AAAAAA

   
Results: 1-25 | 26-50 | 51-75 | 76-100 | >>
Results: 1-25/116
SUBSTRATE REACTIVITY AND CONTROLLED CONTAMINATION IN METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF GAN ON SAPPHIRE
Authors: GOLAN Y FINI P DENBAARS SP SPECK JS
Citation: Y. Golan et al., SUBSTRATE REACTIVITY AND CONTROLLED CONTAMINATION IN METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF GAN ON SAPPHIRE, JPN J A P 1, 37(9A), 1998, pp. 4695-4703
THE EFFECT OF GROWTH ENVIRONMENT ON THE MORPHOLOGICAL AND EXTENDED DEFECT EVOLUTION IN GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: FINI P WU X TARSA EJ GOLAN Y SRIKANT V KELLER S DENBAARS SP SPECK JS
Citation: P. Fini et al., THE EFFECT OF GROWTH ENVIRONMENT ON THE MORPHOLOGICAL AND EXTENDED DEFECT EVOLUTION IN GAN GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 37(8), 1998, pp. 4460-4466
SPIRAL GROWTH OF INGAN NANOSCALE ISLANDS ON GAN
Authors: KELLER S MISHRA UK DENBAARS SP SEIFERT W
Citation: S. Keller et al., SPIRAL GROWTH OF INGAN NANOSCALE ISLANDS ON GAN, JPN J A P 2, 37(4B), 1998, pp. 431-434
OPTICAL-PROPERTIES OF GAAS CONFINED IN THE PORES OF MCM-41
Authors: SRDANOV VI ALXNEIT I STUCKY GD REAVES CM DENBAARS SP
Citation: Vi. Srdanov et al., OPTICAL-PROPERTIES OF GAAS CONFINED IN THE PORES OF MCM-41, JOURNAL OF PHYSICAL CHEMISTRY B, 102(18), 1998, pp. 3341-3344
GALLIUM NITRIDE BASED MATERIALS AND THEIR APPLICATION FOR LIGHT-EMITTING DEVICES
Authors: KELLER S DENBAARS SP
Citation: S. Keller et Sp. Denbaars, GALLIUM NITRIDE BASED MATERIALS AND THEIR APPLICATION FOR LIGHT-EMITTING DEVICES, Current opinion in solid state & materials science, 3(1), 1998, pp. 45-50
CLEAVED AND ETCHED FACET NITRIDE LASER-DIODES
Authors: ABARE AC MACK MP HANSEN M SINK RK KOZODOY P KELLER S SPECK JS BOWERS JE MISHRA UK COLDREN LA DENBAARS SP
Citation: Ac. Abare et al., CLEAVED AND ETCHED FACET NITRIDE LASER-DIODES, IEEE journal of selected topics in quantum electronics, 4(3), 1998, pp. 505-509
GAN FIELD EMITTER ARRAY DIODE WITH INTEGRATED ANODE
Authors: UNDERWOOD RD KELLER S MISHRA UK KAPOLNEK D KELLER BP DENBAARS SP
Citation: Rd. Underwood et al., GAN FIELD EMITTER ARRAY DIODE WITH INTEGRATED ANODE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(2), 1998, pp. 822-825
RIDGE-WAVE-GUIDE SAMPLED GRATING DBR LASERS WITH 22-NM QUASI-CONTINUOUS TUNING RANGE
Authors: MASON B FISH GA DENBAARS SP COLDREN LA
Citation: B. Mason et al., RIDGE-WAVE-GUIDE SAMPLED GRATING DBR LASERS WITH 22-NM QUASI-CONTINUOUS TUNING RANGE, IEEE photonics technology letters, 10(9), 1998, pp. 1211-1213
COMPACT, 4 X 4 INGAASP-INP OPTICAL CROSSCONNECT WITH A SCALEABLE ARCHITECTURE
Authors: FISH GA MASON B COLDREN LA DENBAARS SP
Citation: Ga. Fish et al., COMPACT, 4 X 4 INGAASP-INP OPTICAL CROSSCONNECT WITH A SCALEABLE ARCHITECTURE, IEEE photonics technology letters, 10(9), 1998, pp. 1256-1258
TUNABLE SAMPLED-GRATING DBR LASERS WITH INTEGRATED WAVELENGTH MONITORS
Authors: MASON B DENBAARS SP COLDREN LA
Citation: B. Mason et al., TUNABLE SAMPLED-GRATING DBR LASERS WITH INTEGRATED WAVELENGTH MONITORS, IEEE photonics technology letters, 10(8), 1998, pp. 1085-1087
SUPPRESSED MODAL INTERFERENCE SWITCHES WITH INTEGRATED CURVED AMPLIFIERS FOR SCALEABLE PHOTONIC CROSSCONNECTS
Authors: FISH GA COLDREN LA DENBAARS SP
Citation: Ga. Fish et al., SUPPRESSED MODAL INTERFERENCE SWITCHES WITH INTEGRATED CURVED AMPLIFIERS FOR SCALEABLE PHOTONIC CROSSCONNECTS, IEEE photonics technology letters, 10(2), 1998, pp. 230-232
HIGH AL-CONTENT ALGAN GAN MODFETS FOR ULTRAHIGH PERFORMANCE/
Authors: WU YF KELLER BP FINI P KELLER S JENKINS TJ KEHIAS LT DENBAARS SP MISHRA UK
Citation: Yf. Wu et al., HIGH AL-CONTENT ALGAN GAN MODFETS FOR ULTRAHIGH PERFORMANCE/, IEEE electron device letters, 19(2), 1998, pp. 50-53
GROWTH AND PROPERTIES OF INGAN NANOSCALE ISLANDS ON GAN
Authors: KELLER S KELLER BP MINSKY MS BOWERS JE MISHRA UK DENBAARS SP SEIFERT W
Citation: S. Keller et al., GROWTH AND PROPERTIES OF INGAN NANOSCALE ISLANDS ON GAN, Journal of crystal growth, 190, 1998, pp. 29-32
SPATIAL CONTROL OF INGAN LUMINESCENCE BY MOCVD SELECTIVE EPITAXY
Authors: KAPOLNEK D KELLER S UNDERWOOD RD DENBAARS SP MISHRA UK
Citation: D. Kapolnek et al., SPATIAL CONTROL OF INGAN LUMINESCENCE BY MOCVD SELECTIVE EPITAXY, Journal of crystal growth, 190, 1998, pp. 83-86
DISLOCATION GENERATION IN GAN HETEROEPITAXY
Authors: WU XH FINI P TARSA EJ HEYING B KELLER S MISHRA UK DENBAARS SP SPECK JS
Citation: Xh. Wu et al., DISLOCATION GENERATION IN GAN HETEROEPITAXY, Journal of crystal growth, 190, 1998, pp. 231-243
CHARACTERISTICS OF INDIUM-GALLIUM-NITRIDE MULTIPLE-QUANTUM-WELL BLUE LASER-DIODES GROWN BY MOCVD
Authors: MACK MP ABARE AC HANSEN M KOZODOY P KELLER S MISHRA U COLDREN LA DENBAARS SP
Citation: Mp. Mack et al., CHARACTERISTICS OF INDIUM-GALLIUM-NITRIDE MULTIPLE-QUANTUM-WELL BLUE LASER-DIODES GROWN BY MOCVD, Journal of crystal growth, 190, 1998, pp. 837-840
IMPROVED COMPOSITIONAL UNIFORMITY OF INGAASP GROWN BY MOCVD THROUGH MODIFICATION OF THE SUSCEPTOR TEMPERATURE PROFILE
Authors: FISH GA MASON B DENBAARS SP COLDREN LA
Citation: Ga. Fish et al., IMPROVED COMPOSITIONAL UNIFORMITY OF INGAASP GROWN BY MOCVD THROUGH MODIFICATION OF THE SUSCEPTOR TEMPERATURE PROFILE, Journal of crystal growth, 186(1-2), 1998, pp. 1-7
GAN MICROWAVE ELECTRONICS
Authors: MISHRA UK WU YF KELLER BP KELLER S DENBAARS SP
Citation: Uk. Mishra et al., GAN MICROWAVE ELECTRONICS, IEEE transactions on microwave theory and techniques, 46(6), 1998, pp. 756-761
IMPROVEMENT OF GAN-BASED LASER-DIODE FACETS BY FIB POLISHING
Authors: MACK MP VIA GD ABARE AC HANSEN M KOZODOY P KELLER S SPECK JS MISHRA UK COLDREN LA DENBAARS SP
Citation: Mp. Mack et al., IMPROVEMENT OF GAN-BASED LASER-DIODE FACETS BY FIB POLISHING, Electronics Letters, 34(13), 1998, pp. 1315-1316
INFLUENCE OF SI DOPING ON CHARACTERISTICS OF INGAN GAN MULTIPLE-QUANTUM WELLS/
Authors: CHO YH SONG JJ KELLER S MINSKY MS HU E MISHRA UK DENBAARS SP
Citation: Yh. Cho et al., INFLUENCE OF SI DOPING ON CHARACTERISTICS OF INGAN GAN MULTIPLE-QUANTUM WELLS/, Applied physics letters, 73(8), 1998, pp. 1128-1130
ELECTRICAL CHARACTERIZATION OF GAN P-N-JUNCTIONS WITH AND WITHOUT THREADING DISLOCATIONS
Authors: KOZODOY P IBBETSON JP MARCHAND H FINI PT KELLER S SPECK JS DENBAARS SP MISHRA UK
Citation: P. Kozodoy et al., ELECTRICAL CHARACTERIZATION OF GAN P-N-JUNCTIONS WITH AND WITHOUT THREADING DISLOCATIONS, Applied physics letters, 73(7), 1998, pp. 975-977
MICROSTRUCTURE OF GAN LATERALLY OVERGROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION
Authors: MARCHAND H WU XH IBBETSON JP FINI PT KOZODOY P KELLER S SPECK JS DENBAARS SP MISHRA UK
Citation: H. Marchand et al., MICROSTRUCTURE OF GAN LATERALLY OVERGROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 73(6), 1998, pp. 747-749
ENERGY SELECTIVE OPTICALLY PUMPED STIMULATED-EMISSION FROM INGAN GAN MULTIPLE-QUANTUM WELLS/
Authors: SCHMIDT TJ CHO YH GAINER GH SONG JJ KELLER S MISHRA UK DENBAARS SP
Citation: Tj. Schmidt et al., ENERGY SELECTIVE OPTICALLY PUMPED STIMULATED-EMISSION FROM INGAN GAN MULTIPLE-QUANTUM WELLS/, Applied physics letters, 73(5), 1998, pp. 560-562
EFFECTS OF SI-DOPING IN THE BARRIERS OF INGAN MULTIQUANTUM-WELL PURPLISH-BLUE LASER-DIODES
Authors: CHICHIBU S COHEN DA MACK MP ABARE AC KOZODOY P MINSKY M FLEISCHER S KELLER S BOWERS JE MISHRA UK COLDREN LA CLARKE DR DENBAARS SP
Citation: S. Chichibu et al., EFFECTS OF SI-DOPING IN THE BARRIERS OF INGAN MULTIQUANTUM-WELL PURPLISH-BLUE LASER-DIODES, Applied physics letters, 73(4), 1998, pp. 496-498
PIEZOELECTRIC SURFACE-BARRIER LOWERING APPLIED TO INGAN GAN FIELD EMITTER ARRAYS/
Authors: UNDERWOOD RD KOZODOY P KELLER S DENBAARS SP MISHRA UK
Citation: Rd. Underwood et al., PIEZOELECTRIC SURFACE-BARRIER LOWERING APPLIED TO INGAN GAN FIELD EMITTER ARRAYS/, Applied physics letters, 73(3), 1998, pp. 405-407
Risultati: 1-25 | 26-50 | 51-75 | 76-100 | >>