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Results:
1-8
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Results: 8
Authors:
Spruytte, SG
Larson, MC
Wampler, W
Coldren, CW
Petersen, HE
Harris, JS
Citation: Sg. Spruytte et al., Nitrogen incorporation in group III-nitride-arsenide materials grown by elemental source molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 506-515
Authors:
Spruytte, SG
Coldren, CW
Harris, JS
Wampler, W
Krispin, P
Ploog, K
Larson, MC
Citation: Sg. Spruytte et al., Incorporation of nitrogen in nitride-arsenides: Origin of improved luminescence efficiency after anneal, J APPL PHYS, 89(8), 2001, pp. 4401-4406
Authors:
Spruytte, SG
Coldren, CW
Marshall, AF
Larson, MC
Harris, JS
Citation: Sg. Spruytte et al., MBE growth of nitride-arsenide materials for long wavelength opto-electronics, MRS I J N S, 5, 2000, pp. NIL_407-NIL_412
Authors:
Coldren, CW
Spruytte, SG
Harris, JS
Larson, MC
Citation: Cw. Coldren et al., Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy, J VAC SCI B, 18(3), 2000, pp. 1480-1483
Authors:
Larson, MC
Coldren, CW
Spruytte, SG
Petersen, HE
Harris, JS
Citation: Mc. Larson et al., Low-threshold oxide-confined GaInNAs long wavelength vertical cavity lasers, IEEE PHOTON, 12(12), 2000, pp. 1598-1600
Authors:
Coldren, CW
Larson, MC
Spruytte, SG
Harris, JS
Citation: Cw. Coldren et al., 1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions, ELECTR LETT, 36(11), 2000, pp. 951-952
Authors:
Yairi, MB
Coldren, CW
Miller, DAB
Harris, JS
Citation: Mb. Yairi et al., High-speed, optically controlled surface-normal optical switch based on diffusive conduction, APPL PHYS L, 75(5), 1999, pp. 597-599
Authors:
Mao, E
Coldren, CW
Harris, JS
Yankelevich, DR
Solgaard, O
Knoesen, A
Citation: E. Mao et al., GaAs AlGaAs multiple-quantum-well in-line fiber intensity modulator, APPL PHYS L, 75(3), 1999, pp. 310-312
Risultati:
1-8
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