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Results: 1-11 |
Results: 11
PHOTONIC BAND-GAP MATERIALS FOR DEVICES IN THE MICROWAVE DOMAIN
Authors: GADOT F AMMOUCHE A DELUSTRAC A CHELNOKOV A BOUILLAULT F CROZAT P LOURTIOZ JM
Citation: F. Gadot et al., PHOTONIC BAND-GAP MATERIALS FOR DEVICES IN THE MICROWAVE DOMAIN, IEEE transactions on magnetics, 34(5), 1998, pp. 3028-3031
EXPERIMENTAL DEMONSTRATION OF COMPLETE PHOTONIC BAND-GAP IN GRAPHITE STRUCTURE
Authors: GADOT F CHELNOKOV A DELUSTRAC A CROZAT P LOURTIOZ JM CASSAGNE D JOUANIN C
Citation: F. Gadot et al., EXPERIMENTAL DEMONSTRATION OF COMPLETE PHOTONIC BAND-GAP IN GRAPHITE STRUCTURE, Applied physics letters, 71(13), 1997, pp. 1780-1782
ENHANCEMENTS AND DEGRADATIONS IN ULTRASHORT GATE GAAS AND INP HEMTS PROPERTIES AT CRYOGENIC TEMPERATURES - AN OVERVIEW
Authors: ANIEL F SYLVESTRE A JIN Y CROZAT P DELUSTRAC A ADDE R
Citation: F. Aniel et al., ENHANCEMENTS AND DEGRADATIONS IN ULTRASHORT GATE GAAS AND INP HEMTS PROPERTIES AT CRYOGENIC TEMPERATURES - AN OVERVIEW, Journal de physique. IV, 6(C3), 1996, pp. 145-149
SIMULATION OF ELECTRON-STATES IN QUANTUM WIRES WITH MIXED FINITE-ELEMENTS
Authors: LEPAUL S BOUILLAULT F DELUSTRAC A
Citation: S. Lepaul et al., SIMULATION OF ELECTRON-STATES IN QUANTUM WIRES WITH MIXED FINITE-ELEMENTS, Compel, 15(3), 1996, pp. 58
LOW-TEMPERATURE ELECTROLUMINESCENCE SPECTROSCOPY OF HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP
Authors: SYLVESTRE A ANIEL F BOUCAUD P JULIEN FH CROZAT P DELUSTRAC A ADDE R JIN Y PRASEUTH JP
Citation: A. Sylvestre et al., LOW-TEMPERATURE ELECTROLUMINESCENCE SPECTROSCOPY OF HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP, Journal of applied physics, 80(1), 1996, pp. 464-469
SOLVING THE POISSONS AND SCHRODINGERS EQUATIONS TO CALCULATE THE ELECTRON-STATES IN QUANTUM NANOSTRUCTURES USING THE FINITE-ELEMENT METHOD
Authors: LEPAUL S DELUSTRAC A BOUILLAULT F
Citation: S. Lepaul et al., SOLVING THE POISSONS AND SCHRODINGERS EQUATIONS TO CALCULATE THE ELECTRON-STATES IN QUANTUM NANOSTRUCTURES USING THE FINITE-ELEMENT METHOD, IEEE transactions on magnetics, 32(3), 1996, pp. 1018-1021
NONISOTHERMAL QUASI-BIDIMENSIONAL ENERGY-BALANCE MODEL
Authors: LEPAUL S ANIEL F PEYMAYECHE L DELUSTRAC A BOUILLAULT F ADDE R
Citation: S. Lepaul et al., NONISOTHERMAL QUASI-BIDIMENSIONAL ENERGY-BALANCE MODEL, Electronics Letters, 32(7), 1996, pp. 692-694
LOW-TEMPERATURE LOW-VOLTAGE OPERATION OF HEMTS ON INP
Authors: SYLVESTRE A CROZAT P ADDE R DELUSTRAC A JIN Y
Citation: A. Sylvestre et al., LOW-TEMPERATURE LOW-VOLTAGE OPERATION OF HEMTS ON INP, Journal de physique. IV, 4(C6), 1994, pp. 153-158
HIGH-ELECTRIC-FIELD TRANSPORT EFFECTS ON LOW-TEMPERATURE OPERATION OFPSEUDOMORPHIC HEMTS
Authors: ANIEL F CROZAT P DELUSTRAC A ADDE R JIN Y
Citation: F. Aniel et al., HIGH-ELECTRIC-FIELD TRANSPORT EFFECTS ON LOW-TEMPERATURE OPERATION OFPSEUDOMORPHIC HEMTS, Journal de physique. IV, 4(C6), 1994, pp. 171-176
CRYOGENIC INVESTIGATION OF GATE LEAKAGE AND RF PERFORMANCES DOWN TO 50K OF 0.2-MU-M ALLNAS GAINAS/INP HEMTS/
Authors: SYLVESTRE A CROZAT P ADDE R DELUSTRAC A JIN Y HARMAND JC QUILLEC M
Citation: A. Sylvestre et al., CRYOGENIC INVESTIGATION OF GATE LEAKAGE AND RF PERFORMANCES DOWN TO 50K OF 0.2-MU-M ALLNAS GAINAS/INP HEMTS/, Electronics Letters, 29(24), 1993, pp. 2152-2154
GATE LENGTH ELECTRIC PARAMETER DEPENDENCES OF ULTRA-SUBMICROMETER DELTA-DOPED PSEUDOMORPHIC HEMTS
Authors: ANIEL F JINDELORME Y CROZAT P DELUSTRAC A ADDE R VANHOVE M DERAEDT W VANROSSUM M JIN Y LAUNOIS H
Citation: F. Aniel et al., GATE LENGTH ELECTRIC PARAMETER DEPENDENCES OF ULTRA-SUBMICROMETER DELTA-DOPED PSEUDOMORPHIC HEMTS, Electronics Letters, 29(17), 1993, pp. 1570-1571
Risultati: 1-11 |