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Results:
1-8
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Results: 8
Authors:
BLUE LJ
DANIELSRACE T
KENDALL RE
SCHMID CR
TEITSWORTH SW
Citation: Lj. Blue et al., DEPENDENCE OF CURRENT-VOLTAGE CHARACTERISTICS ON AL MOLE FRACTION IN GAAS ALXGA1-XAS ASYMMETRIC DOUBLE-BARRIER STRUCTURES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 696-701
Authors:
BALAN V
DANIELSRACE T
MCNEIL LE
Citation: V. Balan et al., PHOTOLUMINESCENCE STUDY OF HIGHLY DOPED, TENSILE-STRAINED GAAS IN0.07AL0.93AS QUANTUM-WELLS/, Microwave and optical technology letters, 16(1), 1997, pp. 7-11
EFFECT OF WELL WIDTH VARIATION ON TYPE-I TYPE-II PHOTOLUMINESCENCE INGAAS/ALAS SINGLE QUANTUM-WELLS/
Authors:
BLUE LJ
DANIELSRACE T
YEH CN
MCNEIL LE
Citation: Lj. Blue et al., EFFECT OF WELL WIDTH VARIATION ON TYPE-I TYPE-II PHOTOLUMINESCENCE INGAAS/ALAS SINGLE QUANTUM-WELLS/, Superlattices and microstructures, 21(2), 1997, pp. 187-193
Authors:
DANIELSRACE T
BANOO K
Citation: T. Danielsrace et K. Banoo, ENGINEERING THE I-V CHARACTERISTICS OF AN ASYMMETRIC DOUBLE-BARRIER DEVICE WITH VARIABLE PERIOD GAAS ALAS SUPERLATTICE INJECTORS/, Thin solid films, 300(1-2), 1997, pp. 202-207
Authors:
BANOO K
DANIELSRACE T
WALLIS CR
TEITSWORTH SW
Citation: K. Banoo et al., PHONON-SCATTERING IN NOVEL SUPERLATTICE-ASYMMETRIC DOUBLE-BARRIER RESONANT-TUNNELING STRUCTURE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2725-2730
Authors:
YEH CN
MCNEIL LE
DANIELSRACE T
BLUE LJ
Citation: Cn. Yeh et al., PHOTOLUMINESCENCE MEASUREMENTS OF TENSILE-STRAINED GAAS IN0.07AL0.93AS QUANTUM-WELLS/, Journal of applied physics, 79(6), 1996, pp. 3192-3195
Authors:
DANIELSRACE T
YU S
Citation: T. Danielsrace et S. Yu, EFFECT OF SPACER LAYER THICKNESS ON TUNNELING CHARACTERISTICS IN ASYMMETRIC ALAS GAAS/ALAS DOUBLE-BARRIER STRUCTURES/, Solid-state electronics, 38(7), 1995, pp. 1347-1349
Authors:
YEH CN
MCNEILL LE
BLUE LJ
DANIELSRACE T
Citation: Cn. Yeh et al., MEASUREMENT OF THE GAAS AIAS VALENCE-BAND OFFSET FROM A SINGLE-QUANTUM-WELL NEAR THE GAMMA-X CROSSOVER/, Journal of applied physics, 77(9), 1995, pp. 4541-4543
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