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Results: 1-18 |
Results: 18
Simulated and experimental spectroscopic performance of GaAs X-ray pixel detectors
Authors: Bisogni, MG Cola, A Fantacci, ME
Citation: Mg. Bisogni et al., Simulated and experimental spectroscopic performance of GaAs X-ray pixel detectors, NUCL INST A, 466(1), 2001, pp. 188-193
Detection performance of SIGaAs detectors for nuclear medicine
Authors: Bertolucci, E Bisogni, MG Bottigli, U Conti, M Cola, A Fantacci, ME Maestro, P Mettivier, G Quaranta, F Rosso, V Russo, P Stefanini, A Vasanelli, L
Citation: E. Bertolucci et al., Detection performance of SIGaAs detectors for nuclear medicine, NUCL INST A, 460(1), 2001, pp. 123-126
On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors
Authors: Lovergine, N Cola, A Prete, P Tapfer, L Bayhan, M Mancini, AM
Citation: N. Lovergine et al., On hydrogen transport VPE-grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors, NUCL INST A, 458(1-2), 2001, pp. 1-6
Investigation on semi-insulating GaAs detectors using laser-induced current pulses
Authors: Bertolucci, E Conti, M Mettivier, G Quattrocchi, M Russo, P Cola, A Quaranta, F Vasanelli, L Bisogni, MG Bottigli, U Fantacci, ME
Citation: E. Bertolucci et al., Investigation on semi-insulating GaAs detectors using laser-induced current pulses, NUCL INST A, 458(1-2), 2001, pp. 158-163
Simulation of the collection properties of CdTe strip detectors
Authors: Cola, A Quaranta, F Caroli, E Dusi, W Perillo, E
Citation: A. Cola et al., Simulation of the collection properties of CdTe strip detectors, IEEE NUCL S, 48(3), 2001, pp. 292-295
Preparation and characterisation of organic-inorganic heterojunction basedon BDA-PPV/CdS nanocrystals
Authors: Leo, G Curri, ML Cola, A Catalano, M Lomascolo, M Manna, L Quaranta, F Agostiano, A Farinola, GM Babudri, F Naso, F Della Monica, M Vasanelli, L
Citation: G. Leo et al., Preparation and characterisation of organic-inorganic heterojunction basedon BDA-PPV/CdS nanocrystals, MAT SCI E B, 74(1-3), 2000, pp. 175-179
Hall measurements of treated indium tin oxide surfaces
Authors: Kim, JS Cacialli, F Cola, A Gigli, G Gingolani, R
Citation: Js. Kim et al., Hall measurements of treated indium tin oxide surfaces, SYNTH METAL, 111, 2000, pp. 363-367
Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE
Authors: Lovergine, N Bayhan, M Prete, P Cola, A Tapfer, L Mancini, AM
Citation: N. Lovergine et al., Structural and electrical properties of CdTe layers grown on ZnTe/GaAs by hydrogen transport VPE, J CRYST GR, 214, 2000, pp. 229-233
Evidence for charge gain mechanism in SI-GaAs detectors with epitaxial junction
Authors: Bertolucci, E Cola, A Conti, M De Luca, A Mettivier, G Russo, P Quaranta, F Vasanelli, L
Citation: E. Bertolucci et al., Evidence for charge gain mechanism in SI-GaAs detectors with epitaxial junction, IEEE NUCL S, 47(3), 2000, pp. 780-783
Electron cloud effect on current injection across a Schottky contact
Authors: Nabet, B Cola, A Quaranta, F Cesareo, M Rossi, R Fucci, R Anwar, A
Citation: B. Nabet et al., Electron cloud effect on current injection across a Schottky contact, APPL PHYS L, 77(24), 2000, pp. 4007-4009
Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications
Authors: Lovergine, N Prete, P Cola, A Mazzer, M Cannoletta, D Mancini, AM
Citation: N. Lovergine et al., Hydrogen transport vapor phase epitaxy of CdTe on hybrid substrates for x-ray detector applications, J ELEC MAT, 28(6), 1999, pp. 695-699
Monte Carlo simulator of the charge signal induced by external radiation on semi-insulating GaAs detectors
Authors: Cola, A Reggiani, L Vasanelli, L
Citation: A. Cola et al., Monte Carlo simulator of the charge signal induced by external radiation on semi-insulating GaAs detectors, NUCL INST A, 434(1), 1999, pp. 67-70
Radiation damage tests of GaAs HV switches for MSGCs bias control
Authors: Bisogni, MG Bottigli, U Fantacci, ME Stefanini, A Bertolucci, E Conti, M Russo, P Cola, A Quaranta, F Vasanelli, L Stefanini, G
Citation: Mg. Bisogni et al., Radiation damage tests of GaAs HV switches for MSGCs bias control, NUCL INST A, 426(1), 1999, pp. 216-220
Spectroscopic performance of semi-insulating GaAs detectors for digital radiography
Authors: Bertolucci, E Conti, M Mettivier, G Russo, P Cola, A Quaranta, F Vasanelli, L Bisogni, MG Bottigli, U Fantacci, ME Stefanini, A
Citation: E. Bertolucci et al., Spectroscopic performance of semi-insulating GaAs detectors for digital radiography, NUCL INST A, 422(1-3), 1999, pp. 247-251
Transparent ZnO ohmic contact on semi-insulating GaAs
Authors: Palumbo, V Valentini, A Cola, A Quaranta, FM
Citation: V. Palumbo et al., Transparent ZnO ohmic contact on semi-insulating GaAs, SOL ST ELEC, 43(11), 1999, pp. 2021-2024
Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons
Authors: Bertolucci, E Conti, M Mettivier, G Russo, P Bisogni, MG Bottigli, U Fantacci, ME Stefanini, A Cola, A Quaranta, F Vasanelli, L Stefanini, G
Citation: E. Bertolucci et al., Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons, IEEE NUCL S, 46(3), 1999, pp. 121-125
SI-GaAs detectors with epitaxial junction
Authors: Cola, A Quaranta, F Fucci, R Melone, G Rossi, R Passaseo, A Conti, M Mettivier, G Russo, P Bisogni, MG Fantacci, ME
Citation: A. Cola et al., SI-GaAs detectors with epitaxial junction, IEEE NUCL S, 46(3), 1999, pp. 171-175
Increase of charge carriers density and reduction of Hall mobilities in oxygen-plasma treated indium-tin-oxide anodes
Authors: Kim, JS Cacialli, F Cola, A Gigli, G Cingolani, R
Citation: Js. Kim et al., Increase of charge carriers density and reduction of Hall mobilities in oxygen-plasma treated indium-tin-oxide anodes, APPL PHYS L, 75(1), 1999, pp. 19-21
Risultati: 1-18 |