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Results: 25
Authors:
GALLAS B
BERBEZIER I
DERRIEN J
GANDOLFO D
RUIZ J
ZAGREBNOV VA
Citation: B. Gallas et al., KINETIC ROUGHENING OF SI SURFACES AND SURFACTANT EFFECT IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1564-1567
Authors:
BERBEZIER I
GALLAS B
LAPENA L
FERNANDEZ J
DERRIEN J
JOYCE B
Citation: I. Berbezier et al., NEW INSIGHTS ON SIGE GROWTH INSTABILITIES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1582-1588
Authors:
GALLAS B
BERBEZIER I
DERRIEN J
GANDOLFO D
RUIZ J
ZAGREBNOV VA
Citation: B. Gallas et al., DEFECT-MEDIATED KINETIC ROUGHENING IN LOW-TEMPERATURE MBE GROWTH OF SI SI(111)/, Europhysics letters, 41(5), 1998, pp. 519-524
Authors:
BERBEZIER I
GALLAS B
DERRIEN J
Citation: I. Berbezier et al., ELASTIC STRAIN RELAXATION IN SI1-XGEX LAYERS EPITAXIALLY GROWN ON SI SUBSTRATES, Surface review and letters, 5(1), 1998, pp. 133-138
Authors:
BERBEZIER I
GALLAS B
RONDA A
DERRIEN J
Citation: I. Berbezier et al., DEPENDENCE OF SIGE GROWTH INSTABILITY ON SI SUBSTRATE ORIENTATION, Surface science, 413, 1998, pp. 415-429
Authors:
GALLAS B
BERBEZIER I
RONDA A
DERRIEN J
Citation: B. Gallas et al., GROWTH MECHANISMS OF SIGE ON (111)SI AND (100)SI SUBSTRATES, Thin solid films, 294(1-2), 1997, pp. 22-26
Authors:
GALLAS B
BERBEZIER I
DERRIEN J
Citation: B. Gallas et al., HOMOEPITAXY OF SILICON AT LOW-TEMPERATURE ON CLEAN AND GA-COVERED SUBSTRATES, Thin solid films, 294(1-2), 1997, pp. 69-71
Authors:
DERRIEN J
BERBEZIER I
RONDA A
NATOLI JY
Citation: J. Derrien et al., INTERFACE PHASE-TRANSITION AS OBSERVED IN ULTRA-THIN FESI2 EPILAYERS, Applied surface science, 92, 1996, pp. 311-320
Authors:
LAGOMARSINO S
DERRIEN J
KELIRES P
Citation: S. Lagomarsino et al., ISSH - PROCEEDINGS OF THE INTERNATIONAL-SYMPOSIUM ON SI HETEROSTRUCTURES - FROM PHYSICS TO DEVICES - HERAKLION, CRETE, GREECE, SEPTEMBER 11-14, 1995 - PREFACE, Applied surface science, 102, 1996, pp. 7-7
Authors:
MOTTA N
SGARLATA A
DECRESCENZI M
DERRIEN J
Citation: N. Motta et al., STM STUDIES OF GE-SI THIN-LAYERS EPITAXIALLY GROWN ON SI(111), Applied surface science, 102, 1996, pp. 57-61
Authors:
BERBEZIER I
MARTIN JM
BERNARDI C
DERRIEN J
Citation: I. Berbezier et al., EELS INVESTIGATION OF LUMINESCENT NANOPOROUS P-TYPE SILICON, Applied surface science, 102, 1996, pp. 417-422
Authors:
GALLAS B
BERBEZIER I
CHEVRIER J
DERRIEN J
Citation: B. Gallas et al., GALLIUM-MEDIATED HOMOEPITAXIAL GROWTH OF SILICON AT LOW-TEMPERATURES, Physical review. B, Condensed matter, 54(7), 1996, pp. 4919-4925
Authors:
NATOLI JY
BERBEZIER I
RONDA A
DERRIEN J
Citation: Jy. Natoli et al., CHEMICAL BEAM EPITAXY OF IRON DISILICIDE ON SILICON, Journal of crystal growth, 146(1-4), 1995, pp. 444-448
Authors:
MOUCHE L
TARDIF F
DERRIEN J
Citation: L. Mouche et al., MECHANISMS OF METALLIC IMPURITY DEPOSITION ON SILICON SUBSTRATES DIPPED IN CLEANING SOLUTION, Journal of the Electrochemical Society, 142(7), 1995, pp. 2395-2401
Authors:
CHEVRIER J
CRUZ A
PINTO N
BERBEZIER I
DERRIEN J
Citation: J. Chevrier et al., INFLUENCE OF KINETIC ROUGHENING ON THE EPITAXIAL-GROWTH OF SILICON, Journal de physique. I, 4(9), 1994, pp. 1309-1324
Authors:
BERBEZIER I
CHEVRIER J
DERRIEN J
Citation: I. Berbezier et al., HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF ALPHA-FESI2 HETEROEPITAXY ON SI(111), Surface science, 315(1-2), 1994, pp. 27-39
Authors:
MOUCHE L
TARDIF F
DERRIEN J
Citation: L. Mouche et al., PARTICLE DEPOSITION ON SILICON-WAFERS DURING WET CLEANING PROCESSES, Journal of the Electrochemical Society, 141(6), 1994, pp. 1684-1691
Authors:
NATOLI JY
BERBEZIER I
DERRIEN J
Citation: Jy. Natoli et al., GROWTH OF BETA-FESI2 ON SI(111) BY CHEMICAL BEAM EPITAXY, Applied physics letters, 65(11), 1994, pp. 1439-1441
Authors:
VINH LT
EDDRIEF M
SEBENNE CA
DUMAS P
TALEBIBRAHIMI A
GUNTHER R
CHABAL YJ
DERRIEN J
Citation: Lt. Vinh et al., LOW-TEMPERATURE FORMATION OF SI(111)7X7 SURFACES FROM CHEMICALLY PREPARED H SI(111)-(1 X-1) SURFACES/, Applied physics letters, 64(24), 1994, pp. 3308-3310
Authors:
CHEVRIER J
VINH T
DERRIEN J
Citation: J. Chevrier et al., STRAINED AND RELAXED SEMICONDUCTING SILICIDE LAYERS HETEROEPITAXIALLYGROWN ON SILICON, Scanning microscopy, 7(2), 1993, pp. 473-480
Authors:
CHEVRIER J
STOCKER P
VINH L
GAY JM
DERRIEN J
Citation: J. Chevrier et al., EPITAXIAL-GROWTH OF ALPHA-FESI2 ON SI(111) AT LOW-TEMPERATURE, Europhysics letters, 22(6), 1993, pp. 449-454
Authors:
DERRIEN J
CHEVRIER J
VINH LT
BERBEZIER I
GIANNINI C
LAGOMARSINO S
GRIMALDI MG
Citation: J. Derrien et al., SYNTHESIS AND PROPERTIES OF EPITAXIAL SEMICONDUCTING SILICIDES, Applied surface science, 73, 1993, pp. 90-101
Authors:
DERRIEN J
CHEVRIER J
LETHANH V
CRUMBAKER TE
NATOLI JY
BERBEZIER I
Citation: J. Derrien et al., SILICIDE EPILAYERS - RECENT DEVELOPMENTS AND PROSPECTS FOR A SI-COMPATIBLE TECHNOLOGY, Applied surface science, 70-1, 1993, pp. 546-558
Authors:
CRUMBAKER TE
NATOLI JY
BERBEZIER I
DERRIEN J
Citation: Te. Crumbaker et al., GROWTH OF BETA-FESI2 ON SILICON SUBSTRATES BY CHEMICAL BEAM EPITAXY, Journal of crystal growth, 127(1-4), 1993, pp. 158-164
Authors:
MAHAN JE
LETHANH V
CHEVRIER J
BERBEZIER I
DERRIEN J
LONG RG
Citation: Je. Mahan et al., SURFACE ELECTRON-DIFFRACTION PATTERNS OF BETA-FESI2 FILMS EPITAXIALLYGROWN ON SILICON, Journal of applied physics, 74(3), 1993, pp. 1747-1761
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