AAAAAA

   
Results: 1-3 |
Results: 3
SPECIFIC BEHAVIOR OF CHEMICALLY AMPLIFIED SYSTEMS WITH LOW-ACTIVATIONENERGY UNDER ELECTRON-BEAM EXPOSURE - IMPLEMENTATION OF 248 AND 193 NM RESISTS
Authors: MORTINI B TEDESCO S DALZOTTO B PANIEZ P
Citation: B. Mortini et al., SPECIFIC BEHAVIOR OF CHEMICALLY AMPLIFIED SYSTEMS WITH LOW-ACTIVATIONENERGY UNDER ELECTRON-BEAM EXPOSURE - IMPLEMENTATION OF 248 AND 193 NM RESISTS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(6), 1997, pp. 2534-2540
A HEAVY-ION IMPLANTED POCKET 0.10-MU-M N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HYBRID LITHOGRAPHY (ELECTRON-BEAM DEEPULTRAVIOLET) AND SPECIFIC GATE PASSIVATION PROCESS/
Authors: BENISTANT F TEDESCO S GUEGAN G MARTIN F HEITZMANN M DALZOTTO B
Citation: F. Benistant et al., A HEAVY-ION IMPLANTED POCKET 0.10-MU-M N-TYPE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH HYBRID LITHOGRAPHY (ELECTRON-BEAM DEEPULTRAVIOLET) AND SPECIFIC GATE PASSIVATION PROCESS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 4051-4054
A 0.10 MU-M NMOSFET, MADE BY HYBRID LITHOGRAPHY (E-BEAM DUV), WITH INDIUM POCKET AND SPECIFIC GATE REOXIDATION PROCESS/
Authors: BENISTANT F TEDESCO S GUEGAN G MARTIN F HEITZMANN M DALZOTTO B
Citation: F. Benistant et al., A 0.10 MU-M NMOSFET, MADE BY HYBRID LITHOGRAPHY (E-BEAM DUV), WITH INDIUM POCKET AND SPECIFIC GATE REOXIDATION PROCESS/, Microelectronic engineering, 30(1-4), 1996, pp. 459-462
Risultati: 1-3 |