Authors: DAIO H BUCZKOWSKI A SHIMURA F

Citation: H. Daio et al., INFLUENCE OF CRYSTAL THERMAL HISTORY ON SURFACE RECOMBINATION LIFETIME AT ELEVATED-TEMPERATURES IN MAGNETIC-FIELD-APPLIED CZOCHRALSKI SILICON, JPN J A P 1, 33(4A), 1994, pp. 1970-1971

Authors: DAIO H BUCZKOWSKI A SHIMURA F

Citation: H. Daio et al., LIFETIME STUDY OF METASTABLE SURFACE RECOMBINATION CENTERS IN N-TYPE SILICON-WAFERS, Journal of the Electrochemical Society, 141(6), 1994, pp. 1590-1593

Authors: DAIO H SHIMURA F

Citation: H. Daio et F. Shimura, DEPENDENCE OF MINORITY-CARRIER RECOMBINATION LIFETIME ON SURFACE MICROROUGHNESS IN SILICON-WAFERS, JPN J A P 2, 32(12B), 1993, pp. 120001792-120001794