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Results: 1-13 |
Results: 13
CHARACTERIZATION OF W FILMS ON SI AND SIO2 SI SUBSTRATES BY X-RAY-DIFFRACTION, AFM AND BLISTER TEST ADHESION MEASUREMENTS/
Authors: BOSSEBOEUF A DUPEUX M BOUTRY M BOUROUINA T BOUCHIER D DEBARRE D
Citation: A. Bosseboeuf et al., CHARACTERIZATION OF W FILMS ON SI AND SIO2 SI SUBSTRATES BY X-RAY-DIFFRACTION, AFM AND BLISTER TEST ADHESION MEASUREMENTS/, Microscopy microanalysis microstructures, 8(4-5), 1997, pp. 261-272
PLANARIZATION OF ROUGH SILICON SURFACES BY LASER ANNEALING
Authors: BOSSEBOEUF A BOULMER J DEBARRE D
Citation: A. Bosseboeuf et al., PLANARIZATION OF ROUGH SILICON SURFACES BY LASER ANNEALING, Applied surface science, 110, 1997, pp. 473-476
FABRICATION OF SIGE QUANTUM DOTS ON A SI(100) SURFACE
Authors: THANH VL BOUCHIER D DEBARRE D
Citation: Vl. Thanh et al., FABRICATION OF SIGE QUANTUM DOTS ON A SI(100) SURFACE, Physical review. B, Condensed matter, 56(16), 1997, pp. 10505-10510
DESORPTION AND DIFFUSION AT PULSED-LASER-MELTED SURFACES - THE CASE OF CHLORINE ON SILICON
Authors: DRAGNEA B BOULMER J BUDIN JP DEBARRE D BOURGUIGNON B
Citation: B. Dragnea et al., DESORPTION AND DIFFUSION AT PULSED-LASER-MELTED SURFACES - THE CASE OF CHLORINE ON SILICON, Physical review. B, Condensed matter, 55(20), 1997, pp. 13904-13915
INCORPORATION OF SUBSTITUTIONAL CARBON IN SI AND SIGE BY LASER PROCESSING IN METHANE AND PROPYLENE
Authors: BOULMER J GUEDJ C DEBARRE D
Citation: J. Boulmer et al., INCORPORATION OF SUBSTITUTIONAL CARBON IN SI AND SIGE BY LASER PROCESSING IN METHANE AND PROPYLENE, Thin solid films, 294(1-2), 1997, pp. 137-140
ANNEALING AND ENGRAVING INDUCED BY SILICON LASER - EXPERIENCES AND NUMERICAL SIMULATIONS
Authors: BOURGUIGNON B DRAGNEA B BOULMER J BUDIN JP DEBARRE D
Citation: B. Bourguignon et al., ANNEALING AND ENGRAVING INDUCED BY SILICON LASER - EXPERIENCES AND NUMERICAL SIMULATIONS, Annales de physique, 22, 1997, pp. 229-236
THE ROLE OF GAS-PHASE IN THE LASER ETCHING OF CU BY CCL4
Authors: DEBARRE D ALIOUCHOUCHE A BOULMER J BOURGUIGNON B BUDIN JP
Citation: D. Debarre et al., THE ROLE OF GAS-PHASE IN THE LASER ETCHING OF CU BY CCL4, Applied surface science, 96-8, 1996, pp. 453-456
LASER MODIFICATIONS OF SI(100) - CL SURFACES INDUCED BY SURFACE MELTING - ETCHING AND CLEANING
Authors: BOURGUIGNON B STOICA M DRAGNEA B CARREZ S BOULMER J BUDIN JP DEBARRE D ALIOUCHOUCHE A
Citation: B. Bourguignon et al., LASER MODIFICATIONS OF SI(100) - CL SURFACES INDUCED BY SURFACE MELTING - ETCHING AND CLEANING, Surface science, 338(1-3), 1995, pp. 94-110
REALIZATION OF SI1-X-YGEXCY SI HETEROSTRUCTURES BY PULSED-LASER INDUCED EPITAXY OF C+ IMPLANTED PSEUDOMORPHIC SIGE FILMS AND OF A-SIGEC-H FILMS DEPOSITED ON SI(100)/
Authors: BOULMER J BOUCAUD P GUEDJ C DEBARRE D BOUCHIER D FINKMAN E PRAWER S NUGENT K DESMURLARRE A GODET C CABARROCAS PRI
Citation: J. Boulmer et al., REALIZATION OF SI1-X-YGEXCY SI HETEROSTRUCTURES BY PULSED-LASER INDUCED EPITAXY OF C+ IMPLANTED PSEUDOMORPHIC SIGE FILMS AND OF A-SIGEC-H FILMS DEPOSITED ON SI(100)/, Journal of crystal growth, 157(1-4), 1995, pp. 436-441
LASER ETCHING OF SILICON - DOPANT DESORPTION, DIFFUSION AND SEGREGATION DURING LASER-INDUCED SURFACE MELTING
Authors: DESMUR A OZENNE JB BOURGUIGNON B BOULMER J BUDIN JP DEBARRE D ALIOUCHOUCHE A
Citation: A. Desmur et al., LASER ETCHING OF SILICON - DOPANT DESORPTION, DIFFUSION AND SEGREGATION DURING LASER-INDUCED SURFACE MELTING, Surface and interface analysis, 22(1-12), 1994, pp. 27-30
PULSED-LASER ETCHING OF SILICON - DOPANT PROFILE MODIFICATION AND DOPANT DESORPTION INDUCED BY SURFACE MELTING
Authors: DESMUR A BOURGUIGNON B BOULMER J OZENNE JB BUDIN JP DEBARRE D ALIOUCHOUCHE A
Citation: A. Desmur et al., PULSED-LASER ETCHING OF SILICON - DOPANT PROFILE MODIFICATION AND DOPANT DESORPTION INDUCED BY SURFACE MELTING, Journal of applied physics, 76(5), 1994, pp. 3081-3087
ABLATION AND LASER ETCHING
Authors: DEBARRE D ALIOUCHOUCHE A BOULMER J BOURGUIGNON B BUDIN JP CARREZ S
Citation: D. Debarre et al., ABLATION AND LASER ETCHING, Annales de physique, 19(5), 1994, pp. 245-252
LASER ETCHING OF SILICON BY CHLORINE - EFFECT OF POST-DESORPTION COLLISIONS AND CHLORINE IN-DIFFUSION ON THE LASER DESORPTION YIELD
Authors: ALIOUCHOUCHE A BOULMER J BOURGUIGNON B BUDIN JP DEBARRE D DESMUR A
Citation: A. Aliouchouche et al., LASER ETCHING OF SILICON BY CHLORINE - EFFECT OF POST-DESORPTION COLLISIONS AND CHLORINE IN-DIFFUSION ON THE LASER DESORPTION YIELD, Applied surface science, 69(1-4), 1993, pp. 52-58
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