacancy: Donor centers of SiC, PHYS REV L, 84(21), 2000, pp. 4926-4929
Neutral aluminum and gallium four particle complexes in silicon carbide polytypes
Authors: Devaty, RP Choyke, WJ Sridhara, SG Clemen, LL
Citation: Rp. Devaty et al., Neutral aluminum and gallium four particle complexes in silicon carbide polytypes, MAT SCI E B, 61-2, 1999, pp. 187-196
Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide atseven common laser pumping wavelengths
Authors: Sridhara, SG Eperjesi, TJ Devaty, RP Choyke, WJ
Citation: Sg. Sridhara et al., Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide atseven common laser pumping wavelengths, MAT SCI E B, 61-2, 1999, pp. 229-233
Oxygen in silicon carbide: shallow donors and deep accepters
Authors: Dalibor, T Trageser, H Pensl, G Kimoto, T Matsunami, H Nizhner, D Shigiltchoff, O Choyke, WJ
Citation: T. Dalibor et al., Oxygen in silicon carbide: shallow donors and deep accepters, MAT SCI E B, 61-2, 1999, pp. 454-459
Two mechanisms of scanning tunneling microscopy assisted nanostructure formation using precursor molecules
Authors: Lyubinetsky, I Mezhenny, S Choyke, WJ Yates, JT
Citation: I. Lyubinetsky et al., Two mechanisms of scanning tunneling microscopy assisted nanostructure formation using precursor molecules, J VAC SCI A, 17(4), 1999, pp. 1445-1450
A survey of conduction and valence band edges in SiC
Authors: Choyke, WJ Devaty, RP Sridhara, SG
Citation: Wj. Choyke et al., A survey of conduction and valence band edges in SiC, PHYS SCR, T79, 1999, pp. 9-15
Boron-vacancy complex in SiC
Authors: Gali, A Deak, P Devaty, RP Choyke, WJ
Citation: A. Gali et al., Boron-vacancy complex in SiC, PHYS REV B, 60(15), 1999, pp. 10620-10623
Optically detected electron paramagnetic resonance of AlN single crystals
Authors: Mason, PM Przybylinska, H Watkins, GD Choyke, WJ Slack, GA
Citation: Pm. Mason et al., Optically detected electron paramagnetic resonance of AlN single crystals, PHYS REV B, 59(3), 1999, pp. 1937-1947
Scanning tunneling microscope assisted nanostructure formation: Two excitation mechanisms for precursor molecules
Authors: Lyubinetsky, I Mezhenny, S Choyke, WJ Yates, JT
Citation: I. Lyubinetsky et al., Scanning tunneling microscope assisted nanostructure formation: Two excitation mechanisms for precursor molecules, J APPL PHYS, 86(9), 1999, pp. 4949-4953
Electron stimulated decomposition of adsorbed hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane, Cu(I)(hfac)(vtms)
Authors: Mezhenny, S Lyubinetsky, I Choyke, WJ Yates, JT
Citation: S. Mezhenny et al., Electron stimulated decomposition of adsorbed hexafluoroacetylacetonate Cu(I) vinyltrimethylsilane, Cu(I)(hfac)(vtms), J APPL PHYS, 85(6), 1999, pp. 3368-3373
Multiple bound exciton associated with the nitrogen donor in 3C silicon carbide
Authors: Bergman, JP Janzen, E Choyke, WJ
Citation: Jp. Bergman et al., Multiple bound exciton associated with the nitrogen donor in 3C silicon carbide, PHYS ST S-B, 210(2), 1998, pp. 407-413
Risultati: 1-18 |