Authors:
KAYA II
DELLOW MW
BENDING SJ
LINFIELD EH
ROSE PD
RITCHIE DA
JONES GAC
Citation: Ii. Kaya et al., IN-SITU FOCUSED ION-BEAM IMPLANTATION FOR THE FABRICATION OF A HOT-ELECTRON TRANSISTOR OSCILLATOR STRUCTURE, Semiconductor science and technology, 11(1), 1996, pp. 135-138
Authors:
LAM VHY
DELLOW MW
BENDING SJ
ELLIOTT M
ARENT DJ
GUERET P
Citation: Vhy. Lam et al., RESONANT-TUNNELING OF QUASI-BALLISTIC ELECTRONS IN A HOT-ELECTRON TRANSISTOR - EVIDENCE FOR A BREAKDOWN OF MOMENTUM CONSERVATION, Semiconductor science and technology, 10(1), 1995, pp. 110-113
Authors:
BETON PH
DELLOW MW
MAIN PC
EAVES L
HENINI M
Citation: Ph. Beton et al., MAGNETIC-FIELD DEPENDENCE OF THE ELECTRICAL CHARACTERISTICS OF A GATED RESONANT-TUNNELING DIODE, Physical review. B, Condensed matter, 49(3), 1994, pp. 2261-2264
Citation: Mw. Dellow et al., TUNNELING HOT-ELECTRON TRANSISTOR AS A HIGH-POWER SOURCE AT TERAHERTZFREQUENCIES, Applied physics letters, 65(19), 1994, pp. 2463-2465
Authors:
DELLOW MW
BETON PH
MAIN PC
FOSTER TJ
EAVES L
JEZIERSKI AF
KOOL W
HENINI M
BEAUMONT SP
WILKINSON CDW
Citation: Mw. Dellow et al., ASYMMETRY IN THE I(V) CHARACTERISTICS OF A GATED RESONANT TUNNELING DIODE, Semiconductor science and technology, 7(3B), 1992, pp. 442-445