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Results: 1-15 |
Results: 15
Characterization of silicon nitride thin films on Si and overlayer growth of Si and Ge
Authors: Wang, XS Li, ZQ Lei, W Hu, YF Zhai, GJ Yang, JS Wang, YQ Fung, KK Tang, JC Wang, X Cue, N
Citation: Xs. Wang et al., Characterization of silicon nitride thin films on Si and overlayer growth of Si and Ge, JPN J A P 1, 40(6B), 2001, pp. 4292-4298
Scanning tunneling microscopy of endohedral metallofullerene Tb@C-82 on C-60 film and Si(100) 2 x 1 surface
Authors: Shi, BR Wang, XS Huang, HJ Yang, SH Heiland, W Cue, N
Citation: Br. Shi et al., Scanning tunneling microscopy of endohedral metallofullerene Tb@C-82 on C-60 film and Si(100) 2 x 1 surface, J PHYS CH B, 105(46), 2001, pp. 11414-11418
Waveguide structure of Er-doped KTiOPO4 films on different substrates by pulsed-laser deposition
Authors: Wang, KM Shi, BR Cue, N Zhu, YY Xiao, RF Lu, F Hu, H Liu, YG
Citation: Km. Wang et al., Waveguide structure of Er-doped KTiOPO4 films on different substrates by pulsed-laser deposition, J VAC SCI A, 19(2), 2001, pp. 394-397
Nitridation of Si(111)
Authors: Wang, XS Zhai, G Yang, J Wang, L Hu, Y Li, Z Tang, JC Wang, X Fung, KK Cue, N
Citation: Xs. Wang et al., Nitridation of Si(111), SURF SCI, 494(2), 2001, pp. 83-94
An atomic structural model of (2 root 3 x 2 root 3)-R30 degrees reconstruction proposed for 3C-SiC(111) crystallized islands on Si(111) by C-60 precursor
Authors: Yang, JS Wang, XS Zhai, GJ Cue, N Wang, X
Citation: Js. Yang et al., An atomic structural model of (2 root 3 x 2 root 3)-R30 degrees reconstruction proposed for 3C-SiC(111) crystallized islands on Si(111) by C-60 precursor, SURF SCI, 476(1-2), 2001, pp. 1-8
Ion implantation of MeV Au+ into potassium titanyl phosphate
Authors: Wang, KM Shi, BR Cue, N Lu, F Meng, MQ Hu, H Shen, DY Liu, YG Fink, D Muller, M
Citation: Km. Wang et al., Ion implantation of MeV Au+ into potassium titanyl phosphate, J PHYS D, 34(11), 2001, pp. 1569-1574
Self-assembled growth of cubic silicon carbide nano-islands on silicon
Authors: Yang, JS Wang, X Zhai, GJ Cue, N Wang, X
Citation: Js. Yang et al., Self-assembled growth of cubic silicon carbide nano-islands on silicon, J CRYST GR, 224(1-2), 2001, pp. 83-88
Upper-limit determination of resonant trielectronic recombination cross-section for krypton using crystal channeling - art. no. 022724
Authors: Chevallier, M Cohen, C Cue, N Dauvergne, D Dural, J Gangnan, P Kirsch, R L'Hoir, A Lelievre, D Libin, JF Mokler, PH Poizat, JC Prinz, HT Ramillon, JM Remillieux, J Roussel-Chomaz, P Rozet, JP Sanuy, F Schmaus, D Stephan, C Toulemonde, M Vernhet, D Warczak, A
Citation: M. Chevallier et al., Upper-limit determination of resonant trielectronic recombination cross-section for krypton using crystal channeling - art. no. 022724, PHYS REV A, 6102(2), 2000, pp. 2724
Three-dimensional range distribution of 400 keV Nd ions implanted into Si
Authors: Shi, BR Cue, N Wang, KM Fink, D Muller, M Heiland, W
Citation: Br. Shi et al., Three-dimensional range distribution of 400 keV Nd ions implanted into Si, RADIAT EFF, 152(4), 2000, pp. 295-305
Experimental determination for (HeH+)-He-4 internuclear separation
Authors: Miao, JW Shi, MG Yang, BF Tang, AY Cue, N
Citation: Jw. Miao et al., Experimental determination for (HeH+)-He-4 internuclear separation, ACT PHY C E, 49(6), 2000, pp. 1058-1063
Splitting behaviour of implanted MeV Au+ ions in LiB3O5
Authors: Wang, KM Shi, BR Cue, N Lu, F Wang, FX Xie, ZX Shen, DY Liu, YG
Citation: Km. Wang et al., Splitting behaviour of implanted MeV Au+ ions in LiB3O5, CHIN PHYS L, 17(1), 2000, pp. 40-42
Surface structures of silicon nitride thin films on Si(111)
Authors: Zhai, GJ Yang, JS Cue, N Wang, XS
Citation: Gj. Zhai et al., Surface structures of silicon nitride thin films on Si(111), THIN SOL FI, 366(1-2), 2000, pp. 121-128
Concentration profile of MeV Ni+ ions in LiNbO3 and KTiOPO4 determined by SIMS
Authors: Wang, KM Hu, H Chen, F Shi, BR Cue, N Wong, PCL Wong, CYC Shen, DY
Citation: Km. Wang et al., Concentration profile of MeV Ni+ ions in LiNbO3 and KTiOPO4 determined by SIMS, SOL ST COMM, 116(10), 2000, pp. 551-555
Range straggling and lateral spread of MeV Au+ ions in LiB3O5 and SiN1.375H0.603
Authors: Wang, KM Shi, BR Cue, N Meng, MQ Lu, F Wang, FX Li, W Shen, DY
Citation: Km. Wang et al., Range straggling and lateral spread of MeV Au+ ions in LiB3O5 and SiN1.375H0.603, J PHYS D, 33(15), 2000, pp. 1764-1767
Charge states and energy loss of 300-MeV/u U73+ ions channeled in a silicon crystal
Authors: Dauvergne, D Scheidenberger, C L'Hoir, A Andersen, JU Andriamonje, S Bockstiegel, C Chevallier, M Cohen, C Cue, N Czajkowski, S Forster, JS Geissel, H Irnich, H Kandler, T Kirsch, R Magel, A Mokler, PH Munzenberg, G Nickel, F Pivovarov, YL Poizat, JC Politis, MF Remillieux, J Schmaus, D Stohlker, T Suzuki, T Toulemonde, M
Citation: D. Dauvergne et al., Charge states and energy loss of 300-MeV/u U73+ ions channeled in a silicon crystal, PHYS REV A, 59(4), 1999, pp. 2813-2826
Risultati: 1-15 |