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Results: 1-8 |
Results: 8
Electron-induced dissociation of SiH complexes in hydrogenated Si-doped GaAs. Application to the fabrication of microstructures
Authors: Silvestre, S Constant, E Bernard-Loridant, D Constant, M Chevallier, J
Citation: S. Silvestre et al., Electron-induced dissociation of SiH complexes in hydrogenated Si-doped GaAs. Application to the fabrication of microstructures, SUPERLATT M, 27(5-6), 2000, pp. 431-435
Strong isotope effects in the ultraviolet light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs : Si
Authors: Chevallier, J Barbe, M Constant, M Loridant-Bernard, D Constant, E Silvestre, S
Citation: J. Chevallier et al., Strong isotope effects in the ultraviolet light-induced reactivation of dopants in hydrogenated or deuterated n-GaAs : Si, SUPERLATT M, 27(5-6), 2000, pp. 447-452
Electron-beam-induced reactivation of Si dopants in hydrogenated GaAs: A minority carrier generation effect or an energetic electron excitation effect?
Authors: Silvestre, S Bernard-Loridant, D Constant, E Constant, M Chevallier, J
Citation: S. Silvestre et al., Electron-beam-induced reactivation of Si dopants in hydrogenated GaAs: A minority carrier generation effect or an energetic electron excitation effect?, APPL PHYS L, 77(20), 2000, pp. 3206-3208
Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate
Authors: Boudart, B Gaquiere, C Constant, M Lorriaux, A Lefebvre, N
Citation: B. Boudart et al., Raman characterization of SiNx deposition on undoped Ga0.47In0.53As material grown on InP substrate, J RAMAN SP, 30(8), 1999, pp. 715-719
Isotope effect on the reactivation of neutralized Si dopants in hydrogenated or deuterated GaAs: The role of hot electrons
Authors: Constant, E Bernard-Loridant, D Meziere, S Constant, M Chevallier, J
Citation: E. Constant et al., Isotope effect on the reactivation of neutralized Si dopants in hydrogenated or deuterated GaAs: The role of hot electrons, J APPL PHYS, 85(9), 1999, pp. 6526-6529
Strong isotope effects in the dissociation kinetics of Si-H and Si-D complexes in GaAs under ultraviolet illumination
Authors: Chevallier, J Barbe, M Constant, E Loridant-Bernard, D Constant, M
Citation: J. Chevallier et al., Strong isotope effects in the dissociation kinetics of Si-H and Si-D complexes in GaAs under ultraviolet illumination, APPL PHYS L, 75(1), 1999, pp. 112-114
Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n(+) Ga0.47In0.53As layers for InP high electron mobility transistor applications
Authors: Boudart, B Gaquiere, C Trassaert, S Constant, M Lorriaux, A Lefebvre, N
Citation: B. Boudart et al., Raman characterization of SiNx deposition on undoped Al0.48In0.52As and n(+) Ga0.47In0.53As layers for InP high electron mobility transistor applications, APPL PHYS L, 74(21), 1999, pp. 3221-3223
Infrared study of light-induced reactivation of neutralized dopants in hydrogenated n-type GaAs doped with silicon
Authors: Loridant-Bernard, D Meziere, S Constant, M Dupuy, N Sombret, B Chevallier, J
Citation: D. Loridant-bernard et al., Infrared study of light-induced reactivation of neutralized dopants in hydrogenated n-type GaAs doped with silicon, APPL PHYS L, 73(5), 1999, pp. 644-646
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