Authors: Kim, GH Simmons, MY Liang, CT Ritchie, DA Churchill, AC Sim, HS Chang, KJ Ihm, G Kim, N

Citation: Gh. Kim et al., Method of determining potential barrier heights at submonolayer AlAs/GaAs heterointerfaces - art. no. 165313, PHYS REV B, 6416(16), 2001, pp. 5313

Authors: Griffin, N Dunford, RB Pepper, M Robbins, DJ Churchill, AC Leong, WY

Citation: N. Griffin et al., Inter-edge-mode scattering in a high-mobility strained silicon two-dimensional electron system, J PHYS-COND, 12(8), 2000, pp. 1811-1818

Authors: Dunford, RB Ahmed, A Paul, DJ Pepper, M Churchill, AC Robbins, DJ Pidduck, AJ

Citation: Rb. Dunford et al., Inverted modulation-doped n-type Si/Si0.77Ge0.23 heterostructures, MICROEL ENG, 53(1-4), 2000, pp. 205-208

Authors: Dunford, RB Griffin, N Paul, DJ Pepper, M Robbins, DJ Churchill, AC Leong, WY

Citation: Rb. Dunford et al., Schottky gating high mobility Si/Si1-xGex 2D electron systems, THIN SOL FI, 369(1-2), 2000, pp. 316-319

Authors: Ahmed, A Dunford, RB Paul, DJ Pepper, M Churchill, AC Robbins, DJ Pidduck, AJ

Citation: A. Ahmed et al., Si/SiGe n-type inverted modulation doping using ion implantation, THIN SOL FI, 369(1-2), 2000, pp. 324-327

Authors: Leong, WY Churchill, AC Robbins, DJ Glasper, JL Williams, GM

Citation: Wy. Leong et al., A self-aligned epitaxially grown channel MOSFET device architecture for strained Si/SiGe systems, THIN SOL FI, 369(1-2), 2000, pp. 375-378