Authors:
KIRIHATA T
GALL M
HOSOKAWA K
DORTU JM
WONG H
PFEFFERL P
JI BL
WEINFURTNER O
DEBROSSE JK
TERLETZKI H
SELZ M
ELLIS W
WORDEMAN MR
KIEHL O
Citation: T. Kirihata et al., A 220-MM(2), 4-BANK AND 8-BANK, 256-MB SDRAM WITH SINGLE-SIDED STITCHED WL ARCHITECTURE, IEEE journal of solid-state circuits, 33(11), 1998, pp. 1711-1719
Authors:
ADLER E
DEBROSSE JK
GEISSLER SF
HOLMES SJ
JAFFE MD
JOHNSON JB
KOBURGER CW
LASKY JB
LLOYD B
MILES GL
NAKOS JS
NOBLE WP
VOLDMAN SH
ARMACOST M
FERGUSON R
Citation: E. Adler et al., THE EVOLUTION OF IBM CMOS DRAM TECHNOLOGY, IBM journal of research and development, 39(1-2), 1995, pp. 167-188